Component EEPROV3.0 Datasheet.pdf

®
PSoC Creator™ Component Datasheet
EEPROM
3.0
Features
 512 B to 2 KB EEPROM memory
 1,000,000 cycles, 20-year retention
 Read/Write 1 byte at a time
 Program 16 bytes (a row) at a time
General Description
The EEPROM component provides a set of APIs to erase and write data to non-volatile on-chip
EEPROM memory. The term write implies that it will erase and then program in one operation.
An EEPROM memory in PSoC devices is organized in arrays. PSoC 3 and PSoC 5LP devices
offer an EEPROM array of size 512 bytes, 1 KB or 2 KB depending on the device. EEPROM
array can be divided into sectors that have up to 64 rows with a size of 16 bytes. The Application
Programming Interface (API) routines allow you to modify a whole EEPROM row, individual
EEPROM bytes, or erase a whole EEPROM sector in one operation.
The EEPROM memory is not initialized by the EEPROM component: the initial state of the
memory is defined in the device datasheet. The default values can be changed in the PSoC
Creator EEPROM Editor. For more details, refer to the PSoC Creator Help.
The EEPROM component is tightly coupled with various system elements contained within the
cy_boot component. These elements are generated upon a successful build. Refer to the
System Reference Guide for more information about the cy_boot component and its various
elements.
When to use an EEPROM
An EEPROM component can be used for the below purposes:



Non-volatile storage that must survive power cycles (for example, calibration tables or
device configuration)
For additional storage of data (freeing up on-chip RAM)
For read-only (or rarely-changing) program data
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-96734 Rev. **
Revised March 21, 2015
EEPROM
®
PSoC Creator™ Component Datasheet
Input/Output Connections
There are no I/O connections for the EEPROM component. It is an API only.
Component Parameters
The EEPROM has no configurable parameters other than standard Instance Name and Built-in
parameters.
Application Programming Interface
Application Programming Interface (API) routines allow you to configure the component using
software. The following table lists and describes the interface to each function. The subsequent
sections cover each function in more detail.
The entire contents of the EEPROM are mapped into memory space and can be read directly.
EEPROM allows read access at the byte level. However, the component provides a separate
API for reading data from EEPROM memory: EEPROM_ReadByte(). This API along with
EEPROM_WriteByte() provide a simple interface to read and write individual EEPROM bytes.
Erasing the EEPROM can be done either by sector number, or by writing some data to individual
cells. The time that is takes to write an individual byte is equal to time of writing a whole
EEPROM row.
The following defines are used for reading EEPROM:



CYDEV_EE_BASE – The base address of the EEPROM memory in absolute address
space
CYDEV_EE_SIZE – The size of the EEPROM memory space in bytes
CYDEV_EEPROM_ROW_SIZE – The size of a row of the EEPROM in bytes
Using the base pointer, individual bytes of the EEPROM memory can be read. To navigate to a
specific row the base pointer must be incremented by the number of times of the size of the
EEPROM row.
To read the data from EEPROM in PSoC 3 using direct addressing, the pointer to the EEPROM
variable should be typecasted to (CYXDATA *) because the EEPROM memory is in an extended
memory region of the 8051. For example, when a floating point integer is stored in EEPROM, the
following should be used:
(volatile float CYXDATA *)CYDEV_EE_BASE
The SIZEOF_EEPROM_ROW define can be used instead of CYDEV_EEPROM_ROW_SIZE.
EEPROM_1_EEPROM_SIZE is also defined as the size of the EEPROM memory space in bytes
(where EEPROM_1 is the instance name of the EEPROM component).
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Document Number: 001-96734 Rev. **
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PSoC Creator™ Component Datasheet
EEPROM
It is necessary to acquire the die temperature by calling the EEPROM_UpdateTemperature()
function before a series of EEPROM write operations. The EEPROM_UpdateTemperature()
function queries SPC for the die temperature and stores it in a global variable, which is used
while performing EEPROM write operations. If the application is used in an environment where
the die temperature changes 10° C or more, the temperature should be refreshed to adjust the
write times for the optimal performance.
It can take as many as 20 ms to write to EEPROM. During this time, the device should not be
reset, or unexpected changes may be made to portions of EEPROM or Flash. Reset sources
include XRES pin, software reset, and watchdog. Make sure that these are not inadvertently
activated. Also, the low voltage detect circuits should be configured to generate an interrupt
instead of a reset.
By default, PSoC Creator assigns the instance name "EEPROM_1" to the first instance of a
component in a given design. You can rename it to any unique value that follows the syntactic
rules for identifiers. The instance name becomes the prefix of every global function name,
variable, and constant symbol. For readability, the instance name used in the following table is
"EEPROM"
Note that the contents of EEPROM memory will not be available until the corresponding block
was started using the EEPROM_Start() API.
