PHILIPS PHN1013

DISCRETE SEMICONDUCTORS
DATA SHEET
PHN1013
N-channel enhancement mode
MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1997 Jun 20
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
FEATURES
DESCRIPTION
• Very low on-state resistance.
N-channel enhancement mode logic level field-effect
power transistor using ‘trench’ technology, in an 8-pin
plastic SOT96-1 (SO8) package.
APPLICATIONS
• DC to DC converters
• General purpose switching applications.
PINNING - SOT96-1 (SO8)
handbook, halfpage
SYMBOL
DESCRIPTION
1
s
source
2
s
source
3
s
source
1
4
g
gate
Top view
5
d
drain
6
d
drain
7
d
drain
8
d
drain
d
5
8
PIN
g
4
s
MAM358
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
drain-source voltage
30
V
ID
drain current (DC)
10
A
Ptot
total power dissipation
2.5
W
RDSon
drain-source on-state resistance
13.5
mΩ
Tj
junction temperature
150
°C
VGS = 10 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage
CONDITIONS
MIN.
MAX.
UNIT
−
30
−
30
V
−
±20
V
Tamb = 25 °C; tp ≤ 10 s
−
10
A
V
VDG
drain-gate voltage
VGS
gate-source voltage
ID
drain current (DC)
Tamb = 70 °C; tp ≤ 10 s
−
8
A
IDM
peak drain current
Tamb = 25 °C
−
50
A
Ptot
total power dissipation
Tamb = 25 °C
−
2.5
W
Tamb = 70 °C
−
1.6
W
RGS = 20 kΩ
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
1997 Jun 20
2
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
MAX.
UNIT
50
K/W
minimum footprint; tp ≤ 10 s; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 250 µA
VGSth
gate-source threshold voltage
IDSS
drain-source leakage current
MIN.
TYP.
MAX.
UNIT
30
−
−
V
VGS = 0; ID = 250 µA; Tj = −55 °C
27
−
−
V
VDS = VGS ; ID = 250 µA
2.1
3
4
V
VDS = VGS ; ID = 250 µA; Tj = 150 °C
1.4
−
−
V
VDS = VGS ; ID = 250 µA; Tj = −55 °C
−
−
4.4
V
VDS = 30 V; VGS = 0
−
0.05
10
µA
VDS = 30 V; VGS = 0; Tj = 150 °C
−
−
500
µA
VGS = ±10 V; VDS = 0
−
10
100
nA
IGSS
gate leakage current
RDSon
drain-source on-state resistance VGS = 10 V; ID = 10 A
VGS = 10 V; ID = 10 A; Tj = 150 °C
−
11
13.5
mΩ
−
−
26
mΩ
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
gfs
forward transconductance
VDS = 25 V; ID = 10 A
4
8
−
S
Ciss
input capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
−
1700
2200
pF
Coss
output capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
−
325
450
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
−
214
260
pF
QG
total gate charge
VGS = 5 V; VDD = 24 V; ID = 10 A
−
27
−
nC
QGS
gate-source charge
VGS = 5 V; VDD = 24 V; ID = 10 A
−
3.5
−
nC
QGD
gate-drain charge
VGS = 5 V; VDD = 24 V; ID = 10 A
−
15
−
nC
Switching times
td(on)
turn-on delay time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
−
25
40
ns
td(off)
turn-off delay time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
−
90
130
ns
tr
rise time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
−
75
125
ns
tf
fall time
VGS = 5 V; VDD = 25 V; ID = 10 A;
Rgen = 10 Ω resistive load
−
35
50
ns
1997 Jun 20
3
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IDR
continuous reverse drain current
IDRM
pulsed reverse drain current
VSD
source-drain diode forward voltage
CONDITIONS
Tamb = 25 °C; tp ≤ 10 s
TYP.
MAX.
UNIT
−
10
A
−
50
A
IF = 10 A; VGS = 0
0.95
1.2
V
IF = 50 A; VGS = 0
1
−
V
trr
reverse recovery time
IF = 10 A; di/dt = −100 A/µs;
VGS = −10 V; VR = 25 V
50
−
ns
Qrr
reverse recovery charge
IF = 10 A; di/dt = −100 A/µs;
VGS = −10 V; VR = 25 V
0.1
−
µC
1997 Jun 20
4
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.244
0.039 0.028
0.050
0.041
0.228
0.016 0.024
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03S
MS-012AA
1997 Jun 20
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
97-05-22
5
o
8
0o
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 20
6
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
NOTES
1997 Jun 20
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/01/pp8
Date of release: 1997 Jun 20
Document order number:
9397 750 02452