PHILIPS BAT140_03

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series
Schottky barrier double diodes
Product specification
Supersedes data of 1997 Oct 03
2003 Aug 04
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
FEATURES
PINNING
• Low switching losses
BAT140
PIN
• Capability of absorbing very high surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
A
C
S
1
k1
a1
a1
2
n.c.
n.c.
n.c.
3
k2
a2
k2
4
a1, a2
k1, k2
k1, a2
APPLICATIONS
• Low power switched-mode power supplies
• Rectification
4
handbook, halfpage
• Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes encapsulated in a
SOT223 plastic SMD package.
MARKING
1
TYPE NUMBER
MARKING CODE
BAT140A
AT140A
BAT140C
AT140C
BAT140S
AT140S
Fig.1
4
3
MGL171
Simplified outline (SOT223) and pin
configuration.
a. BAT140A.
4
1
3
2 n.c.
MGL172
b. BAT140C.
Fig.2 BAT140 diode configurations and symbols.
2003 Aug 04
2
3
MSB002 - 1
4
1
2 n.c.
2
Top view
1
3
2 n.c.
c. BAT140S.
MGL173
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
VR
continuous reverse voltage
40
V
IF
continuous forward current
−
1
A
IF(AV)
average forward current
Tamb = 65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
−
1
A
IFSM
non-repetitive peak forward current
t = 8.3 µs half sinewave;
JEDEC method
−
10
A
IRSM
non-repetitive peak reverse current
tp = 100 µs
−
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 100 mA; note 1
IF = 1 A; note 1
IR
Cd
reverse current
diode capacitance
280
330
mV
460
500
mV
VR = 10 V; note 1; see Fig.4
15
40
µA
VR = 40 V; note 1; see Fig.4
60
300
µA
VR = 4 V; f = 1 MHz; see Fig.5
65
80
pF
Note
1. Pulsed test: tp = 300 ms; d = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT223 standard mounting conditions.
2003 Aug 04
3
VALUE
UNIT
100
K/W
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
GRAPHICAL DATA
MBL887
4
handbook,
10halfpage
MLC389
4
10halfpage
handbook,
(1)
IR
(µA)
IF
(mA)
(2)
10 3
103
(3)
(1)
(2)
102
10 2
(3)
(4)
(4)
10
10
1
1
0
200
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Fig.3
400
600
0
800
1000
VF (mV)
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Forward current as a function of forward
voltage; typical values.
Fig.4
MLC390
10 3
handbook, halfpage
Cd
(pF)
10 2
10
8
0
16
24
32 V (V) 40
R
f = 1 MHz.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 04
10
4
20
30
V R (V) 40
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
2003 Aug 04
REFERENCES
IEC
JEDEC
EIAJ
SC-73
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Aug 04
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA75
© Koninklijke Philips Electronics N.V. 2003
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Printed in The Netherlands
613514/02/pp7
Date of release: 2003
Aug 04
Document order number:
9397 750 11053