Transistors with built-in Resistor UNRF2A1 Silicon NPN epitaxial planar transistor Unit: mm 3 • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 1 0.50±0.05 0.25±0.05 0.15±0.05 0.05±0.03 0.35±0.01 ■ Features 0.60±0.05 For digital circuits ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 80 mA Total power dissipation PT 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 1T Internal Connection R1 (10 kΩ) B R2 (10 kΩ) C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R 2 Transition frequency fT Typ 0.25 0.8 Unit 4.9 −30% VCB = 10 V, IE = −2 mA, f = 200 MHz Max 35 IC = 10 mA, IB = 0.3 mA Output voltage high level Input resistance Min V V 0.2 V 10 +30% kΩ 1.0 1.2 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2002 SJH00070AED 1 UNRF2A1 IC VCE 80 Collector current IC (mA) Total power dissipation PT (mW) 0.9 mA 70 0.8 mA 100 80 60 40 20 VCE(sat) IC IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 50 0.2 mA 40 30 20 0.1 mA 10 Ta = 25°C 0 0 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) 0 2 4 −25°C 50 0 1 10 100 1 Input voltage VIN (V) −25°C 25°C IC / IB = 10 0.01 1 10 10 20 VO = 0.2 V Ta = 25°C 10 10 100 100 SJH00070AED 1 000 Collector current IC (mA) IO VIN VO = 5 V Ta = 25°C 10 1 0.1 0 Output current IO (mA) 2 0.1 f = 1 MHz Ta = 25°C VIN IO 100 1 Ta = 85°C 100 10 30 Collector-base voltage VCB (V) Collector current IC (mA) 1 0.1 12 Output current IO (mA) 25°C 150 Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE Ta = 85°C 100 10 1 Cob VCB VCE = 10 V 200 8 10 Collector-emitter voltage VCE (V) hFE IC 250 6 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 120 40 0 0.5 1.0 1.5 2.0 Input voltage VIN (V) 2.5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL