7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3583 APPLICATIONS: • • • Off-Line Inverters Switching Regulators Motor Controls • • • Deflection Circuits DC-DC Converters High Voltage Amplifiers • • High Current: 2 Amps Low VCE (SAT) FEATURES: • • • High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts 5 Amp, 250V, High Voltage NPN Silicon Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-66 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCBO* VCEO* VCER* VEBO* IC* IC* IB* TSTG* TJ* * PT* θ * JC CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage RBE = 50Ω Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from Case for 10 Sec. Power Dissipation TC = 25° C Thermal Impedance Indicates JEDEC registered data. MSC1055.PDF 05-19-99 VALUE UNITS 250 175 250 6 5 1 1 -65 to 200 -65 to 200 235 Volts Volts Volts Volts Amps Amps Amps °C °C °C 35 5.0 Watts ° C/W 2N3583 ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL CHARACTERISTIC VCEO(sus)* IC = 0.2 Amp (Notes 1 and 2) IC = 0.2A, RBE = 50Ω (Notes 1 and 2) 250 ---- Volts VCE = 225V, VBE = -1.5V ---- 1.0 mA. VCE = 225V, VBE = -1.5V ---- 3.0 mA. ICEO* Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current TC = 150° C Collector Cutoff Current VALUE Min. Max. 175 ---- VCE = 150V, IB = 0 ---- 10 mA. IEB0* Emitter Cutoff Current VEB = 6V, IC = 0 ---- 5.0 mA. hFE* DC Forward Current Transfer Ratio (Note 1) IC = 0.1A, VCE = 10V IC = 0.5A, VCE = 10V IC = 1.0A, VCE = 10V IC = 0.1A IB = 0.125A 40 40 10 ---- ---200 ---5 ---------Volts IC = 1.0A, IB = 0.10A ---- 1.4 Volts 0.35 ---- A VEB = 4V, RBE = 20Ω , L = 100µ h 50 ---- µJ VCE = 30V, IC = 0.1A, f = 1 KHz VCE = 10V, IC = 0.2A, f = 5 KHz 25 3 350 ---- ------- VCE = 10V, IC = 0.2A 2.0 ---- ---- VCB = 10V, IE = 0, f = 1.0MHz ---- 120 pf VCER(sus) ICEV* ICEV* VCE(sat)* Collector-Emitter Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage (Note 1) Second-Breakdown Collector Current (with base forward biased) Second-Breakdown Energy (with base reverse biased) Common-Emitter SmallSignal Forward Current Transfer Ratio Common-Emitter SmallSignal Forward Current Transfer Ratio, f = 5 MHz Collector-Base Capacitance IS/b ES/b hfe* I hfe I* COb TEST CONDITIONS VCE = 100V, t = 1.0sec. Note 1: Pulse Test: Pulse width = 300µ Sec., Rep. Rate 60Hz. Note 2: Caution - Do not use Curve Tracer. * Indicates JEDEC registered data. MSC1055.PDF 05-19-99 Units Volts 2N3583 PACKAGE MECHANICAL DATA: R.145 [3.68] MAX .620 [15.75] MAX .050 [1.27] .075 [1.91] .360 [9.14] MIN SEATING PLANE .095 [2.41] .105 [2.67] .470 [11.94] .500 [12.70] .958 [24.33] .962 [24.43] 2 .050 [1.27] MAX .142 [3.61] .152 [3.86] .250 [6.35] .340 [8.64] R.350 [8.89] MAX NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC1055.PDF 05-19-99 1 .570 [14.48] .590 [14.99] .190 [4.83] .210 [5.33] .028 [0.71] .034 [0.86]