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JANS 2N5152U3 and JANS 2N5154U3
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL,
JANSR, JANSF
RADIATION HARDENED
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DESCRIPTION
These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation
Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi
also offers numerous other products to meet higher and lower power voltage regulation
applications.
Important: For the latest information, visit our website http://www.microsemi.com.
U3 (SMD-0.5)
Package
FEATURES
•
JEDEC registered 2N5152 and 2N5154.
•
JANS RHA qualifications are available per MIL-PRF-19500/544.
Also available in:
TO-5 Package
(long-leaded)
JANS_2N5152L &
JANS_2N5154L
APPLICATIONS / BENEFITS
•
High frequency operation.
•
Lightweight.
•
High-speed power-switching applications.
•
High-reliability applications.
TO-39 Package
(leaded)
JANS_2N5152 &
JANS_2N5154
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
(1)
Reverse Pulse Energy
Collector Current (dc)
Collector to base voltage (static), emitter open
Collector to emitter voltage (static) base open
Emitter to base voltage (static) collector open
Steady-State Power Dissipation @ TA = +25 ºC
Steady-State Power Dissipation @ TC = +25 ºC
Symbol
Value
Unit
TJ and TSTG
RӨJA
RӨJC
-65 to +200
175
10
15
2
100
80
5.5
1
10
ºC
ºC/W
ºC/W
mJ
A
V
V
V
W
W
IC
VCBO
VCEO
VEBO
PD
PD
Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load
energy test circuit.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 1 of 8
JANS 2N5152U3 and JANS 2N5154U3
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic and gold over nickel plated steel.
TERMINALS: Gold over nickel plated tungsten/copper.
MARKING: Part number, date code, A = anode.
POLARITY: See schematic on last page.
WEIGHT: 0.9 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JANSM
2N5152
U3
Reliability Level
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
Symbol
Cobo
ICEO
ICEX
IEBO
hFE
VCEO
VCBO
VEBO
SMD Surface Mount Package
JEDEC type number
(See Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 2 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS @ TA = +25 ºC unless otherwise noted.
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
IC = 100 mA, IB = 0
Emitter-Base Cutoff Current
VEB = 4.0 V, IC = 0
VEB = 5.5 V, IC = 0
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0
VCE = 100 V, VBE = 0
Collector-Emitter Cutoff Current
VCE = 40 V, IB = 0
Symbol
Min.
V(BR)CEO
80
Max.
Unit
V
IEBO
1.0
1.0
µA
mA
ICES
1.0
1.0
µA
mA
ICEO
50
µA
Min.
Max.
Unit
20
50
30
70
20
40
--90
200
---
ON CHARACTERISTICS
Parameters / Test Conditions
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 5 V
IC = 2.5 A, VCE = 5 V
IC = 5A, VCE = 5V
Symbol
2N5152U3
2N5154U3
2N5152U3
2N5154U3
2N5152U3
2N5154U3
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
Base-Emitter Voltage Non-Saturation
IC = 2.5 A, VCE = 5 V
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
hFE
VCE(sat)
0.75
1.5
V
VBE
1.45
V
VBE(sat)
1.45
2.2
V
Max.
Unit
250
pF
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer
2N5152U3
Ratio
2N5154U3
IC = 500 mA, VCE = 5 V, f = 10 MHz
Small-signal short Circuit Forward-Current
Transfer Ratio
2N5152U3
2N5154U3
IC = 100 mA, VCE = 5 V, f = 1 KHz
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
T4-LDS-0100-2, Rev. 1 (120716)
Symbol
Min.
|hfe|
6
7
hfe
20
50
Cobo
©2012 Microsemi Corporation
Page 3 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
IC = 5 A, IB1 = 500 mA
Turn-Off Time
RL = 6Ω
Storage Time IB2 = -500 mA
Fall Time
Symbol
Max.
Unit
ton
0.5
µs
toff
1.5
µs
tS
1.4
µs
tf
0.5
µs
VBE(OFF) = 3.7 V
Min.
SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = +25 °C, tP = 1.0 s, 1 Cycle
Test 1
VCE = 5.0 V, IC = 2.0 A
Test 2
VCE = 32 V, IC = 310 mA
Test 3
VCE = 80 V, IC = 12.5 mA
IC – COLLECTOR CURRENT - A
dc Operation
TC < 25 ºC
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 4 of 8
JANS 2N5152U3 and JANS 2N5154U3
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Collector to Emitter Cutoff Current
VCE = 40 V
Emitter to Base Cutoff Current
VEB = 4 V
Breakdown Voltage, Collector to Emitter
IC = 100 mA
Collector to Emitter Cutoff Current
VCE = 60 V
Emitter to Base Cutoff Current
VEB = 5.5 V
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 5 V
Max.
Unit
ICEO
100
µA
IEBO
2.0
µA
V(BR)CEO
Min.
80
V
ICES
2.0
µA
IEBO
2.0
mA
(1)
IC = 2.5 A, VCE = 5 V
[10]
2N5154U3
[25]
2N5152U3
IC = 5 A pulsed, VCE = 5 V
Base to Emitter voltage (non-saturated)
VCE = 5 V, IC = 2.5 A, pulsed
Collector-Emitter Saturation Voltage
IC = 2.5 mA, IB = 250 mA, pulsed
IC = 500 mA, IB = 500 mA, pulsed
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
2N5152U3
[15]
90
2N5154U3
[35]
200
2N5152U3
[10]
2N5154U3
[20]
[hFE]
VBE
1.45
V
VCE(sat)
0.86
1.73
V
VBE(sat)
1.67
2.53
V
(1) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the preand post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radiation minimum hFE that it is based upon.
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 5 of 8
JANS 2N5152U3 and JANS 2N5154U3
DC Operation Maximum Rating (W)
GRAPHS
TC (°C) (Case)
DC Operation Maximum Rating (W)
FIGURE 1
Temperature-Power Derating Curve
TA (°C) (Ambient)
FIGURE 2
Temperature-Power Derating Curve
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 6 of 8
JANS 2N5152U3 and JANS 2N5154U3
o
Theta ( CW)
GRAPHS (continued)
Time (sec)
FIGURE 3
Maximum Thermal Impedance (RӨJC)
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 7 of 8
JANS 2N5152U3 and JANS 2N5154U3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
Schematic
T4-LDS-0100-2, Rev. 1 (120716)
©2012 Microsemi Corporation
Symbol
BL
BW
CH
LH
LL1
LL2
LS1
LS2
LW1
LW2
Q1
Q2
Term 1
Term 2
Term 3
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
.395
.405
10.03
10.29
.291
.301
7.39
7.65
.112
.124
2.84
3.15
.010
.020
0.25
0.51
.220
.230
5.59
5.84
.115
.125
2.92
3.18
3.81 BSC
.150 BSC
1.91 BSC
.075 BSC
.281
.291
7.14
7.39
.090
.100
2.29
2.54
.030
0.76
.030
0.76
Cathode
Anode (See Schematic)
Anode (See Schematic)
Page 8 of 8