TPCA8026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCA8026 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 5.0 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.) • High forward transfer admittance: |Yfs| =100 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.595 5.0 ± 0.2 0.05 S S Absolute Maximum Ratings (Ta = 25°C) 4 1 0.6 ± 0.1 Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 45 Pulsed (Note 1) IDP 135 PD 45 W JEDEC ⎯ PD 2.8 W JEITA ⎯ DC Drain current Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) A 1.6 W EAS 263 mJ IAR 45 A EAR 3.4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) 4.25 ± 0.2 5 1,2,3: SORCE 5,6,7,8:DRAIN TOSHIBA PD (Note 2b) 3.5 ± 0.2 Symbol 8 A 0.8 ± 0.1 Characteristic 4 1 0.166 ± 0.05 • 0.15 ± 0.05 1.1 ± 0.2 6.0 ± 0.3 Small footprint due to a small and thin package 0.95 ± 0.05 • 0.05 M A 5 4: GATE 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 4 1 2 3 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-06-26 TPCA8026 Thermal Characteristics Characteristic Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Thermal resistance, channel to case (Tc = 25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Marking (Note 5) TPCA 8026 Part number ∗ Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, IAR = 45 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ∗ Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-06-26 TPCA8026 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 VGS = 4.5 V, ID = 23 A ⎯ 2.7 4.5 VGS = 10 V, ID = 23 A ⎯ 1.8 2.2 VDS = 10 V, ID = 23 A 50 100 ⎯ ⎯ 4200 ⎯ ⎯ 1000 ⎯ ⎯ 1400 ⎯ ⎯ 15 ⎯ ⎯ 30 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-on time ton 4.7 Ω Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) ID = 23A VOUT VGS 10 V 0V RL = 0.65Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 45 A V V mΩ S pF ns ⎯ 36 ⎯ ⎯ 111 ⎯ ⎯ 113 ⎯ ⎯ 13 ⎯ ⎯ 42 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 135 A ⎯ ⎯ −1.2 V VDSF IDR = 45 A, VGS = 0 V 3 2008-06-26 TPCA8026 10 8 ID – VDS 50 3.6 3.8 10 4 8 (A) (A) ID Common source Ta = 25°C Pulse test Drain current ID Drain current 5 6 3.2 20 3 10 3.6 4.5 4.5 30 3.8 3.4 4 40 ID – VDS 100 80 5 6 Common source Ta = 25°C Pulse test 60 3.4 40 3.2 20 3 VGS = 2.8 V 0 0 0.2 0.4 0.6 0.8 Drain−source voltage VDS VGS = 2.8 V 0 0 1 (V) 1 2 Drain-source voltage ID – VGS VDS (V) 80 60 Drain−source voltage (A) VDS 5 (V) 0.4 Common source VDS = 10 V Pulse test ID 4 VDS – VGS 100 Drain current 3 40 100 Ta = −55°C 20 25 Common source Ta = 25°C Pulse test 0.32 0.24 0.16 ID = 45 A 0.08 23 12 0 0 1 2 3 Gate−source voltage 4 5 VGS 0 0 6 2 4 Gate−source voltage (V) |Yfs| – ID VGS 10 (V) 100 100 Ta = −55°C 10 100 25 1 Common source VDS = 10 V Pulse test 1 10 Drain−source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) 8 RDS (ON) – ID 1000 0.1 0.1 6 Common source Ta = 25°C Pulse test 10 4.5 VGS = 10 V 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2008-06-26 TPCA8026 RDS (ON) – Ta IDR – VDS 1000 (A) Common source Pulse test IDR 6 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) 8 ID = 12, 23, 45 A 4 VGS = 4.5 V ID = 12, 23, 45 A 2 VGS = 10 V 0 −80 −40 0 40 80 120 100 1 VGS = 0 V 1 Common source Ta = 25°C Pulse test −0.2 Capacitance – VDS −0.6 −0.8 VDS (V) 80 120 −1 Vth – Ta 3 Vth (V) 10000 Ciss 1000 Gate threshold voltage Coss C (pF) −0.4 Drain−source voltage Ambient temperature Ta (°C) Capacitance 3 4.5 10 0.1 0 160 10 Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 Drain−source voltage 100 VDS (V) 2.5 2 1.5 1 Common source 0.5 V DS = 10 V ID = 1mA Pulse test 0 −80 −40 0 40 160 Ambient temperature Ta (°C) Dynamic input/output characteristics (V) 16 VGS 40 20 Common source ID = 40 A Ta = 25°C Pulse test 30 12 VDD = 6V VDS 12 24 20 8 VGS 10 0 0 4 20 40 60 80 100 Total gate charge 120 Qg 140 160 Gate−source voltage Drain−source voltage VDS (V) 50 0 180 (nC) 5 2008-06-26 TPCA8026 rth − tw 1000 Transient thermal impedance rth (°C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25℃ (2) 100 (1) 10 (3) 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 tw (s) PD – Ta (W) 40 PD (1) 2.5 2 Drain power dissipation Drain power dissipation PD – Tc 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s PD (W) 3 (2) 1.5 1 0.5 0 0 40 1000 80 120 30 20 10 0 0 160 Ambient temperature Ta (°C) 40 80 Case temperature Tc 120 160 (°C) Safe operating area 1000 1 ms * ID max (continuous) t = 10 ms * Drain current ID (A) ID max (Pulse) * 100 10 DC operation Tc = 25 °C 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain−source voltage VDSS max 10 VDS 100 (V) 6 2008-06-26 TPCA8026 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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