TOSHIBA TC75S58FE

TC75S58F/FU/FE
TOSHIBA CMOS Linear Integrated Circuit
Silicon Monolithic
TC75S58F,TC75S58FU,TC75S58FE
Single Comparator
The TC75S58F/TC75S58FU/TC75S58FE is a CMOS generalpurpose single comparator. The device can operate off a single
power supply and draws a lower supply current than a
conventional bipolar general-purpose comparator. This device’s
open-drain output stage can be wire-ORed with those of other
open-drain output circuits.
TC75S58F
Features
•
Low-current power supply
•
Single power supply operation
•
Wide common mode input voltage range : VSS~VDD − 0.9 V
•
Open drain output circuit
•
Low input bias current
•
Small package
: IDD = 10 μA (typ.)
TC75S58FU
TC75S58FE
Weight
SSOP5-P-0.95 : 0.014 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
SON5-P-0.50
: 0.003 g (typ.)
Marking (top view)
5
Pin Connection (top view)
4
VDD
OUT
5
4
TE
1
2
1
IN (−)
3
1
2
VSS
3
IN (+)
2007-11-01
TC75S58F/FU/FE
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VDD, VSS
±3.5 or 7
V
DVIN
±7
V
Input voltage
VIN
VSS~VDD
V
Output current
IO
±35
mA
Supply voltage
Differential input voltage
Power dissipation
TC75S58F/FU
TC75S58FE
200
PD
100
mW
Operating temperature
Topr
−40~85
°C
Storage temperature
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following
precautions:
•
Ensure that no I/O pin’s voltage level ever exceeds VDD or drops below VSS.
In addition, check the power-on timing.
•
Do not subject the device to excessive noise.
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TC75S58F/FU/FE
Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C)
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
⎯
⎯
⎯
±1
±7
mV
Input offset current
IIO
⎯
⎯
⎯
1
⎯
pA
II
⎯
⎯
⎯
1
⎯
pA
Characteristics
Input bias current
Common mode input voltage
CMVIN
⎯
⎯
0
⎯
4.1
V
Supply current
IDD (Note)
⎯
⎯
⎯
11
22
μA
⎯
⎯
94
⎯
dB
Voltage gain
GV
⎯
Sink current
Isink
⎯
VOL = 0.5 V
13
25
⎯
mA
ILEAK
⎯
VO = 5 V
⎯
5
⎯
nA
Output voltage
VOL
⎯
Isink = 5.0 mA
⎯
0.1
0.3
V
Operating supply voltage
VDD
⎯
1.8
⎯
7.0
V
tPLH (1)
⎯
Over drive = 100 mV
⎯
800
⎯
tPLH (2)
⎯
TTL step input
⎯
620
⎯
tPHL (1)
⎯
Over drive = 100 mV
⎯
230
⎯
tPHL (2)
⎯
TTL step input
⎯
350
⎯
tTLH
⎯
Over drive = 100 mV
⎯
190
⎯
tTHL
⎯
Over drive = 100 mV
⎯
6
⎯
Output leak current
Propagation delay time (turn on)
Propagation delay time (turn off)
Response time
⎯
ns
ns
ns
Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C)
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
⎯
⎯
⎯
±1
±7
mV
Input offset current
IIO
⎯
⎯
⎯
1
⎯
pA
II
⎯
⎯
⎯
1
⎯
pA
Common mode input voltage
CMVIN
⎯
⎯
0
⎯
2.1
V
Supply current
IDD (Note)
⎯
⎯
⎯
10
20
μA
Characteristics
Input bias current
Isink
⎯
VOL = 0.5 V
6
18
⎯
mA
ILEAK
⎯
VO = 3 V
⎯
5
⎯
nA
Output voltage
VOL
⎯
Isink = 5.0 mA
⎯
0.15
0.35
V
Propagation delay time (turn on)
tPLH
⎯
Over drive = 100 mV
⎯
590
⎯
ns
Propagation delay time (turn off)
tPHL
⎯
Over drive = 100 mV
⎯
230
⎯
ns
tTLH
⎯
Over drive = 100 mV
⎯
170
⎯
tTHL
⎯
Over drive = 100 mV
⎯
5
⎯
Sink current
Output leak current
Response time
ns
Note: This device’s current consumption increases as its operating frequency increases. Note that the power
dissipation should not exceed the allowable power dissipation.
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TC75S58F/FU/FE
IDD – f
1000
VDD = 3 V
VSS = GND
Supply current IDD
(μA)
Ta = 25°C
100
10
1
0.001
0.01
0.1
1
Frequency f
10
100
1000
10
100
1000
(kHz)
IDD – f
1000
VDD = 5 V
VSS = GND
Supply current IDD
(μA)
Ta = 25°C
100
10
1
0.001
0.01
0.1
1
Frequency f
4
(kHz)
2007-11-01
TC75S58F/FU/FE
VOL – Isink
VOL – Isink
3.0
5.0
VDD = 3 V
2.5
4.0
(V)
Ta = 25°C
(V)
2.0
Output voltage VOL
Output voltage VOL
4.5
VSS = GND
1.5
1.0
0.5
VDD = 5 V
VSS = GND
Ta = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
Sink current Isink
30
35
0.0
0
40
(mA)
5
10
15
20
25
Sink current Isink
30
35
40
(mA)
PD – Ta
300
Power dissipation PD
(mW)
This data was obtained from an unmounted
standalone IC. If the IC is mounted on a
PCB, its power dissipation will be greater.
Note that, depending on the PCB’s thermal
characteristics, the curves may differ
substantially from those shown.
200
100
0
−40
0
40
80
120
Ambient temperature Ta (°C)
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TC75S58F/FU/FE
Package Dimensions
Weight: 0.014 g (typ.)
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TC75S58F/FU/FE
Package Dimensions
Weight: 0.006 g (typ.)
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TC75S58F/FU/FE
Package Dimensions
Weight: 0.003 g (typ.)
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TC75S58F/FU/FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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