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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/630
DEVICES
LEVELS
2N7389
2N7389U
JANSR(100K RAD(Si))
JANSF(300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
-100
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
ID1
-6.5
Adc
ID2
-4.1
Adc
Continuous Drain Current
TC = +25°C
Continuous Drain Current
TC = +100°C
Max. Power Dissipation
Ptl
Drain to Source On State Resistance
Rds(on)
Operating & Storage Temperature
Top, Tstg
25
(1)
W
0.3
(2)
Ω
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = -12Vdc, ID = -4.1A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions
Symbol
Min.
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
V(BR)DSS
-100
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -1.0mA
VDS ≥ VGS, ID = -1.0mA, Tj = +125°C
VDS ≥ VGS, ID = -1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
IDSS1
IDSS2
-25
-0.25
µAdc
mAdc
rDS(on)1
rDS(on)2
0.3
0.35
Ω
Ω
rDS(on)3
0.54
Ω
VSD
-3.0
Vdc
Static Drain-Source On-State Resistance
VGS = -12V, ID = -4.1A pulsed
VGS = -12V, ID = -6.5A pulsed
Tj = +125°C
VGS = -12V, ID = -4.1A pulsed
Diode Forward Voltage
VGS = 0V, ID = -6.5A pulsed
T4-LDS-0126 Rev. 1 (091145)
Max.
TO-205AF
(modified TO-39)
JANSR2N7389, JANSF2N7389
See Figure 1
Unit
Vdc
-4.0
Vdc
-5.0
18 PIN LEADLESS CHIP
CARRIER
JANSR2N7389U, JANSF2N7389U
See Figure 2
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/630
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
Min.
Max.
Qg(on)
Qgs
Qgd
VGS = -12V, ID = -6.5A
VDS = -50V
45
10
25
Unit
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = -6.5A, VGS = -12Vdc,
Gate drive impedance = 7.5Ω,
VDD = -50Vdc
Diode Reverse Recovery Time
di/dt ≤ -100A/µs, VDD ≤ -50V,
IF = -6.5A
Min.
Max.
td(on)
tr
td(off)
tf
30
50
70
70
trr
250
Unit
ns
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
V(BR)DSS
-100
VGS(th)1
VGS(th)1
-2.0
-2.0
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -1.0mA JANSR
VDS ≥ VGS, ID = -1.0mA JANSF
Max.
Unit
Vdc
-4.0
-5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
±100
nAdc
Drain Current
VGS = 0V, VDS = -80V
IDSS1
-25
µAdc
VDS(on)
1.23
Vdc
VSD
-3.0
Vdc
Static Drain-Source On-State Voltage
VGS = -12V, ID = -4.1A pulsed
Diode Forward Voltage
VGS = 0V, ID = -6.5A pulsed
Note:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)
conditions.
T4-LDS-0126 Rev. 1 (091145)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/630
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7389 device has been characterized at the Texas A&M cyclotron. The following
SOA curve has been established using the elements, LET, range, and Total Energy conditions as shown:
2N7389
-110
TAMU Ar
LET = 8.1
Range=230um
Total Energy=558MeV
-100
-90
Drain Bias, V
-80
TAMU Kr
LET = 26.8
Range=170um
Total Energy=1121MeV
-70
-60
-50
TAMU Ag
LET = 40.6
Range=150um
Total Energy=1426MeV
-40
-30
TAMU Au
LET=80.2
Range=155um
Total Energy=1884MeV
-20
-10
0
0
5
10
15
Gate Bias, V
20
25
It should be noted that total energy levels are considered to be a factor in SEE
characterization. Comparisons to other datasets should not be based on LET alone. Please consult
factory for more information.
T4-LDS-0126 Rev. 1 (091145)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/630
Figure 1: Case Outline and Pin Configuration for JANSR2N7389 & JANSF2N7389
T4-LDS-0126 Rev. 1 (091145)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/630
Figure 2: Case Outline and Pin Configuration for JANSR2N7389U & JANSF2N7389U
T4-LDS-0126 Rev. 1 (091145)
Page 5 of 5