ARF473_C.pdf

Common Source
Push-Pull Pair
ARF473
D
AR
F47
G
G
RF POWER MOSFET
S
(Flange)
3
D
N - CHANNEL ENHANCEMENT MODE
165 V 300 W 150 MHz
The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
• Specified 135 Volt, 130 MHz Characteristics:
•
Output Power = 300 Watts.
•
Gain = 13dB (Class AB)
•
Efficiency = 50%
• High Performance Push-Pull RF Package.
• High Voltage Breakdown and Large SOA
for Superior Ruggedness.
• Low Thermal Resistance.
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
(each device)
ARF473
UNIT
500
Volts
10
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Device Dissipation @ TC = 25°C
500
Watts
TJ,TSTG
TL
-55 to 200
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
VDS(ON)
IDSS
IGSS
gfs
gfs1 gfs2
/
VGS(TH)
∆VGS(TH)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
On State Drain Voltage
1
TYP
MAX
4
(I D(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C)
250
±100
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 5A)
Forward Transconductance Match Ratio (VDS = 25V, ID = 5A)
Gate Threshold Voltage (VDS = VGS, ID = 200mA)
4
6
Volts
µA
nA
mhos
0.9
1.1
3
5
0.1
Gate Threshold Voltage Match (VDS = VGS, ID = 200mA)
UNIT
Volts
THERMAL CHARACTERISTICS
MIN
RθJC
Junction to Case
RθCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
TYP
MAX
0.35
0.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
°C/W
6-2003
Characteristic
050-4920 Rev C
Symbol
DYNAMIC CHARACTERISTICS (per section)
Symbol
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
GPS
η
ψ
MIN
TYP
MAX
1200
1600
VDS = 50V
140
200
f = 1 MHz
9
12
VGS = 15V
5.1
10
VDD = 0.5 VDSS
4.1
8
ID = ID[Cont.] @ 25°C
12.8
20
RG = 1.6 Ω
4.0
8
MAX
VGS = 0V
Rise Time
Turn-off Delay Time
Fall Time
FUNCTIONAL CHARACTERISTICS
Symbol
ARF473
UNIT
pF
ns
(Push-Pull Configuration)
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 130MHz
13
14
dB
50
55
%
Idq = 150mA
Drain Efficiency
Electrical Ruggedness VSWR 5:1
VDD = 135V
Pout = 300W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
26
24
Ciss
Pout = 300W
1000
CAPACITANCE (pf)
22
GAIN (dB)
3000
Class AB
VDD = 125V
20
18
16
14
500
Coss
100
50
12
Crss
10
0
10
.1
.5
1
5
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
25
50
75
100
125
150
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
80
ID, DRAIN CURRENT (AMPERES)
10
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
8
6
4
2
0
0
TJ = +25°C
TJ = +125°C
DATA FOR BOTH SIDES
IN PARALLEL
ID, DRAIN CURRENT (AMPERES)
050-4920 Rev
C
6-2003
12
1ms
10
5
1
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
100us
OPERATION HERE
LIMITED BY RDS (ON)
10ms
TC =+25°C
TJ =+200°C
SINGLE PULSE
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
100ms
DC
ARF473
25
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.0
0.8
0.6
0.4
0.2
20
VGS=15 & 10V
9V
15
8V
6V
5.5V
10
5V
5
4.5V
4V
0.0
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.02
0.005
0.01
Note:
PDM
t1
t2
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
10
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
Zin (Ω)
ZOL (Ω)
27.12
40.68
63.8
81.36
127.4
4.78 - j 14.3
1.96 - j 9
0.59 - j 4.1
0.31 - j 1.65
0.4 + j 2.66
49 - j 38.8
33.6 - j 39.5
18 - j 33.5
12.3 - j 29
5.5 - j 20.3
Zin - Gate shunted with 100Ω
IDQ = 75 mA each side
ZOL - Conjugate of optimum load for 300 Watts output at Vdd = 125V
Input and output impedances are measured from gate to gate and
drain to drain respectively
6-2003
0.001
10-5
050-4920 Rev C
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.4
ARF473
81.36 MHz Test amplifier Po = 500W @130 V
L3
L1
Vg1
C6
C7
C10
TL3
R1
TL5
C3
T1
J1
C5
T2
TL1
C1
L2
C2
J2
TL2
C8
C9
+
130V
-
C4
R2
TL4
Vg2
TL6
C1 10-80 pF trimmer ARCO 462
C2-4 1000 pF NPO 500V chip
C5-C9 10 nF 500V chip
C10 .47 uF Ceramic 500V
L1 680 nH 12t #24 enam .312" dia
L2 55 nH 3t #18 enam .25" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH
R1-2 100 Ω 0.5 W
T1 4:1 RF transformer on two beads same as L3.
T2 1:1 coax balun. Fair-Rite 2643665902 bead
on 1.5" RG-303 50 Ω teflon coax.
TL1-2 Printed line L=1.2" w=.23"
TL3-4 Printed line L=.25" w=.23"
TL5-6 Printed line L=0.25" w=.23"
0.23" wide stripline on FR-4 board is ~32Ω Zo
DUT
Peak Output Power vs... Vdd
900
800
Max
Duty Cycle
700
1.2
Notes:
1
The value of L2 must be adjusted as the
supply voltage is changed to maintain
resonance in the output circuit. At 81 MHz its
value changes from approximately 50 nH at
100V to 70 nH at 165V.
0.8
600
500
Po Watts
400
0.6
0.4
300
200
0.2
100
0
The duty cycle past 100V must be reduced to
insure power dissipation is within the limits of
the device. Maximum pulse length should be
100mS or less. See figure 7.
0
80
100
120
140
160
Drain Supply Voltage Vdd
1.100
.435
1
HAZARDOUS MATERIAL
WARNING
2
0.390
0.400
5
0.200
3
4
.225
.005
.107
1.340
C
6-2003
.060
050-4920 Rev
Pin 1. Drain
2. Drain
3. Gate
.065 rad 2 PL
4. Gate
5. Source
Package Dimensions (inches)
.210
The ceramic portion of the
device between leads and
mounting flange is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
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