APT8018L2VFR
800V 43A
POWER MOS V® FREDFET
0.180Ω
L2VFR
TO-264
Max
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8018L2VFR
UNIT
800
Volts
Drain-Source Voltage
43
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
1
172
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
43
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 21.5A)
TYP
MAX
UNIT
Volts
0.180
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
5-2004
Characteristic / Test Conditions
050-7252 Rev A
Symbol
APT8018L2VFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
Test Conditions
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
1180
Reverse Transfer Capacitance
f = 1 MHz
610
Crss
Qg
Total Gate Charge
Qgs
VGS = 10V
610
60
ID = 43A @ 25°C
360
VGS = 15V
19
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
VDD = 400V
17
ID = 43A @ 25°C
80
RG = 0.6Ω
12
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
10700
VDD = 400V
3
MAX
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
43
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
172
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -43A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
15.5
Tj = 125°C
27
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.15
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.12
0.7
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7252 Rev A
5-2004
0.16
0.3
Duty Factor D = t1/t2
0.1
0
10-5
t1
t2
0.04
SINGLE PULSE
0.05
10-4
°C/W
4 Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 43A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID43A di/dt ≤ 700A/µs VR ≤800V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.08
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8018L2VFR
RC MODEL
Junction
temp. (°C)
0.0545
0.0487F
Power
(watts)
0.0957
0.922F
ID, DRAIN CURRENT (AMPERES)
120
VGS =15 &10V
100
6V
5.5V
80
60
5V
40
4.5V
20
Case temperature. (°C)
0
120
1.40
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
TJ = -55°C
40
TJ = +25°C
20
TJ = +125°C
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
I
D
1.10
1.05
1.00
0.95
0.90
-50
= 21.5A
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
2.0
1.5
1.0
0.5
0.0
-50
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
NORMALIZED TO
= 10V @ 21.5A
GS
1.30
1.15
50
ID, DRAIN CURRENT (AMPERES)
V
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
5-2004
0
0
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7252 Rev A
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
4V
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
D
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
= 43A
12
VDS=160V
8
VDS=400V
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Crss
100
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Coss
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
VDS=640V
4
0
APT8018L2VFR
30,000
172
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 MAXTM(L2) Package Outline (L2VFR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
050-7252 Rev A
5-2004
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.