LX5553 ® TM 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION provides about 25dB power gain, and +17dBm linear output power, with EVM (<3%) for 64QAM/ 54Mbps OFDM. Both gain and power are readily measured at antenna port, with the insertion loss of the SP3T switch included. The Rx path of LX5553 features 13dB small-signal gain, noise figure of 2.1dB, and high input referred thirdorder harmonic intercept point (IIP3) of +5dBm, including the SP3T switch loss. The LNA consumes about 11mA current with a single 3.6V supply. The Bluetooth path of LX5553 features low insertion loss of 0.9dB and high input referred 1dB gain compression point (IP1dB) of +29dBm. LX5553 is available in a 16-pin, low profile of 0.55mm, 3x3mm2 micro-lead package (MLPQ-16L) in very low profile of 0.55mm. With its high level of functional integration, best-class performance, compact footprint and low profile, LX5553 offers an ideal frontend solution for the ever demanding design requirements of today’s highly integrated mobile equipments, including 802.11b/g/n and Bluetooth applications. 2.4-2.5GHz 802.11b/g/n FrontEnd Solution in a Single MLP Package SP3T for Sharing Antenna between WLAN and Bluetooth systems All RF I/O Matched to 50 Single-Supply Voltage 3.0V to 4.2V 2 Small Footprint: 3x3mm Low Profile: 0.55mm RoHS Compliant & Pb-Free W W W. Microsemi .CO M LX5553 is a high-integration, highperformance WLAN front-end module (FEM) for 802.11b/g/n and other applications in the 2.4-2.5GHz frequency range. LX5553 integrates an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) power amplifier with on chip impedance matching, a fully matched low noise amplifier based on InGaAs Enhancement mode pseudo-morphic high electron mobility transistor (EpHEMT) technology, and a Depletion mode pHEMT (D-pHEMT) singlepole triple-throw (SP3T) switch, all into a single package with 3x3mm footprint. LX5553 provides capability of sharing a single antenna between WLAN and Bluetooth systems through the SP3T switch. The Tx path of LX5553 features a two-stage monolithic microwave integrated circuit (MMIC) power amplifier with active bias circuitry, on-chip output power detector, and 50 input/output matching inside the package. With 3.6V supply voltage and 82mA bias current, the Tx path TX Features : Power Gain ~ 25 dB* Pout ~ +17 dBm* for 3% EVM at Antenna Current ~145 mA at +17 dBm* Pout ~ +21 dBm* for 11b 1Mbps DSSS Mask Compliance Quiescent Current ~ 82 mA RX Features : Gain ~ 13 dB* Noise Figure ~ 2.1 dB* IIP3 ~ +5 dBm* Bluetooth Path : Insertion Loss ~ 0.9 dB IP1dB ~ +29 dBm * Including SP3T switch loss IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPLICATIONS IEEE 802.11b/g/n Mobile Phone WLAN module BLOCK DIAGRAM PAOut/ SwIn Vc2 Vref Vc1 IMN* OMN* PA LX5553 TxIn Det LNAOut Antenna Port LNA Vdd BT *IMN: Input Matching Network *OMN: Output Matching Network Copyright 2010 Rev. 1.0, 2010-03-18 CtrlTx / CtrlRx / CtrlBT Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5553 ® TM 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch P RODUCTION D ATA S HEET PRODUCT HIGHLIGHT W W W. Microsemi .CO M MSC 5553 5552 818A 845A PACKAGE ORDER INFO Plastic MLPQ 16 pin 3x3mm RoHS Compliant /Pb-Free LU LX5553LU Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5553LU-TR) ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT DC Supply Voltage, RF off................................................................................5V Collector Current (PA)................................................................................500mA Drain Current (LNA) ....................................................................................40mA Total Power Dissipation....................................................................................2W RF Input Power (TxIn) ............................................................................+10 dBm RF Input Power (Ant, SwIn, BT) ............................................................+25 dBm Maximum Junction Temperature (Tj max) ................................................ +150°C Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature ....................................................................-65°C to +150°C RoHS/Pb-Free Peak Package Temp. for Solder Reflow (40 seconds maximum exposure)................................................... 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. TxIn NC Vc1 Vc2 16 Vcc 15 14 1 13 12 PAOut Vref 2 11 SwIn Det 3 10 CtrlRx LNAOut 4 9 CtrlTx GND 5 6 7 8 Vdd BT CtrlBT Ant LQ PACKAGE (“See-Through” View from Top) RoHS/Pb-free 100% Matte Tin Lead finish THERMAL DATA PACKAGE DATA LU Plastic MLPQ 16-Pin THERMAL RESISTANCE-JUNCTION TO CASE, JC THERMAL RESISTANCE-JUNCTION TO AMBIENT, JA 10 C/W 50 C/W Junction Temperature Calculation: TJ = TA + (PD x JA). The JA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. Copyright 2010 Rev. 1.0, 2010-03-18 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5553 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch ® TM P RODUCTION D ATA S HEET ® Thank you for your interest in Microsemi Analog Mixed Signal products. W W W. Microsemi .CO M The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or Contact us directly by sending an email to: [email protected] Be sure to specify the data sheet you are requesting and include your company name and contact information and or vcard. We look forward to hearing from you. Copyright 2010 Rev. 1.0, 2010-03-18 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3