IRF HFA30PB120PBF

PD -95686A
HFA30PB120PbF
Ultrafast, Soft Recovery Diode
HEXFRED
TM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Guaranteed Avalanche
• Specified at Operating Conditions
• Lead-Free
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and
Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 30A
Qrr (typ.)= 120nC
IRRM(typ.) = 4.7A
trr(typ.) = 47ns
di(rec)M/dt (typ.)* = 240A/µs
TO-247AC (Modified)
International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing
the latest in epitaxial construction and advanced processing techniques it features a superb combination
of characteristics which result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well
suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time,
the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and
the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
VR
Cathode-to-Anode Voltage
IF @ TC = 100°C Continuous Forward Current
IFSM
Single Pulse Forward Current
IFRM
Maximum Repetitive Forward Current
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
* 125°C
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Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
1200
V
30
120
A
90
350
140
-55 to + 150
W
°C
1
11/2/04
HFA30PB120PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
VBR
Parameter
Cathode Anode Breakdown Voltage
Min.
Typ.
Max.
Units
1200
–––
–––
V
–––
2.4
4.1
3.1
5.7
Conditions
IR = 100µA
IF = 30A
VFM
Max Forward Voltage
–––
–––
2.3
4.0
IRM
Max Reverse Leakage Current
–––
1.3
40
–––
1.1
4000
V
IF = 60A
See Fig. 1
µA
VR = VR Rated
IF = 30A, TJ = 125°C
See Fig. 2
TJ = 125°C, VR = 0.8 x VR Rated
CT
Junction Capacitance
–––
50
75
pF
VR = 200V
LS
Series Inductance
–––
8.0
–––
nH
Measured lead to lead 5mm from
See Fig. 3
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
trr
Symbol
Reverse Recovery Time
Parameter
–––
47
–––
trr1
See Fig. 5, 10
–––
110
170
–––
170
260
Peak Recovery Current
–––
10
15
IRRM2
See Fig. 6
–––
16
24
Qrr1
Reverse Recovery Charge
–––
650
980
Qrr2
See Fig. 7
–––
1540
2310
ns
TJ = 25°C
A
TJ = 25°C
nC
TJ = 25°C
TJ = 125°C
IF = 30A
TJ = 125°C
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
–––
270
–––
di(rec)M/dt1 During tb
–––
240
–––
See Fig. 8
Conditions
IF=1.0A, diF/dt=200A/µs, VR = 30V
IRRM1
trr2
Units
VR = 200V
TJ = 125°C
A/µs TJ = 25°C
diF/dt =200A/µs
TJ = 125°C
Thermal - Mechanical Characteristics
d
Parameter
Min.
Typ.
Max.
Units
°C
Lead Temperature
–––
–––
300
RqJC
Thermal Resistance, Junction-to-Case
–––
–––
0.36
RqJA
Thermal Resistance, Junction-to-Ambient
–––
–––
80
°C/W
Rqcs
Thermal Resistance, Case-to-Heat Sink
–––
0.50
Weight
–––
2.0 (0.07)
–––
g (oz.)
Mounting Torque
6.0
–––
12
kg-cm
5.0
–––
10
lbf in
Tlead
e
f
Wt
x
Notes:
 L=100µH, duty cycle limited by max T J
‚ 0.063 in. from Case (1.6mm) for 10 sec
ƒ Typical Socket Mount
„ Mounting Surface, Flat, Smooth and Greased
2
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HFA30PB120PbF
10
Reverse Current - I R (µA)
IF, Instantaneous Forward Current (A)
1000
100
T J = 150°C
T J = 125°C
1
T J = 25°C
0.1
200
400
600
800
1000
1200
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - CT (pF)
10
25°C
125°C
150°C
1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VF, Forward Voltage Drop (V)
100
TJ = 25°C
10
1
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
10
100
1000
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
τJ
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
τC
τ
τ3
Ri (°C/W) τi (sec)
0.234
0.000100
0.069
0.000434
0.056
Ci= τi/Ri
Ci i/Ri
0.002202
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
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Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
3
HFA30PB120PbF
35
300
VR = 390V
T J = 25°C _____
275
IF = 60A
IF = 30A
T J = 125°C ----------
250
V = 390V
R
T = 25°C _____
J
T = 125°C ---------J
30
IF = 15A
225
IF = 60A
IF = 30A
IF = 15A
25
200
trr (ns)
IRRM (A)
175
150
125
20
15
100
10
75
50
5
25
0
0
100 150 200 250 300 350 400 450 500
100 150 200 250 300 350 400 450 500
diF /dt (A/µs)
diF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dif/dt,
(per Leg)
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(per Leg)
3000
900
VR = 390V
T J = 25°C _____
2500
T J = 125°C ----------
IF
= 60A
800
IF = 30A
IF = 15A
700
di(rec)M / dt (A/µs)
2000
Qrr (nC)
V = 390V
R
T = 25°C _____
J
TJ = 125°C ----------
1500
1000
600
IF15A
500
400
IF
300
200
IF
= 30A
= 60A
500
100
0
0
100
200
300
400
500
diF /dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt,
(per Leg)
4
100 150 200 250 300 350 400 450 500
diF /dt (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(per Leg)
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HFA30PB120PbF
3
t rr
IF
0
REVERSE RECOVERY CIRCUIT
tb
ta
VR = 200V
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T.
dif/dt
ADJUST
IRFP250
4. Qrr - Area under curve defined by trr
and I RRM
trr X IRRM
Q rr =
2
2. I RRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
5. di(rec)M/dt - Peak rate of change of
current during t b portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
I L(PK)
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
CURRENT
MONITOR
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
D
G
5
FREE-WHEEL
DIODE
+
DECAY
TIME
Vd = 50V
V (AVAL)
V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
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5
HFA30PB120PbF
TO-247AC (Modified) Package Outline Drawing
Dimensions are in millimeters (inches)
Note: Marking "P" indicates Lead-Free
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
6
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