PMWD22XN Dual N-channel µTrenchMOS extremely low level FET Rev. 01 — 15 August 2005 Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features ■ Low threshold voltage ■ Fast switching ■ Common drain 1.3 Applications ■ Portable appliances ■ Battery management 1.4 Quick reference data ■ VDS ≤ 20 V ■ RDSon ≤ 26 mΩ ■ ID ≤ 9.2 A ■ QGD = 2.7 nC (typ) 2. Pinning information Table 1: Pinning Pin Description 1, 8 drain (D) 2, 3 source1 (S1) 4 gate1 (G1) 5 gate2 (G2) 6, 7 source2 (S2) Simplified outline 8 Symbol 5 D D G1 S1 G2 S2 mbl600 1 4 SOT530-1 (TSSOP8) PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 3. Ordering information Table 2: Ordering information Type number PMWD22XN Package Name Description Version TSSOP8 plastic thin shrink small outline package; 8 leads; body width 4.4 mm SOT530-1 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage - ±12 V Tsp = 25 °C; VGS = 4.5 V; see Figure 2 and 3 [1] - 9.2 A Tsp = 100 °C; VGS = 4.5 V; see Figure 2 [1] - 5.8 A peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 [1] - 37 A Ptot total power dissipation Tsp = 25 °C; see Figure 1 [1] - 3.5 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C drain current ID IDM Source-drain diode IS ISM [1] source current Tsp = 25 °C [1] - 2.9 A peak source current Tsp = 25 °C; pulsed; tp ≤ 10 µs [1] - 11.9 A Single device conducting. 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 2 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 Tsp (°C) 200 0 P tot P der = ------------------------ × 100 % P ° 50 100 Tsp (°C) 200 ID I der = --------------------- × 100 % I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 003aaa786 102 tp = 10 µ s Limit RDSon = VDS / ID ID (A) 150 100 µ s 10 1 ms 10 ms 1 DC 100 ms 10-1 10-2 10-1 1 10 VDS (V) 102 Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 3 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) Conditions Min Typ Max Unit see Figure 4 - - 35 K/W 003aaa787 102 Zth(j-sp) (K/W) δ = 0.5 10 0.2 0.1 0.05 1 δ= P 0.02 single pulse tp T t tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) 102 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 4 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V Tj = 25 °C 0.5 1 1.5 V Tj = 150 °C 0.35 - - V Tj = −55 °C - - 1.8 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage gate-source threshold voltage drain leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; see Figure 9 and 10 VDS = 20 V; VGS = 0 V IGSS gate leakage current VGS = ±12 V; VDS = 0 V - - 100 nA RG gate resistance f = 1 MHz - 1.3 - Ω RDSon drain-source on-state resistance VGS = 4.5 V; ID = 4 A; see Figure 6 and 8 - 21 26 mΩ Tj = 25 °C Tj = 150 °C RS1S2on source1-source2 on-state resistance - 35.7 42 mΩ VGS = 2.5 V; ID = 3 A; see Figure 6 and 8 - 27 35 mΩ VGS = 10 V; ID = 4.2 A; see Figure 8 - 19 24 mΩ VGS = 4.5 V; ID = 4 A - 36 - mΩ ID = 4 A; VDS = 10 V; VGS = 4.5 V; see Figure 11 - 8.4 - nC - 1.35 - nC - 2.7 - nC VGS = 0 V; VDS = 16 V; f = 1 MHz; see Figure 13 - 535 - pF - 185 - pF - 110 - pF Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω - 11 - ns - 19 - ns turn-off delay time - 30 - ns fall time - 23 - ns - 0.75 1.2 V Source-drain diode VSD source-drain voltage IS = 2 A; VGS = 0 V; see Figure 12 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 5 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 003aaa788 25 ID (A) 4.5 VGS (V) = 2.5 20 003aaa789 120 RDSon VGS (V) = (mΩ) 100 1.7 2.1 80 1.9 15 1.9 60 2.1 10 1.7 40 2.5 5 1.5 4.5 20 0 0 0 0.2 0.4 0.6 0.8 VDS (V) 1 0 Tj = 25 °C 5 10 15 20 ID (A) 25 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 003aaa790 25 ID (A) 03af18 2 a 20 1.5 15 1 10 Tj = 150 °C 5 25 °C 0.5 0 0 0.5 1 1.5 2 VGS (V) 2.5 Tj = 25 °C and 150 °C; VDS > ID × RDSon 0 -60 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25 °C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 9397 750 15093 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 6 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 03al82 2 03al83 10-3 VGS(th) ID (A) (V) 1.5 max 1 min typ max 0.5 1 1.5 10-4 typ 10-5 min 0.5 0 -60 10-6 0 60 120 180 0 Tj (°C) VGS (V) 2 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aaa791 5 VGS (V) 4 3 2 1 0 0 2 4 6 8 10 QG (nC) ID = 4 A; VDS = 10 V Fig 11. Gate-source voltage as a function of gate charge; typical values 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 7 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 003aaa792 25 003aaa793 104 IS (A) C (pF) 20 15 103 10 Ciss 5 150 °C Tj = 25 °C Coss 0 0 0.4 0.8 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V 102 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Source current as a function of source-drain voltage; typical values Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 9397 750 15093 Product data sheet Crss 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 8 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 7. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 4.4 mm SOT530-1 E A D X c y HE v M A Z 8 5 A2 A (A3) A1 pin 1 index θ Lp L detail X 1 4 e w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(2) e HE L Lp v w y Z(1) θ mm 1.1 0.15 0.05 0.95 0.85 0.25 0.30 0.19 0.20 0.13 3.1 2.9 4.5 4.3 0.65 6.5 6.3 0.94 0.7 0.5 0.1 0.1 0.1 0.70 0.35 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT530-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 00-02-24 03-02-18 MO-153 Fig 14. Package outline SOT530-1 (TSSOP8) 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 9 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PMWD22XN_1 20050815 Product data sheet - - 9397 750 15093 Product data sheet 9397 750 15093 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 10 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 15093 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 15 August 2005 11 of 12 PMWD22XN Philips Semiconductors Dual N-channel µTrenchMOS extremely low level FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 15 August 2005 Document number: 9397 750 15093 Published in The Netherlands