PHILIPS BF583

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF583; BF585; BF587
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
1
PINNING
PIN
DESCRIPTION
1
2
3
MBH793
1
emitter
2
collector
3
base
Fig.1
Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BF583
−
300
V
BF585
−
350
V
−
400
V
BF583
−
250
V
BF585
−
300
V
BF587
−
350
V
−
100
mA
−
1.6
W
BF587
VCEO
MIN.
collector-emitter voltage
open base
ICM
peak collector current
Ptot
total power dissipation
in free air; Tamb ≤ 25 °C
hFE
DC current gain
IC = 25 mA; VCE = 20 V
−
50
Cre
feedback capacitance
IC = ic = 0; VCE = 30 V; f = 1 MHz
−
1.8
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V
70
110
MHz
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
collector-base voltage
MAX.
UNIT
open emitter
BF583
−
300
V
BF585
−
350
V
−
400
V
BF583
−
250
V
BF585
−
300
V
−
350
V
−
5
V
mA
BF587
VCEO
MIN.
collector-emitter voltage
open base
BF587
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
50
−
ICM
peak collector current
−
100
mA
IBM
peak base current
−
50
mA
Ptot
total power dissipation
in free air; Tamb ≤ 25 °C
−
1.6
W
in free air; Tmb ≤ 25 °C
−
5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
78
K/W
Rth j-mb
thermal resistance from junction to mounting base
25
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 300 V
−
20
nA
IE = 0; VCB = 250 V; Tj = 150 °C
−
20
µA
IC = 0; VEB = 5 V
−
100
nA
DC current gain
IC = 25 mA; VCE = 20 V
50
−
IC = 40 mA; VCE = 20 V
20
−
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5 mA
−
600
mV
Cc
collector capacitance
IE = ie = 0; VCB = 30 V; f = 1 MHz
−
2.5
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 30 V; f = 1 MHz
−
1.8
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V
70
110
MHz
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
PACKAGE OUTLINE
10.4 max
handbook, full pagewidth
0.56 max
3.8
3.6
3.8
24.2
max
8.6
max
2.5 max (1)
2.4 max
12.2
min
1
2
3
0.8 (3x)
0.6
2.54
0.65 max
2.54
1.6
4.6
max
10
MGA322
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-202.
1996 Dec 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
NOTES
1996 Dec 09
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
NOTES
1996 Dec 09
7
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© Philips Electronics N.V. 1996
SCA52
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Printed in The Netherlands
117041/00/02/pp8
Date of release: 1996 Dec 09
Document order number:
9397 750 01571