PSoC® Creator™ Component Datasheet EEPROM 2.0 Features 512 B to 2 KB EEPROM memory 1,000,000 cycles, 20-year retention Read 1 byte at a time Program a single byte or 16 bytes(a row) at a time General Description The EEPROM component provides a set of APIs to erase and write data to nonvolatile EEPROM memory. The term write implies that it will erase and then program in one operation. An EEPROM memory in PSoC devices is organized in arrays. PSoC 3 and PSoC 5 devices offer an EEPROM array of size 512 bytes, 1KB or 2KB depending on the device. This array is divided into rows of size 16 bytes each. The API set of the EEPROM component supports write operations at the byte and row levels and erase operation at the sector level. A sector in EEPROM has 64 rows. The EEPROM component is tightly coupled with various system elements contained within the cy_boot component. These elements are generated upon a successful build. Refer to the System Reference Guide for more information about the cy_boot component and its various elements. When to use an EEPROM An EEPROM component can be used for the below purposes: For additional storage of data (freeing up on-chip RAM) For read-only (or rarely-changing) program data For data that must survive power cycles (for example, calibration tables or device configuration) Input/Output Connections There are no I/O connections for the EEPROM component. It is an API only. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-79354 Rev. *A Revised August 3, 2015 PSoC® Creator™ Component Datasheet EEPROM Component Parameters The EEPROM has no configurable parameters other than standard Instance Name and Built-in parameters. Application Programming Interface Application Programming Interface (API) routines allow you to configure the component using software. The following table lists and describes the interface to each function. The subsequent sections cover each function in more detail. There is no need of APIs to read from the EEPROM. The entire content of the EEPROM is mapped into memory space and can be read directly. EEPROM allows read access at the byte level. The following defines are used for reading EEPROM: CYDEV_EE_BASE – The base pointer of the EEPROM memory CYDEV_EE_SIZE – The size of the EEPROM memory space in bytes CYDEV_EEPROM_ROW_SIZE – The size of a row of the EEPROM in bytes Using the base pointer, individual bytes of the EEPROM memory can be read. To navigate to a specific row the base pointer must be incremented by the number of times of the size of the EEPROM row. SIZEOF_EEPROM_ROW define can be used instead of CYDEV_EEPROM_ROW_SIZE. EEPROM_1_EEPROM_SIZE is also defined as the size of the EEPROM memory space in bytes (where EEPROM_1 is the instance name of the EEPROM component). It is necessary to acquire the die temperature by calling the CySetTemp() before a series of EEPROM write operations. The CySetTemp() function queries SPC for the die temperature and stores it in a global variable, which is used while performing EEPROM write operations. If the application is used in an environment where the die temperature changes 5°C or more, the temperature should be refreshed to adjust the write times for the optimal performance. By default, PSoC Creator assigns the instance name “EEPROM_1” to the first instance of a component in a given design. You can rename it to any unique value that follows the syntactic rules for identifiers. The instance name becomes the prefix of every global function name, variable, and constant symbol. For readability, the instance name used in the following table is “EEPROM.” Function Description EEPROM_Enable() Enables EEPROM block operation EEPROM_Start() Starts EEPROM EEPROM_Stop() Stops and powers down EEPROM EEPROM_EraseSector() Erases an EEPROM sector Page 2 of 9 Document Number: 001-79354 Rev. *A PSoC® Creator™ Component Datasheet Function EEPROM Description EEPROM_Write() Blocks while writing a row to EEPROM EEPROM_StartWrite() Starts writing a row of data to EEPROM EEPROM_QueryWrite() Checks the state of a write to EEPROM EEPROM_ByteWrite() Writes a byte of data to EEPROM void EEPROM_Enable(void) Description: Enables EEPROM block operation. This API is not available for PSoC 5 silicon. Parameters: None Return Value: None Side Effects: A call to EEPROM_Start() calls EEPROM_Enable(). You can call either EEPROM_Start() or EEPROM_Enable() directly; both have the same effect. void EEPROM_Start(void) Description: Starts the EEPROM. This