Functions
Function
Description
EEPROM_Enable()
Enables EEPROM block operation
EEPROM_Start()
Starts EEPROM
EEPROM_Stop()
Stops and powers down EEPROM
EEPROM_WriteByte()
Writes a byte of data to the EEPROM.
EEPROM_ReadByte()
Reads a byte of data from the EEPROM.
EEPROM_UpdateTemperature()
Updates store temperature value.
EEPROM_EraseSector()
Erases an EEPROM sector
EEPROM_Write()
Blocks while writing a row to EEPROM
EEPROM_StartWrite()
Starts writing a row of data to EEPROM
EEPROM_Query()
Checks the state of a write to EEPROM
EEPROM_ByteWritePos()
Writes a byte of data to EEPROM
Document Number: 001-96734 Rev. **
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EEPROM
PSoC Creator™ Component Datasheet
void EEPROM_Enable(void)
Description:
Enables EEPROM block operation.
Parameters:
None
Return Value:
None
Side Effects:
A call to EEPROM_Start() calls EEPROM_Enable(). You can call either EEPROM_Start() or
EEPROM_Enable() directly; both have the same effect. After calling this API, theEEPROM
needs 5 µS to start, so no write requests should be performed.
void EEPROM_Start(void)
Description:
Starts the EEPROM. This has to be called before using write/erase APIs and reading the
EEPROM.
Parameters:
None
Return Value:
None
Side Effects:
A call to EEPROM_Start() calls EEPROM_Enable(). You can call either EEPROM_Start() or
EEPROM_Enable() directly; both have the same effect. After calling this API, the EEPROM
needs 5 µS to start, so no write requests should be performed.
void EEPROM_Stop(void)
Description:
Stops and powers down the EEPROM.
Parameters:
None
Return Value:
None
Side Effects:
None
cystatus EEPROM_WriteByte(uint8 dataByte, uint16 address)
Description:
Writes a byte of data to the EEPROM. This function blocks until the function is complete. For
reliable write procedure to occur you should call EEPROM_UpdateTemperature() API if the
temperature of the silicon has changed for more than 10°C since component was started.
Parameters:
dataByte: Byte of data to write to the EEPROM
address: Address of data to be written. Maximum address is dependent on EEPROM size.
Return Value:
Side Effects:
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Value
Description
CYRET_SUCCESS
Successful completion
CYRET_BAD_PARAM
Row number or byte number out
CYRET_LOCKED
SPC locked by another operation
CYRET_UNKNOWN
Other error from the SPC
None
Document Number: 001-96734 Rev. **
®
PSoC Creator™ Component Datasheet
EEPROM
uint8 EEPROM_ReadByte(uint16 address)
Description:
Reads a byte of data from the EEPROM. Although the data is present in one of the memory
spaces, this provides an intuitive user interface, addressing EEPROM memory as a separate
block with first EERPOM address 0x0000.
Parameters:
address: Address array of data in EEPROM to be read. Maximum address is dependent on
EEPROM size.
Return Value:
Data located at address.
Side Effects:
None
uint8 EEPROM_UpdateTemperature(void)
Description:
Updates store temperature value. This should be called anytime the EEPROM is active and
temperature may have changed by more than 10C.
Parameters:
None
Return Value:
Status of operation, 0 if operation complete, non-zero value if error was detected.
Side Effects:
None
cystatus EEPROM_EraseSector(uint8 sectorNumber)
Description:
Erases a sector (64 rows) of memory by making the bits zero. This function blocks until the
operation is complete. Using this API helps to erase EEPROM a sector at a time. This is
faster than using individual writes but affects cycle recourse of the whole row.
Parameters:
sectorNumber: Sector number to erase
Return Value:
Side Effects:
Value
Description
CYRET_SUCCESS
Successful completion
CYRET_BAD_PARAM
Sector number out of range
CYRET_LOCKED
SPC locked by another operation
CYRET_UNKNOWN
Other error from the SPC
None
Document Number: 001-96734 Rev. **
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EEPROM
PSoC Creator™ Component Datasheet
cystatus EEPROM_Write(const uint8 *rowData, uint8 rowNumber)
Description:
Writes a row (16 bytes) of data to the EEPROM. This function blocks until the function is
complete. Compared to APIs that write one byte, this API allows you to write a whole row (16
bytes) at a same time.
