PHILIPS BAP63-05

DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D088
BAP63-05
Silicon PIN diode
Objective specification
2000 Feb 17
Philips Semiconductors
Objective specification
Silicon PIN diode
BAP63-05
PINNING
FEATURES
• High speed switching for RF signals
PIN
DESCRIPTION
• Low diode capacitance
1
anode (a1)
• Low diode forward resistance
2
anode (a2)
• Low series inductance
3
common cathode
• For applications up to 3 GHz.
APPLICATIONS
• RF attenuators and switches.
book, 4 columns
2
1
DESCRIPTION
2
Two planar PIN diodes in common cathode configuration
in a SOT23 small plastic SMD package.
1
3
3
MAM108
Top view
Marking code:
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
50
V
−
100
mA
−
250
mW
storage temperature
−65
+150
°C
junction temperature
−65
+150
°C
VR
continuous reverse voltage
IF
continuous forward current
Ptot
total power dissipation
Tstg
Tj
2000 Feb 17
Ts = 90 °C
2
Philips Semiconductors
Objective specification
Silicon PIN diode
BAP63-05
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
IF = 100 mA
0.95
1.2
V
VR = 35 V
−
10
µA
VR = 0; f = 100 MHz
0.3
−
pF
VR = 5 V; f = 1 MHz
0.21
0.3
pF
2
Ω
rD
diode forward resistance
IF = 5 mA; f = 100 MHz; note 1
1.2
IF = 10 mA; f = 100 MHz; note 1
1
−
Ω
τL
charge carrier life time
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
75
−
ns
LS
series inductance
1.4
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2000 Feb 17
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
220
K/W
Philips Semiconductors
Objective specification
Silicon PIN diode
BAP63-05
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2000 Feb 17
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
4
Philips Semiconductors
Objective specification
Silicon PIN diode
BAP63-05
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 17
5
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SCA 69
© Philips Electronics N.V. 2000
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Printed in The Netherlands
125004/04/pp6
Date of release: 2000
Feb 17
Document order number:
9397 750 nnnnn