2N3960 Qualified Levels: JAN, JANTX, and JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960 epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a thru-hole TO-18 package. This device is also available in a low profile ceramic UB package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N3960 number • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/366. TO-18 (TO-206AA) Package (See part nomenclature for all available options.) • RoHS compliant versions available Also available in: UB package (surface mount) 2N3960UB APPLICATIONS / BENEFITS • • • • General purpose transistors for medium power applications requiring high frequency switching Leaded, hermetically sealed TO-18 package Lightweight Military and other high-reliability applications MAXIMUM RATINGS @ T C = +25 ºC unless otherwise noted Parameters / Test Conditions Symbol Value Unit Junction & Storage Temperature Range TJ , Tstg -65 to +200 °C Collector-Emitter Voltage V CEO 12 V Collector-Base Voltage V CBO 20 V V EBO 4.5 V PT 400 mW Emitter-Base Voltage Total Power Dissipation @ TA = +25 °C (1) Notes: 1. Derate linearly 2.3 mW/°C above TA = +25 °C. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 1 of 4 2N3960 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, nickel plated kovar base, nickel cap TERMINALS: Kovar with Gold plate over nickel for JANS, plus solder dip for JAN, JANTX, and JANTXV MARKING: Part number, date code, manufacturer’s ID WEIGHT: Approximately 0.3 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3960 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial SYMBOLS & DEFINITIONS Definition Symbol IB IC V CB V CBO V CE V CEO V CC V EB V EBO JEDEC type number (see Electrical Characteristics table) Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Emitter-base voltage: The dc voltage between the emitter and the base Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 2 of 4 2N3960 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 10 µA, pulsed Collector-Base Cutoff Current V CB = 20 V Emitter-Base Cutoff Current V EB = 4.5 V V (BR)CEO Min. Max. Unit V 12 I CBO 10 µA I EBO 10 µA Collector-Emitter Cutoff Current V CE = 10 V, V EB = 0.4 V V CE = 10 V, V EB = 2.0 V I CEX1 I CEX2 1 5 µA nA ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I C = 1.0 mA, V CE = 1 V I C = 10 mA, V CE = 1 V I C = 30 mA, V CE = 1 V h FE Collector-Emitter Saturation Voltage I C = 1.0 mA, I B = 0.1 mA I C = 30 mA, I B = 3.0 mA 40 60 30 300 V CE(sat) 0.2 0.3 V V BE 0.8 1.0 V C obo 2.5 pF C ibo 2.5 pF Base-Emitter Saturation Voltage I C = 1.0 mA, V CE = 1.0 V I C = 30 mA, V CE = 1.0 V DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude I C = 5.0 mA, V CE = 4 V, f = 100 MHz I C = 10 mA, V CE = 4 V, f = 100 MHz I C = 30 mA, V CE = 4 V, f = 100 MHz Output Capacitance V CB = 4 V, I E = 0, 100 kHz < f < 1 MHz Input Capacitance V EB = 0.5 V, I C = 0, 100 kHz < f < 1.0 MHz |h fe | 13 14 12 (1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0% T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 3 of 4 2N3960 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inch Millimeters Min Max Min Max 0.178 0.195 4.52 4.95 0.170 0.210 4.32 5.33 0.209 0.230 5.31 5.84 0.100 TP 2.54 TP 0.016 0.021 0.41 0.53 0.500 0.750 12.70 19.05 0.016 0.019 0.41 0.48 0.050 1.27 0.250 6.35 0.100 2.54 0.040 1.02 0.028 0.048 0.71 1.22 0.036 0.046 0.91 1.17 0.010 0.25 45° TP 45° TP Note 6 7,11 7 12 7 7 5 4 3 9 10 6 NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 inch (1.37 mm) +.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm). 10. Symbol r applied to both inside corners of tab. 11. Measured in a zone beyond 0.250 (6.35 mm) from the seating plane. 12. Measured in the zone between 0.050 (1.27 mm) and 0.250 (6.35 mm) from the seating plane. 13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 14. Lead 1 is emitter, lead 2 is base, and case is collector. T4-LDS-0161, Rev. 2 (10/15/13) ©2013 Microsemi Corporation Page 4 of 4