Parameters:
rowData: Address of the data to write to the EEPROM
rowNumber: Row number to write
Return Value:
Side Effects:
Value
Description
CYRET_SUCCESS
Successful completion
CYRET_BAD_PARAM
Row number or byte number out
CYRET_LOCKED
SPC locked by another operation
CYRET_UNKNOWN
Other error from the SPC
None
cystatus EEPROM_StartWrite(const uint8 *rowData, uint8 rowNumber)
Description:
Starts the write of a row (16 bytes) of data to the EEPROM. This function does not block. The
function returns once the SPC has begun writing the data. This function must be used in
combination with EEPROM_Query(). EEPROM_Query() must be called until it returns a
status other than CYRET_STARTED. That indicates the write has completed. Until
EEPROM_Query() detects that the write is complete the SPC is marked as locked to prevent
another SPC operation from being performed. For reliable write procedure to occur you
should call EEPROM_UpdateTemperature() API if the temperature of the silicon has
changed for more than 10°C since component was started.
Parameters:
rowData: Address of the data to write to the EEPROM
rowNumber: Row number to write
Return Value:
Side Effects:
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Value
Description
CYRET_SUCCESS
Successful completion
CYRET_BAD_PARAM
Row number or byte number out
CYRET_LOCKED
SPC locked by another operation
CYRET_UNKNOWN
Other error from the SPC
After calling this API, the device should not be powered down, reset, or switched to low
power mode until the EEPROM operation is complete. Not following this recommendation
may lead to data corruption or silicon unexpected behavior.
Document Number: 001-96734 Rev. **
®
PSoC Creator™ Component Datasheet
EEPROM
cystatus EEPROM_StartErase(uint8 sectorNumber)
Description:
Starts the EEPROM sector erase. This function does not block. The function returns once the
SPC has begun writing the data. This function must be used in combination with
EEPROM_Query(). EEPROM_Query() must be called until it returns a status other than
CYRET_STARTED. That indicates the erase has completed. Until EEPROM_Query()
detects that the erase is complete the SPC is marked as locked to prevent another SPC
operation from being performed.
Parameters:
rowData: Address of the data to write to the EEPROM
rowNumber: Row number to write
Return Value:
Side Effects:
Value
Description
CYRET_SUCCESS
Successful completion
CYRET_BAD_PARAM
Row number or byte number out
CYRET_LOCKED
SPC locked by another operation
CYRET_UNKNOWN
Other error from the SPC
After calling this API device should not be powered down, reset or switched to low power
mode until EEPROM operation isn’t complete. Not following this recommendation may lead
to data corruption or silicon unexpected behavior.Not following this recommendation may
lead to data corruption or silicon unexpected behavior.
cystatus EEPROM_Query(void)
Description:
Checks the status of an earlier call to EEPROM_StartWrite() or EEPROM_StartErase(). This
function must be called until it returns a value other than CYRET_STARTED. Once that
occurs the write has been completed and the SPC is unlocked.
Parameters:
None
Return Value:
Side Effects:
Value
Description
CYRET_SUCCESS
Successful completion. Write has completed.
CYRET_STARTED
Write has not yet completed
CYRET_UNKNOWN
Other error from the SPC
None
Document Number: 001-96734 Rev. **
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EEPROM
PSoC Creator™ Component Datasheet
cystatus EEPROM_ByteWritePos(unit8 dataByte, uint8 rowNumber, uint8 byteNumber)
Description:
Writes a byte of data to EEPROM. Compared to EEPROM_WriteByte() this API allows to
write a specific byte in a specified EEPROM row. This is a blocking call. It will not return until
the function succeeds or fails.
Parameters:
dataByte: Byte of data to write to the EEPROM
rowNumber: Row number to write
byteNumber: Byte number within the row to write
Return Value:
Side Effects:
Value
Description
CYRET_SUCCESS
Successful completion
CYRET_BAD_PARAM
Row number or byte number out
CYRET_LOCKED
SPC locked by another operation
CYRET_UNKNOWN
Other error from the SPC
None
Sample Firmware Source Code
PSoC Creator provides numerous example projects that include schematics and example code
in the Find Example Project dialog. For component-specific examples, open the dialog from the
Component Catalog or an instance of the component in a schematic. For general examples,
open the dialog from the Start Page or File menu. As needed, use the Filter Options in the
dialog to narrow the list of projects available to select.
Refer to the "Find Example Project" topic in the PSoC Creator Help for more information.
MISRA Compliance
This section describes the MISRA-C:2004 compliance and deviations for the component. There
are two types of deviations defined:


project deviations – deviations that are applicable for all PSoC Creator components
specific deviations – deviations that are applicable only for this component
This section provides information on component-specific deviations. Project deviations are
described in the MISRA Compliance section of the System Reference Guide along with
information on the MISRA compliance verification environment.
The EEPROM component does not have any specific deviations.
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Document Number: 001-96734 Rev. **
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PSoC Creator™ Component Datasheet
EEPROM
API Memory Usage
The component memory usage varies significantly, depending on the compiler, device, number
of APIs used and component configuration. The following table provides the memory usage for
all APIs available in the given component configuration.
The measurements have been done with the associated compiler configured in Release mode
with optimization set for Size. For a specific design the map file generated by the compiler can
be analyzed to determine the memory usage.
