1N6392 Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Rectifier Available on commercial versions Qualified per MIL-PRF-19500/554 DESCRIPTION This schottky barrier diode provides low forward voltage and offers military grade qualifications for high-reliability applications. This rugged DO-213AA rectifier is ideal for extreme environments. It is applicable as a free-wheeling diode, for reverse battery protection, and power supplies and converters. Important: For the latest information, visit our website http://www.microsemi.com. DO-213AA (DO-5) Package FEATURES • • • • • Internal solder bond construction. Hermetically sealed (welded). 1000 Amps surge rating. JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/554. RoHS compliant devices available by adding “e3” suffix (commercial grade only). APPLICATIONS / BENEFITS • • • Metal and glass construction. Reverse energy tested. Fast recovery. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Case Reverse Voltage, Repetitive Peak and (1) Working Peak Reverse Voltage Reverse Voltage, Nonrepetitive Peak (1) Reverse Voltage Surge Peak Forward Current @ 8.3 ms half-sine wave Average Forward Current 50% duty cycle square wave (2) @ T C = +115 ºC (3) Average Rectified Output Current @ T C = +115 ºC Solder Pad Temperature @ 10 s Symbol T J and T STG R ӨJC V RRM and V RWM Value -55 to +175 1.0 45 Unit o C o C/W V V RSM VR I FSM I FM 54 45 1000 60 V V A IO 54 260 A ºC A NOTES: 1. Full rated V RRM and V RWM with 50% duty cycle is applicable over the range of T C = –55°C to +173°C for I FM = 0. Full rated continuous V R (dc) is applicable over the temperature range of T C = –55 to +166°C. When V R = 45 V and T C = +166°C, then T J = 175 °C. 2. Average current with a 50 percent duty cycle square wave including reverse amplitude equal to the magnitude of full rated V RWM . (See Figure 4) 3. Average current with an applied sine wave peak value equal to the magnitude of full rated V RWM . For temperature-current derating curves, see Figure 4. T4-LDS-0053, Rev. 3 (5/31/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 6 1N6392 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed metal and glass case body. TERMINALS: Tin-lead plated or RoHS compliant matte-tin (commercial grade only) on nickel. MARKING: Part number. POLARITY: Cathode to stud. MOUNTING HARDWARE: Nut, flat steel washer and lock washer available upon request. WEIGHT: Approximately 14 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6392 e3 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol f I FM I FSM IO V FM VR V RRM V RSM V RWM Frequency Forward Current: The current flowing from the external circuit into the anode terminal. Also see first page ratings and test conditions for I FM with 50% duty cycle square wave. Surge Peak Forward Current: The forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref JESD282-B). Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Repetitive Peak Reverse Voltage: The peak reverse voltage including all repetitive transient voltages but excluding all non-repetitive transient voltages. Non-Repetitive Peak Inverse Voltage: The peak reverse voltage including all non-repetitive transient voltages but excluding all repetitive transient voltages. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. T4-LDS-0053, Rev. 3 (5/31/13) ©2013 Microsemi Corporation Page 2 of 6 1N6392 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Forward Voltage I FM = 120 A, T C = 25 °C * I FM = 60 A, T C = 25 °C * I FM = 10 A, T C = 25 °C * Reverse Current Leakage V RM = 45 V, T J = 25 °C V RM = 45 V, T J = 175 °C * V RM = 45 V, T J = 125 °C * V RM = 45 V, T C = -55 °C * Symbol V FM I RM Junction Capacitance V R = 5 V, f = 1 MHz, 100 KHz ≤ f ≤ 1 MHz CJ Min. Max. 0.82 0.68 0.51 2.0 200 60 400 3000 Typ. Unit V mA pF *Pulse test: pulse width 300 µsec, duty cycle 2% T4-LDS-0053, Rev. 3 (5/31/13) ©2013 Microsemi Corporation Page 3 of 6 1N6392 Instantaneous Forward Current - Amperes GRAPHS Instantaneous Forward Voltage – Volts Typical Reverse Current - mA FIGURE 1 Typical Forward Characteristics Reverse Voltage – Volts FIGURE 2 Typical Reverse Characteristics T4-LDS-0053, Rev. 3 (5/31/13) ©2013 Microsemi Corporation Page 4 of 6 1N6392 Junction Capacitance - pF GRAPHS Reverse Voltage – Volts Sinewave Operation Maximum Io Rating (A) FIGURE 3 Typical Junction Capacitance T C and T J (ºC) (Infinite Sink) FIGURE 4 Temperature Current Derating Curve (Derate design curve constrained by the maximum rated junction temperature (T J ≤ 175°C) and current rating specified. Derate design curves chosen at T J ≤ 150 °C, 125 °C, and 110 °C to show current rating where most users want to limit T J in their application.) T4-LDS-0053, Rev. 3 (5/31/13) ©2013 Microsemi Corporation Page 5 of 6 1N6392 PACKAGE DIMENSIONS Ltr C Dimensions Inch Millimeters Min Max Min Max 0.375 9.53 - C1 0.025 0.080 0.64 2.03 CD 0.667 0.450 - 16.94 CH - HF 0.669 0.688 17.00 17.48 HT1 0.115 0.200 2.92 5.08 HT2 0.060 - 1.52 - 0.750 1.00 19.05 25.40 SD - - - - SL 0.422 0.453 10.72 11.51 SU UD ΦT - 0.090 0.249 0.175 - 2.29 6.32 4.45 5.59 3.56 7 11.43 OAH 0.220 0.140 Notes 6 5 4 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. Dimensions are in inches. Millimeters are given for information only. Units must not be damaged by torque of 30 inch-pound applied to .25-28 UNF-2B nut assembled on thread. Length of incomplete or undercut threads of UD. Maximum pitch diameter of plated threads shall be basic pitch diameter 0.2268 inch (5.76 mm) reference (FED-STD-H28, “Screw-Thread Standards for Federal Services”). A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane 0.600 inch (15.24 mm). The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimensions C and C1 shall be flat and the minimum cross-sectional area from the hole to any point on 2 2 the periphery shall be 0.0025 in (1.59 mm ). In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0053, Rev. 3 (5/31/13) ©2013 Microsemi Corporation Page 6 of 6