MICROSEMI 2N3960UB

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/399
DEVICES
LEVELS
2N3960
2N3960UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
Total Power Dissipation @ TA = +25°C
PT (1)
0.4
W
Top, Tstg
-65 to +200
°C
Operating & Storage Junction Temperature Range
TO-18 – 2N3960
Note:
Derate linearly 2.3mW/°C above TA = +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
V(BR)CEO
12
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10μAdc
UB – 2N3960UB
Collector-Base Cutoff Current
VCB = 20Vdc
ICBO
Emitter-Base Cutoff Current
VEB = 4.5Vdc
IEBO
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
VCE = 10Vdc, VBE = 2.0Vdc
ICEX1
ICEX2
T4-LDS-0161 Rev. 1 (100514)
Vdc
10
μAdc
10
μAdc
1
5
μAdc
ηAdc
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 1mAdc, VCE = 1Vdc
IC = 10mAdc, VCE = 1Vdc
40
hFE
Base-Emitter Saturation Voltage
VCE = 1.0Vdc, IC = 1.0mAdc
VCE = 1.0Vdc, IC = 3.0mAdc
300
30
IC = 30mAdc, VCE = 1Vdc
Collector-Emitter Saturation Voltage
IC = 1.0mAdc, IB = 0.1mAdc
IC = 30mAdc, IB = 3.0mAdc
60
VCE(sat)
0.2
0.3
Vdc
VBE(sat)
0.8
1.0
Vdc
Max.
Unit
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small – Signal Short – Circuit - Forward Current Transfer
Ratio
IC = 5.0mAdc, VCE = 4Vdc, f = 100MHz
IC = 10.0mAdc, VCE = 4Vdc, f = 100MHz
IC = 30.0mAdc, VCE = 4Vdc, f = 100MHz
Symbol
|hfe|
Min.
13
14
12
Output Capacitance
VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
2.5
pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
2.5
pF
T4-LDS-0161 Rev. 1 (100514)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
.750
12.70
19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.040
1.02
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Note
6
7,11
7
12
7
7
5
4
3
9
10
6
NOTES:
1.
* 2.
3.
4.
5.
6.
Dimensions are in inches.
Millimeters are given for general information only.
Symbol TL is measured from HD maximum.
Details of outline in this zone are optional.
Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within
.007 inch (0.18
mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
10. Symbol r applied to both inside corners of tab.
11. Measured in a zone beyond .250 (6.35 mm) from the seating plane.
12. Measured in the zone between .050 (1.27 mm) and .250 (6.35mm) from the seating plane.
* 13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* 14. Lead 1 = emitter, lead 2 = base, and case is collector.
*FIGURE 1. Physical dimensions (similar to TO-18)
T4-LDS-0161 Rev. 1 (100514)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056
1.17
1.42
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.128
3.25
.108
2.74
.022
.038
0.56
0.96
0.17
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.036
.040
0.91
1.02
.071
.079
1.81
2.01
.016
.024
0.41
0.61
.008
.203
.012
.306
.022
.559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Lid material: Kovar.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions, 2N3960UB, surface mount
T4-LDS-0161 Rev. 1 (100514)
Page 4 of 4