has to be called before using write/erase APIs and reading the EEPROM. This API is not available for PSoC 5 silicon. Parameters: None Return Value: None Side Effects: A call to EEPROM_Start() calls EEPROM_Enable(). You can call either EEPROM_Start() or EEPROM_Enable() directly; both have the same effect. void EEPROM_Stop(void) Description: Stops and powers down the EEPROM. This API is not available for PSoC 5 silicon. Parameters: None Return Value: None Side Effects: None Document Number: 001-79354 Rev. *A Page 3 of 9 PSoC® Creator™ Component Datasheet EEPROM cystatus EEPROM_EraseSector(uint8 sectorNumber) Description: Erases a sector (64 rows) of memory by making the bits zero. This function blocks until the operation is complete. Parameters: uint8 sector. Sector number to erase Return Value: CYRET_SUCCESS if the operation was successful CYRET_BAD_PARAM if the parameter out of range CYRET_LOCKED if the EEPROM control block is busy CYRET_UNKNOWN if there was an EEPROM control block error Side Effects: None cystatus EEPROM_Write(const uint8 * rowData, uint8 rowNumber) Description: Writes a row (16 bytes) of data to the EEPROM. This is a blocking call. It will not return until the function succeeds or fails. Parameters: const uint8 * rowData. Address of the data to write to the EEPROM uint8 rowNumber. EEPROM row number to program Return Value: CYRET_SUCCESS if the operation was successful CYRET_BAD_PARAM if the parameter out of range CYRET_LOCKED if the EEPROM CONTROL BLOCK is busy CYRET_UNKNOWN if there was an EEPROM CONTROL BLOCK error Side Effects: None cystatus EEPROM_StartWrite(const uint8 * rowData, uint8 rowNumber) Description: Starts the SPC write function. This function does not block; it returns once the command has begun the SPC write function. This function must be used in combination with EEPROM_QueryWrite(). Once this function has been called, the SPC will be locked until EEPROM_QueryWrite() returns CYRET_SUCCESS. Parameters: const uint8 * rowData. Address of the data to write to the EEPROM uint8 rowNumber. EEPROM row number to program Return Value: CYRET_STARTED if the command to write was successfully started CYRET_BAD_PARAM if the parameter out of range CYRET_LOCKED if the EEPROM control block is busy CYRET_UNKNOWN if there was an EEPROM control block error Side Effects: Page 4 of 9 None Document Number: 001-79354 Rev. *A PSoC® Creator™ Component Datasheet EEPROM cystatus EEPROM_QueryWrite(void) Description: Checks the state of write to EEPROM. This function must be called until the return value is not CYRET_STARTED. Parameters: None Return Value: CYRET_SUCCESS if the operation was successful CYRET_STARTED if the command to write is still processing CYRET_UNKNOWN if there was an EEPROM control block error Side Effects: None cystatus EEPROM_ByteWrite(unit8 dataByte, uint8 rowNumber, uint8 byteNumber) Description: Writes a byte of data to EEPROM. This is a blocking call. It will not return until the function succeeds or fails. Parameters: uint8 dataByte. Byte of data to write to EEPROM uint8 rowNumber. EEPROM row number to program uint8 byteNumber. Byte number within the row to program Return Value: CYRET_SUCCESS if the operation was successful CYRET_BAD_PARAM if the parameters out of range CYRET_LOCKED if the EEPROM CONTROL BLOCK is busy CYRET_UNKNOWN if there was an EEPROM control block error Side Effects: None Sample Firmware Source Code PSoC Creator provides numerous example projects that include schematics and example code in the Find Example Project dialog. For component-specific examples, open the dialog from the Component Catalog or an instance of the component in a schematic. For general examples, open the dialog from the Start Page or File menu. As needed, use the Filter Options in the dialog to narrow the list of projects available to select. Refer to the “Find Example Project” topic in the PSoC Creator Help for more information. References Refer also to the Die Temperature component datasheet and the System Reference Guide. Document Number: 001-79354 Rev. *A Page 5 of 9 PSoC® Creator™ Component Datasheet EEPROM Resources The EEPROM component uses EEPROM capability of the device. API Memory Usage The component memory usage varies significantly, depending on the compiler, device, number of APIs used and component configuration. The following table provides the memory usage for all APIs available in the given component configuration. The measurements have been done