PESD5V0S1BA; PESD5V0S1BB; PESD5V0S1BL Low capacitance bidirectional ESD protection diodes Rev. 03 — 17 December 2004 Product data sheet 1. Product profile 1.1 General description Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients. Table 1: Product overview Type number Package Philips JEITA PESD5V0S1BA SOD323 SC-76 PESD5V0S1BB SOD523 SC-79 PESD5V0S1BL SOD882 - 1.2 Features ■ ■ ■ ■ Bidirectional ESD protection of one line Max. peak pulse power: PPP = 130 W Low clamping voltage: V(CL)R = 14 V Ultra low leakage current: IRM = 5 nA ■ ■ ■ ■ ESD protection > 30 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 12 A Ultra small SMD plastic packages 1.3 Applications ■ Cellular handsets and accessories ■ Portable electronics ■ Computers and peripherals ■ Communication systems ■ Audio and video equipment 1.4 Quick reference data Table 2: Quick reference data Symbol Parameter VRWM reverse stand-off voltage Cd diode capacitance Conditions VR = 0 V; f = 1 MHz Min Typ Max Unit - - 5 V - 35 45 pF PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 2. Pinning information Table 3: Pinning Pin Description Simplified outline Symbol SOD323, SOD523 1 cathode 1 2 cathode 2 1 2 1 2 sym045 001aab540 SOD882 1 cathode 1 2 cathode 2 1 1 2 2 sym045 Transparent top view 3. Ordering information Table 4: Ordering information Type number Package Name Description Version PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323 PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523 PESD5V0S1BL - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 4. Marking Table 5: Marking codes Type number Marking code PESD5V0S1BA E6 PESD5V0S1BB L7 PESD5V0S1BL F1 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 2 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max PPP peak pulse power 8/20 µs IPP peak pulse current 8/20 µs Tj Unit [1] [2] - 130 W [1] [2] - 12 A junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Per diode [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measured from pin 1 to pin 2. Table 7: ESD maximum ratings Symbol Parameter ESD Conditions electrostatic discharge capability IEC 61000-4-2 (contact discharge) [1] [2] HBM MIL-Std 883 Max Unit - 30 kV - 10 kV [1] Measured from pin 1 to pin 2. [2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. Table 8: ESD standards compliance ESD Standard Conditions IEC 61000-4-2, level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact) HBM MIL-STD 883; class 3 > 4 kV 9397 750 14036 Product data sheet Min © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 3 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 001aaa191 mle218 120 Ipp 100 % 90 % 100 % Ipp; 8 µs Ipp (%) 80 e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 10 20 30 40 t (µs) 60 ns Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 9397 750 14036 Product data sheet t 30 ns © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 4 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 6. Characteristics Table 9: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 5 100 nA Per diode VRWM reverse stand-off voltage IRM reverse leakage current VRWM = 5 V; see Figure 6 V(CL)R clamping voltage IPP = 1 A [1] [2] - - 10 V IPP = 12 A [1] [2] - - 14 V V(BR) breakdown voltage IR = 1 mA 5.5 - 9.5 V rdif differential resistance IR = 1 mA - - 50 Ω Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 - 35 45 pF [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measures from pin 1 to pin 2. 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 5 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 001aaa202 103 001aaa193 1.2 Ppp Ppp(25˚C) Ppp (W) 0.8 102 0.4 10 1 102 10 103 104 0 0 50 100 150 t p (µs) 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power dissipation as a function of exponential time duration tp; typical values 001aaa203 38 Cd (pF) Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa204 102 IRM(Tj) IRM(Tj =85°C) 34 10 30 1 26 10−1 22 0 1 2 3 4 5 75 VR (V) 100 125 Tj (°C) 150 Tamb = 25 °C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 6 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ PESD5V0S1Bx IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 006aaa056 Fig 7. ESD clamping test set-up and waveforms 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 7 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 7. Application information PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may be used on lines where the signal polarities are above and below ground. They provide a surge capability of up to 130 W per line for a 8/20 µs waveform. signal line PESD5V0S1Bx GND 006aaa057 Fig 8. Bidirectional protection of one signal line. Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protection conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 8 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 8. Package outline Plastic surface mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC SOD323 JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 99-09-13 03-12-17 Fig 9. Package outline SOD323 (SC-76) 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 9 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes Plastic surface mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC SOD523 JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25 02-12-13 Fig 10. Package outline SOD523 (SC-79) 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 10 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm L SOD882 L 1 2 b e1 A A1 E D (2) 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b D E e1 L mm 0.50 0.46 0.03 0.55 0.47 0.62 0.55 1.02 0.95 0.65 0.30 0.22 Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17 SOD882 Fig 11. Package outline SOD882 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 11 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 9. Packing information Table 10: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 3000 10000 PESD5V0S1BA SOD323 4 mm pitch, 8 mm tape and reel -115 -135 PESD5V0S1BB SOD523 4 mm pitch, 8 mm tape and reel -115 -135 PESD5V0S1BL SOD882 4 mm pitch, 8 mm tape and reel - -315 [1] For further information and the availability of packing methods, see Section 14. 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 12 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 10. Revision history Table 11: Revision history Document ID Release date Data sheet status Change notice Doc. number PESD5V0S1BA_BB_BL_3 20041217 Modifications: • • • • Product data sheet - Supersedes 9397 750 14036 PESD5V0S1BA_BB_ BL_2 Table 1 Product overview added Figure 1 Figure title amended Table 9 Symbol for differential resistance amended to rdif Figure 5 Axis description changed from VBR to VR and figure title amended PESD5V0S1BA_BB_BL_2 20040802 Product data sheet - 9397 750 13514 PESD5V0S1BA_1 PESD5V0S1BB_1 PESD5V0S1BA_1 20040322 Product specification - 9397 750 12256 - PESD5V0S1BB_1 20040304 Product specification - 9397 750 12257 - 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 13 of 15 PESD5V0S1BA/BB/BL Philips Semiconductors Low capacitance bidirectional ESD protection diodes 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14036 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 17 December 2004 14 of 15 Philips Semiconductors PESD5V0S1BA/BB/BL Low capacitance bidirectional ESD protection diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information . . . . . . . . . . . . . . . . . . . . 14 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 December 2004 Document number: 9397 750 14036 Published in The Netherlands