TC75S55F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S55F,TC75S55FU,TC75S55FE Single Operational Amplifier The TC75S55F/TC75S55FU/TC75S55FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. TC75S55F Features • Low-voltage operation : VDD = ±0.9~3.5 V or 1.8~7 V • Low-current power supply : IDD (VDD = 3 V) = 10 μA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • TC75S55FU Ultra-compact package TC75S55FE Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Power dissipation TC75S55F/FU TC75S55FE Symbol Rating Unit VDD, VSS 7 V DVIN ±7 V VIN VDD~VSS V PD 200 Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) mW 100 Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC75S55F/FU/FE Marking (top view) 5 Pin Connection (top view) 4 VDD OUT 5 4 SF 1 2 1 IN (+) 3 2 VSS 3 IN (−) Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO ⎯ II Characteristics Input bias current Common mode input voltage Test Condition Min Typ. Max Unit ⎯ 2 10 mV ⎯ ⎯ 1 ⎯ pA ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN 2 ⎯ 0.0 ⎯ 2.1 V dB RS = 10 kΩ GV ⎯ 60 70 ⎯ VOH 3 RL > = 1 MΩ 2.9 ⎯ ⎯ VOL 4 RL > = 1 MΩ ⎯ ⎯ 0.1 Common mode input signal Rejection Ratio CMRR 2 VIN = 0.0~2.1 V 60 70 ⎯ Supply voltage rejection ratio Voltage gain (open loop) Maximum output voltage ⎯ V dB SVRR 1 VDD = 1.8~7.0 V 60 70 ⎯ dB Supply current IDD 5 ⎯ ⎯ 10 20 μA Source current Isource 6 ⎯ 10 20 ⎯ μA Isink 7 ⎯ 100 450 ⎯ μA Min Typ. Max Unit ⎯ 2 10 mV Sink current DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA II ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN 2 ⎯ 0.0 ⎯ 0.9 V GV ⎯ ⎯ dB Characteristics Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage VOH VOL Test Condition RS = 100 kΩ 60 70 ⎯ 3 RL > = 1 MΩ 1.7 ⎯ ⎯ 4 RL > = 1 MΩ ⎯ ⎯ 0.1 V Supply current IDD 5 ⎯ ⎯ 8 16 μA Source current Isource 6 ⎯ 8 16 ⎯ μA Isink 7 ⎯ 100 400 ⎯ μA Sink current 2 2007-11-01 TC75S55F/FU/FE AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 0.08 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 160 ⎯ kHz Characteristics AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 0.06 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 140 ⎯ kHz Characteristics Test Circuit 1. SVRR, VIO • VDD RF RS SVRR For each of the two VDD values, measure the VOUT value, as indicated below, and calculate the value of SVRR using the equation shown. When VDD = 1.8 V, VDD = VDD1 and VOUT = VOUT1 When VDD = 7.0 V, VDD = VDD2 and VOUT = VOUT2 VOUT ⎛ V 1 − V OUT 2 RS SVRR = 20 log ⎜ OUT × ⎜ V 1− V 2 RF + RS DD DD ⎝ RF RS • VDD/2 ⎞ ⎟ ⎟ ⎠ VIO Measure the value of VOUT and calculate the value of VIO using the following equation. ⎛ RS VDD ⎞ ⎟× VIO = ⎜⎜ V OUT − 2 ⎟⎠ RF + RS ⎝ 2. CMRR, CMVIN • VDD RF RS CMRR Measure the VOUT value, as indicated below, and calculate the value of the CMRR using the equation shown. When VIN = 0.0 V, VIN = VIN1 and VOUT = VOUT1 When VIN = 2.1 V, VIN = VIN2 and VOUT = VOUT2 ⎛ V 1 − V OUT 2 RS CMRR = 20 log ⎜ OUT × ⎜ RF + RS 1 − VIN 2 V IN ⎝ VOUT RS RF VIN ⎞ ⎟ ⎟ ⎠ VDD/2 • CMVIN Input range within which the CMRR specification guarantees VOUT value (as varied by the VIN value). 