APT60M80L2VR_B.PDF

APT60M80L2VR
600V 65A 0.080Ω
POWER MOS V® MOSFET
L2VR
TO-264
Max
V®
Power MOS
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package
• Avalanche Energy Rated
D
• Faster Switching
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT60M80L2VR
UNIT
600
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
260
TL
EAS
65
-55 to 150
°C
300
Amps
65
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 32.5A)
TYP
MAX
Volts
0.080
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
6-2004
Characteristic / Test Conditions
050-5991 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT60M80L2VR
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1610
Crss
Reverse Transfer Capacitance
f = 1 MHz
700
VGS = 10V
590
VDD = 300V
50
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 65A @ 25°C
tf
24
VDD = 300V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
31
INDUCTIVE SWITCHING @ 25°C
6
1880
VDD = 400V, VGS = 15V
6
ns
70
ID = 65A @ 25°C
Turn-off Delay Time
nC
14
VGS = 15V
Rise Time
td(off)
pF
310
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
13300
VGS = 0V
3
MAX
ID = 65A, RG = 5Ω
2830
INDUCTIVE SWITCHING @ 125°C
3100
VDD = 400V, VGS = 15V
ID = 65A, RG = 5Ω
µJ
3345
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
65
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID65A, dl S/dt = 100A/µs)
937
ns
Q
Reverse Recovery Charge (IS = -ID65A, dl S/dt = 100A/µs)
29
µC
rr
dv/
dt
Peak Diode Recovery
dv/
260
(Body Diode)
1.3
(VGS = 0V, IS = -ID65A)
dt
Amps
Volts
8
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.15
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 65A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.12
0.7
0.10
0.08
0.5
Note:
0.06
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5991 Rev B
6-2004
0.16
0.14
0.3
0.04
0
t1
t2
0.02
SINGLE PULSE
0.1
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT60M80L2VR
180
6.5V
RC MODEL
Junction
temp. (°C)
0.0456
0.0272F
Power
(watts)
0.104
0.493F
ID, DRAIN CURRENT (AMPERES)
160
Case temperature. (°C)
140
120
100
80
60
TJ = +125°C
0
TJ = +25°C
0
TJ = -55°C
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
5.5V
80
5V
60
40
4.5V
20
4V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
I
D
V
= 32.5A
GS
NORMALIZED TO
= 10V @ I = 32.5A
GS
D
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0.8
0
20
40
60
80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
100
1.15
70
0.0
-50
120
1.1
1.0
0.9
0.8
6-2004
20
6V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5991 Rev B
ID, DRAIN CURRENT (AMPERES)
160
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
140
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
180
15 &10V
OPERATION HERE
LIMITED BY RDS (ON)
100
Ciss
100µS
10
1
1mS
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
= 65A
D
12
VDS=120V
8
VDS=300V
VDS=480V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
5000
Coss
1000
Crss
500
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
I
10,000
100
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT60M80L2VR
50,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
260
600
200
100
TJ =+150°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
V
DD
R
G
400
V
DD
R
L = 100µH
tf
T = 125°C
J
300
J
150
= 400V
= 5Ω
G
= 400V
= 5Ω
T = 125°C
td(off)
tr and tf (ns)
td(on) and td(off) (ns)
500
L = 100µH
200
100
50
100
tr
td(on)
0
30
0
30
70
90
110
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
8,000
50
V
DD
R
G
70
90
110
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
D
Eoff
E ON includes
diode reverse recovery.
4,000
Eon
2,000
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
6-2004
L = 100µH
0
30
DD
I
J
6,000
50
V
= 400V
= 5Ω
T = 125°C
050-5991 Rev B
TJ =+25°C
= 400V
= 65A
T = 125°C
20,000
J
L = 100µH
EON includes
diode reverse recovery.
Eoff
15,000
10,000
Eon
5,000
0
40
50
60
70 80
90 100 110
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT60M80L2VR
Gate Voltage
10%
90%
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
Drain Current
90%
90%
tr
Drain Voltage
tf
5%
10%
5%
Drain Voltage
Switching Energy
Switching Energy
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2VFR) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
6-2004
2.29 (.090)
2.69 (.106)
050-5991 Rev B
Drain
5.79 (.228)
6.20 (.244)
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