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2
2
3
3
1
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27
2
T-
4
SO
4
Parallel
APT2X101S20J
"UL Recognized"
APT2X101S20J
200V 120A
file # E145592
ISOTOP fi
DUAL DIE ISOTOP® PACKAGE
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Rectifiers in Switchmode Power
•
•
•
•
•
•
•
•
•
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular SOT-227 Package
Rugged Avalanche Energy Rated
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
Supplies (SMPS)
• Free Wheeling Diode in
Low Voltage Converters
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
Characteristic / Test Conditions
APT2X101S20J
UNIT
200
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5)
120
IF(RMS)
RMS Forward Current (Square wave, 50% duty)
213
IFSM
TJ,TSTG
EAVL
Amps
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Operating and StorageTemperature Range
Avalanche Energy (2A, 50mH)
-55 to 150
°C
100
mJ
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
TYP
MAX
IF = 100A
.89
.95
IF = 200A
1.06
IF = 100A, TJ = 125°C
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Volts
.76
VR = 200V
2
VR = 200V, TJ = 125°C
Microsemi Website - http://www.microsemi.com
UNIT
40
470
mA
7-2006
VF
MIN
pF
053-6023 Rev C
Symbol
DYNAMIC CHARACTERISTICS
APT2X101S20J
Characteristic
Symbol
Test Conditions
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
MIN
TYP
-
70
ns
-
240
nC
-
6
-
110
ns
-
690
nC
-
11
-
95
ns
-
1750
nC
-
32
Amps
MIN
TYP
IF = 100A, diF/dt = -200A/µs
VR = 133V, TC = 25°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 100A, diF/dt = -200A/µs
VR = 133V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 100A, diF/dt = -700A/µs
VR = 133V, TC = 125°C
Maximum Reverse Recovery Current
MAX
-
-
UNIT
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
VIsolation
WT
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
UNIT
.33
°C/W
Volts
2500
Package Weight
Torque
MAX
1.03
oz
29.2
g
Maximum Terminal & Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.30
0.25
0.7
0.20
0.5
Note:
PDM
0.15
0.3
0.10
0
0.1
SINGLE PULSE
0.05
10-5
Duty Factor D = t1/t2
10-4
10-3
Peak TJ = PDM x ZθJC + TC
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2006
TJ ( C)
053-6023 Rev C
t1
t2
0.05
TC ( C)
0.0673
0.188
0.0743
Dissipated Power
(Watts)
0.0182
0.361
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.35
5.17
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
180
TJ = 25°C
TJ = 125°C
60
0
TJ = 150°C
0
2000
130A
100A
1000
50A
500
0
60
40
20
0
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
0
130A
30
25
20
100A
15
50A
10
5
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.2
250
Duty cycle = 0.5
TJ = 150°C
Qrr
t rr
1.0
t rr
200
I RRM
0.8
Qrr
0.6
IF(AV) (A)
150
100
0.4
50
0.2
0.0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
75
100
125
150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
6000
50
200
100
PEAK AVALANCHE CURRENT
(A)
5000
4000
3000
2000
1000
0
25
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
50
10
7-2006
Kf, DYNAMIC PARAMETERS
(Normalized to 700A/µs)
TJ = 125°C
VR = 133V
35
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
CJ, JUNCTION CAPACITANCE
(pF)
TJ = 125°C
VR = 133V
40
TJ = 125°C
VR = 133V
1500
80
TJ = -55°C
0.5
1.0
1.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
130A
50A
5
1
1
10
100
1000 2500
Time in Avalanche (µs)
Figure 9. Single Pulse UIS SOA
053-6023 Rev C
Qrr, REVERSE RECOVERY CHARGE
(nC)
2500
trr, REVERSE RECOVERY TIME
(ns)
240
100A
100
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
300
120
APT2X101S20J
120
360
APT2X101S20J
Vr
diF /dt Adjust
+18V
APT20M20LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
053-6023 Rev C
7-2006
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Parallel
APT2X101S20J
Cathode 1
Anode 1
Cathode 2
Anode 2
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV.
0.25 IRRM