3 2007-11-01 TC75S55F/FU/FE 3. VOH VDD • VOH VDD − 0.05 V 2 VIN2 = VDD + 0.05 V 2 RL VOH VIN1 = VIN1 VIN2 4. VOL VDD VOL VIN1 = VDD + 0.05 V 2 VIN2 = VDD − 0.05 V 2 RL • VOL VIN1 VIN2 5. IDD VDD M IDD VDD/2 6. Isource 7. Isink VDD VDD M M 4 2007-11-01 TC75S55F/FU/FE IDD – VDD GV – f 120 VSS = GND VIN = VDD/2 Ta = 25°C GV (dB) 16 12 Voltage gain Supply current IDD (μA) 20 8 VDD = 3 V VSS = GND Ta = 25°C 80 40 4 0 0 1 2 3 Supply voltage 4 5 VDD (V) 6 0 10 7 100 1k 10 k Frequency f 100 k 1M (Hz) VOL – Isink Isink – VDD 1000 2.0 VDD = 1.8 V VSS = GND Ta = 25°C VOL (V) VSS = GND Ta = 25°C Low-level output voltage Sink current Isink (μA) 800 600 400 200 0 0 1 2 3 Supply voltage 4 5 VDD (V) 6 1.6 1.2 0.8 0.4 0 0 7 200 5 VOL (V) VSS = GND Ta = 25°C 2 Low-level output voltage VOL (V) VDD = 3.0 V 1 200 400 Sink current Isink 600 800 (μA) VOL – Isink VOL – Isink Low-level output voltage 400 Sink current Isink 3 0 0 10 M 600 4 3 2 1 0 0 800 (μA) VDD = 5.0 V VSS = GND Ta = 25°C 200 400 Sink current Isink 5 600 800 (μA) 2007-11-01 TC75S55F/FU/FE Isource – VDD VOH – Isource 50 2.0 40 High-level output voltage VOH Source current Isource (μA) Ta = 25°C 30 20 10 0 0 1 3 2 Supply voltage 4 5 VDD (V) VDD = 1.8 V VSS = GND Ta = 25°C (V) VSS = GND 6 1.6 1.2 0.8 0.4 0 0 7 4 8 12 16 20 Source current Isource 24 3 2 1 0 0 28 (μA) VDD = 5.0 V VSS = GND Ta = 25°C 4 8 12 20 24 28 (μA) VOH – RL 3 VDD = 1.8 V VDD = 3.0 V (V) VSS = GND Ta = 25°C 1.2 0.8 0.4 0 10 k 16 Source current Isource High-level output voltage VOH (V) High-level output voltage VOH 1.6 (μA) 4 VOH – RL 2.0 28 (V) High-level output voltage VOH High-level output voltage VOH (V) 8 24 VOH – Isource 1 4 20 5 VDD = 3.0 V VSS = GND Ta = 25°C 2 0 0 16 Source current Isource VOH – Isource 3 12 100 k 1M Load resistance RL VSS = GND Ta = 25°C 2 1 0 10 k 10 M (Ω) 100 k 1M Load resistance RL 6 10 M (Ω) 2007-11-01 TC75S55F/FU/FE VOH – RL VDD = 5.0 V VSS = GND Ta = 25°C 3 2 1 0 10 k This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB’s thermal characteristics, the curves may differ substantially from those shown. (mW) 4 PD – Ta 300 Power dissipation PD High-level output voltage VOH (V) 5 100 k 1M Load resistance RL 200 100 0 −40 10 M (Ω) 0 40 80 120 Ambient temperature Ta (°C) 7 2007-11-01 TC75S55F/FU/FE Package Dimensions Weight: 0.014 g (typ.) 8 2007-11-01 TC75S55F/FU/FE Package Dimensions Weight: 0.006 g (typ.) 9 2007-11-01 TC75S55F/FU/FE Package Dimensions Weight: 0.003 g (typ.) 10 2007-11-01 TC75S55F/FU/FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-11-01