ARF450 Common Source Push-Pull Pair ARF450 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 11405 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. Specified 150 Volt, 81.36 MHz Characteristics: Output Power = 500 Watts. Gain = 13dB (Class C) Efficiency = 75% High Performance Push-Pull RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF450 VDSS Drain-Source Voltage 450 VDGO Drain-Gate Voltage 450 ID VGS PD TJ,TSTG TL UNIT Volts 11 Amps Gate-Source Voltage ±30 Volts Total Device Dissipation @ TC = 25°C 650 Watts Continuous Drain Current @ TC = 25°C -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 / VGS(TH) ∆VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 On State Drain Voltage 1 TYP MAX 5 (ID(ON) = 5.5A, VGS = 10V) 25 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 3 Forward Transconductance (VDS = 25V, ID = 5.5A) Forward Transconductance Ratio (VDS = 25V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 5.8 Volts µA nA mhos 0.9 1.1 3 5 0.1 Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA) UNIT Volts THERMAL CHARACTERISTICS Characteristic (per package unless otherwise noted) MIN RθJC Junction to Case (per section) RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) TYP MAX 0.54 0.1 UNIT °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA: 405 S.W. Columbia Street EUROPE: Chemin de Magret Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382 - 8028 FAX: (541) 388 -0364 Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-4910 Rev C 12-2000 Symbol DYNAMIC CHARACTERISTICS (per section) Symbol Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf GPS η ψ MIN TYP MAX 980 1200 87 120 f = 1 MHz 25 40 VGS = 15V 5 10 VDD = 0.5 VDSS 3.0 7 ID = ID[Cont.] @ 25°C 15 25 RG = 1.6 Ω 3 7 MAX VGS = 0V VDS = 150V Rise Time Turn-off Delay Time Fall Time FUNCTIONAL CHARACTERISTICS Symbol ARF450 UNIT pF ns (Push-Pull Configuration) Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81.36 MHz 12 13 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 150V Pout = 500W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per each transistor side unless otherwise specified. 30 25 500 CAPACITANCE (pf) 15 10 Ciss 1000 Pout = 150W 20 GAIN (dB) 3000 Class C VDD = 150V Coss 100 Crss 50 5 ID, DRAIN CURRENT (AMPERES) 050-4910 Rev C 12-2000 16 12 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 50 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 8 4 10 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) 0 30 10 100us OPERATION HERE LIMITED BY RDS (ON) 1ms 5 10ms 1 0.5 100ms TC =+25°C TJ =+200°C SINGLE PULSE 0.1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF450 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 20 VGS=8, 10 & 15V 6.5V 15 6V 10 5.5V 5 5V 4.5V 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 600 POUT, POWER OUT (WATTS) VGS = 0 VDD = 150V f = 81.36 MHz 450 Push-Pull 300 150 0 0 0 6 12 18 24 30 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 14 VGS = 0 VDD = 150V 12 f = 81.36 MHz Push-Pull 10 8 6 0 150 300 450 600 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out D=0.5 0.1 0.2 .05 0.1 0.05 Note: .01 .005 0.02 0.01 PDM SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC .001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class C Large Signal Input-Output Impedance (per section) Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 80.0 100.0 Z in (Ω) 23.00 - j 7.0 4.30 - j 9.1 1.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 Z OL (Ω) 93.0 - j 10 63.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 22 5.1 - j 16 3.4 - j 12 Z in - gate shunted by 25Ω Z OL - conjugate of optimum load impedance for 150W at 150V 050-4910 Rev C 12-2000 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.6 L3 R1 100 TL1 C5 L1 C7 C1 75-380 pF ARCO 465 C2 25-115 pF ARCO 462 C3 -C5 2 nF NPO 500V chip C6 10 nF 500V chip C7 .47 uF Ceramic 500V L1-L2 50 nH 3t # 14 ga .3" dia L3-L4 .68 uH 12t #24 enam L5 2t #20 on bead approx 2 uH R1-R2 100 ohm 1 W T1 9:1 RF transformer T2 1:1 coax balun TL1-TL2 Printed line 1" long C3 T1 J1 C6 ARF450 + 150V - L5 J2 C1 TL2 C2 T2 L2 R2 100 C4 DUT 81.36 MHz Test Circuit L4 R1 6.8K + 80 V - + + Bias 0-6V R4 10K - C3 .47 C2 10n C1 1 T1 L3 J2 C6 50p DUT T1 9:1 RF Transformer on type 43 beads T2 4:1 RF Transformer. Made from two pieces of 25 ohm semi-rigid coax with type 43 ferrite bead loading. R8 20 10W J1 C4 .1 C5 1n 30 MHz Linear Test Circuit T2 .875 Typical Mounting .176 HAZARDOUS MATERIAL WARNING 1 .375 1 yyyy ;;;; yy ;; ARF450 BeO 3 ARF450 6 5,8 7 .582 BeO 11405 1,4 11405 8 2 Clamp .062 8 .375 .125 .210 .210 .060 typ. .125 Heat Sink dims: inches Thermal Considerations and Package Mounting: The rated 650W power dissipation is only available when the package mounting surface is at 25˚C and the junction temperature is 200˚C. The thermal resistance between junctions and case mounting surface is 0.27 ˚C/W. When installed, an additional thermal impedance of 0.05 ˚C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint com- 050-4910 Rev C 12-2000 Compliant layer ARF 450 .005 USA: 405 S.W. Columbia Street EUROPE: Chemin de Magret The ceramic portion of the device between leads and mounting surface is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. pound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. An L-clamp, a compliant layer of plastic or rubber, and a 6-32 (M3.5) screw can provide the minimum 35 lb required mounting force. T = 4 in-lb. Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382 - 8028 FAX: (541) 388 -0364 Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61