MOTOROLA MBRS140T3

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by MBRS140T3/D
SEMICONDUCTOR TECHNICAL DATA
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical to the
system.
•
•
•
•
•
•
Motorola Preferred Device
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
40 VOLTS
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: B140
CASE 403A–03
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
Volts
IF(AV)
1.0
Amps
IFSM
40
Amps
TJ
– 65 to +125
°C
RθJL
12
°C/W
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25°C)
VF
0.6
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 115°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead
(TL = 25°C)
ELECTRICAL CHARACTERISTICS
mA
1.0
10
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
Device
Rectifier
Motorola, Inc.
1996 Data
1
1
0.7
0.5
TC = 100°C
I R , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRS140T3
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.1
TC = 25°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
TJ = 125°C
100°C
75°C
25°C
0
4
8
12
16
20
24
28
32
36
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
40
200
180
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
C, CAPACITANCE (pF)
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
10
RATED VOLTAGE APPLIED
RθJC = 12°C/W
TJ = 125°C
9
8
7
6
5
4
DC
3
SQUARE WAVE
2
1
0
30
40
50
60
70
80
90 100
TC, CASE TEMPERATURE (°C)
110
Figure 4. Current Derating (Case)
2
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Capacitance
120
130
5
DC
SQUARE
WAVE
TJ = 125°C
4
π
5
3
CAPACITANCE
LOAD
2
10
IPK
= 20
IAV
1
0
0
1
2
3
4
5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Power Dissipation
Rectifier Device Data
MBRS140T3
PACKAGE DIMENSIONS
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
C
K
P
J
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
CASE 403A–03
ISSUE B
Rectifier Device Data
3
MBRS140T3
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Rectifier
Device Data
MBRS140T3/D