with the associated compiler configured in Release mode with optimization set for Size. For a specific design the map file generated by the compiler can be analyzed to determine the memory usage. PSoC 3 (Keil_PK51) Configuration Default PSoC 5 (GCC) PSoC 5LP (GCC) Flash SRAM Flash SRAM Flash SRAM Bytes Bytes Bytes Bytes Bytes Bytes 768 0 552 0 524 0 DC and AC Electrical Characteristics for PSoC 3 Specifications are valid for –40 °C ≤ TA ≤ 85 °C and TJ ≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except where noted. DC Specifications Parameter Description Conditions Erase and program voltage Min Typ Max 1.71 -- 5.5 Units V AC Specifications Parameter TWRITE Description Conditions Single row erase/write cycle time EEPROM data retention time, Average ambient temp, TA ≤ 25°C, retention period measured from 1M erase/program cycles last erase cycle Average ambient temp, TA ≤ 55°C, 100K erase/program cycles Average ambient temp, TA ≤ 85°C, 10K erase/program cycles Page 6 of 9 Min Typ Max Units -- 2 15 ms 20 -- -- years 20 -- -- 10 -- -- Document Number: 001-79354 Rev. *A PSoC® Creator™ Component Datasheet EEPROM DC and AC Electrical Characteristics for PSoC 5 Specifications are valid for –40 °C ≤ TA ≤ 85 °C and TJ ≤ 100 °C, except where noted. Specifications are valid for 2.7 V to 5.5 V, except where noted. DC Specifications Parameter Description Conditions Erase and program voltage Min Typ Max Units 2.7 -- 5.5 V Min Typ Max Units -- 8.3 32 ms 20 -- -- years AC Specifications Parameter TWRITE Description Conditions Single row erase/write cycle time EEPROM data retention time, retention period measured from last erase cycle Document Number: 001-79354 Rev. *A Average ambient temp, TA ≤ 55°C, 1M erase/program cycles Page 7 of 9 PSoC® Creator™ Component Datasheet EEPROM Component Changes This section lists the major changes in the component from the previous version. Version Description of Changes 2.0.a Minor datasheet edit. 2.0 Added support for PSoC 5LP silicon. Reason for Changes / Impact To support the byte write capability. Added new API EEPROM_ByteWrite(). 1.60 Codes changes in EEPROM_Write(), EEPROM_StartWrite(), EEPROM_QueryWrite() and EEPROM_EraseSector(). To support the SPC code changes. Removed CySetTemp() calls from EEPROM_Write() and EEPROM_StartWrite() APIs. For better performance. Minor code changes in the APIs EEPROM_Write(), EEPROM_StartWrite() and EERPOM_QueryWrite(). For better performance. Code changes in the EEPROM_ EaraseSector() API to support PSoC5. PSoC 5 silicon supports the Erase Sector command. EEPROM_EraseSector() API description changes in the datasheet 1.50.b Added explanation of how to acquire temperature to Clarity datasheet. 1.50.a Added characterization data to datasheet Noted in EEPROM_EraseSector() API in datasheet that it is only available for PSoC 3 Production or later. Minor datasheet edits and updates 1.50 Modified the EEPROM.c file to switch the include file from cydevice.h file to cydevice_trm.h. The cydevice.h file is obsolete. So the generated source and APIs provided with PSoC Creator should use cydevice_trm.h instead. Updated the EEPROM_EraseSector() section of the The Erase Sector command does not function on example code. EEPROM for PSOC 3 ES1 and ES2 silicon or on PSOC 5 silicon. This API can be used on EEPROM for PSOC 3 Production or later. Added EEPROM_Enable(), EEPROM_Start(), and EEPROM_Stop() APIs. To support PSoC 3 Production silicon requirement that the EEPROM is powered off by default. A call to EEPROM_Start() will call EEPROM_Enable(). You can call either EEPROM_Start() or EEPROM_Enable() function directly; both have the same effect. Page 8 of 9 Document Number: 001-79354 Rev. *A PSoC® Creator™ Component Datasheet 1.20.a EEPROM Moved component into subfolders of the component catalog. Added information to the component that advertizes The tool reports an error/warning if the its compatibility with silicon revisions. component is used on incompatible silicon. If this happens, update to a revision that supports your target device. 1.20 Updated the Configure dialog. Digital Port was changed to Pins component in the schematic. © Cypress Semiconductor Corporation, 2010-2015. The information contained herein is subject to change without notice. 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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in lifesupport systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-79354 Rev. *A Page 9 of 9