PSoC 3 (Keil_PK51)
Configuration
Default
PSoC 5LP (GCC)
Flash
SRAM
Flash
SRAM
Bytes
Bytes
Bytes
Bytes
1228
0
796
0
References
Refer also to the Die Temperature component datasheet and the System Reference Guide.
Resources
The EEPROM component uses EEPROM capability of the device.
DC and AC Electrical Characteristics
Specifications are valid for –40 °C ≤ TA ≤ 85 °C and TJ ≤ 100 °C, except where noted.
Specifications are valid for 1.71 V to 5.5 V, except where noted.
DC Specifications
Parameter
Description
Conditions
Erase and program voltage
Min
Typ
Max
1.71
--
5.5
Units
V
AC Specifications
Parameter
TWRITE
Description
Min
Typ
Max
Units
Single row erase/write cycle
time
--
2
20
ms
EEPROM data retention time,
Average ambient temp, TA ≤ 25°C,
retention period measured from 1M erase/program cycles
20
--
--
years
Document Number: 001-96734 Rev. **
Conditions
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EEPROM
PSoC Creator™ Component Datasheet
Parameter
Description
last erase cycle
Conditions
Min
Typ
Max
Average ambient temp, TA ≤ 55°C,
100K erase/program cycles
20
--
--
Average ambient temp, TA ≤ 85°C,
10K erase/program cycles
10
--
--
Units
Component Changes
This section lists the major changes in the component from the previous version.
Version
Description of Changes
Reason for Changes / Impact
3.0
Added APIs for non-blocking EEPROM access.
Renamed EEPROM_QueryWrite() and
EEPROM_ByteWrite() APIs to EEROM_Query and
EEPROM_ByteWritePos() respectfully.
Updated component requirements.
2.10.b
Updated datasheet.
Removed references to obsolete PSoC 5 device.
2.10.a
Updated EEPROM_Start/EEPROM_Enable API
descriptions, added clarification on accessing
floating point integers on PSoC 3.
To clarify the component operation.
2.10
Added MISRA Compliance section.
The component does not have any specific
deviations.
2.0.a
Updated AC and DC characteristics section.
Keeping AC and DC characteristics aligned with
the device datasheet.
Added information about EEPROM memory initial
state.
Clarify the component operation and refer to the
device datasheet for the initial state of the
EEPROM memory.
Added support for PSoC 5LP silicon.
To support the byte write capability.
2.0
Added new API EEPROM_ByteWrite().
1.60
Codes changes in EEPROM_Write(),
EEPROM_StartWrite(), EEPROM_QueryWrite()
and EEPROM_EraseSector().
To support the SPC code changes.
Removed CySetTemp() calls from
EEPROM_Write() and EEPROM_StartWrite() APIs.
For better performance.
Minor code changes in the APIs EEPROM_Write(),
EEPROM_StartWrite() and
EERPOM_QueryWrite().
For better performance.
Code changes in the EEPROM_ EaraseSector()
API to support PSoC5.
PSoC 5 silicon supports the Erase Sector
command.
EEPROM_EraseSector() API description changes
in the datasheet
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Document Number: 001-96734 Rev. **
®
PSoC Creator™ Component Datasheet
Version
EEPROM
Description of Changes
Reason for Changes / Impact
1.50.b
Added explanation of how to acquire temperature to Clarity
datasheet.
1.50.a
Added characterization data to datasheet
Noted in EEPROM_EraseSector() API in datasheet
that it is only available for PSoC 3 Production or
later.
Minor datasheet edits and updates
1.50
Modified the EEPROM.c file to switch the include
file from cydevice.h file to cydevice_trm.h.
The cydevice.h file is obsolete. So the generated
source and APIs provided with PSoC Creator
should use cydevice_trm.h instead.
Updated the EEPROM_EraseSector() section of the The Erase Sector command does not function on
example code.
EEPROM for PSOC 3 ES1 and ES2 silicon or on
PSOC 5 silicon. This API can be used on
EEPROM for PSOC 3 Production or later.
Added EEPROM_Enable(), EEPROM_Start(), and
EEPROM_Stop() APIs.
To support PSoC 3 Production silicon
requirement that the EEPROM is powered off by
default.
A call to EEPROM_Start() will call
EEPROM_Enable(). You can call either
EEPROM_Start() or EEPROM_Enable() function
directly; both have the same effect.
1.20.a
Moved component into subfolders of the component
catalog.
Added information to the component that advertizes The tool reports an error/warning if the
its compatibility with silicon revisions.
component is used on incompatible silicon. If this
happens, update to a revision that supports your
target device.
1.20
Updated the Configure dialog.
Digital Port was changed to Pins component in
the schematic.
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Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in lifesupport systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application
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Document Number: 001-96734 Rev. **
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