TOSHIBA 2SK3566_10

2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
2.5
Pulse (t = 1 ms)
(Note 1)
IDP
7.5
Drain power dissipation (Tc = 25°C)
PD
40
W
JEDEC
Single pulse avalanche energy
(Note 2)
EAS
216
mJ
JEITA
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
DC
Drain current
1: Gate
2: Drain
3: Source
A
―
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
2
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
1
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
3
This transistor is an electrostatic sensitive device. Please handle with caution.
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2010-05-06
2SK3566
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 720 V, VGS = 0 V
⎯
⎯
100
μA
Gate leakage current
Gate-source breakdown voltage
Test Condition
Drain cut-off current
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
⎯
5.6
6.4
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 20 V, ID = 1.5 A
1.0
2.0
⎯
S
Input capacitance
Ciss
⎯
470
⎯
Reverse transfer capacitance
Crss
⎯
10
⎯
Output capacitance
Coss
⎯
50
⎯
VOUT
⎯
20
⎯
RL =
133 Ω
⎯
60
⎯
⎯
30
⎯
⎯
100
⎯
⎯
12
⎯
⎯
7
⎯
⎯
5
⎯
Drain-source breakdown voltage
Gate threshold voltage
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
50 Ω
Switching time
Fall time
ID = 1.5 A
10 V
VGS
0V
tr
tf
Turn-off time
VDD ≈ 200 V
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID =2.5 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
⎯
⎯
⎯
2.5
A
(Note 1)
IDRP
⎯
⎯
⎯
7.5
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 2.5 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 2.5 A, VGS = 0 V,
⎯
720
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
3.6
⎯
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3566
Please contact your TOSHIBA sales representative for details as to
Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product.
Lot No.
Note 4
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SK3566
ID – VDS
ID – VDS
8
6
5.5
10
5.25
1.2
(A)
1.6
COMMON
SOURCE
Tc = 25°C
PULSE TEST
3
DRAIN CURRENT ID
DRAIN CURRENT ID
(A)
2
5
0.8
4.75
4. 5
0.4
2.5
COMMON
SOURCE
Tc = 25°C
PULSE TEST
10
8
6
5.5
2
5.25
1.5
5
1
4.75
0.5
4. 5
VGS = 4 V
0
0
4
8
12
16
DRAIN-SOURCE VOLTAGE
20
VDS
VGS = 4 V
0
0
24
(V)
12
ID – VGS
VDS (V)
PULSE TEST
DRAIN-SOURCE VOLTAGE
(A)
DRAIN CURRENT ID
VDS = 20 V
3
2
Tc = −55°C
100
25
0
0
2
6
4
8
GATE-SOURCE VOLTAGE
10
VGS
12
COMMON SOURCE
Tc = 25℃
PULSE TEST
30
ID = 2.5 A
20
1.5
10
0.8
0
0
4
Tc = −55°C
25
100
1
0.1
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
DRAIN CURRENT ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
12
16
VGS
20
(V)
RDS (ON) – ID
100
0.1
8
GATE-SOURCE VOLTAGE
⎪Yfs⎪ – ID
0.01
0.01
(V)
40
(V)
10
1
VDS
VDS – VGS
COMMON SOURCE
1
36
DRAIN-SOURCE VOLTAGE
5
4
24
10
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
0.01
VGS = 10 V
0.1
1
DRAIN CURRENT ID
3
10
(A)
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2SK3566
RDS (ON) – Tc
IDR – VDS
10
COMMON SOURCE
COMMON SOURCE
PULSE TEST
DRAIN REVERSE CURRENT
IDR (A)
16
12
ID = 1.5A
8
VGS = 10 V
0.8
4
Tc = 25°C
5
PULSE TEST
3
1
0.5
0.3
1
10
0
−80
−40
0
40
80
CASE TEMPERATURE
120
Tc
160
(°C)
−0.4
−0.8
CAPACITANCE – VDS
VDS
(V)
Vth – Tc
GATE THRESHOLD VOLTAGE
Vth (V)
Ciss
(pF)
100
Coss
10
COMMON SOURCE
Crss
VGS = 0 V
Tc = 25°C
1
10
DRAIN-SOURCE VOLTAGE
VDS
VDS = 10 V
1
ID = 1 mA
PULSE TEST
(V)
−40
0
40
80
CASE TEMPERATURE
120
Tc
160
(°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
VDS (V)
DRAIN-SOURCE VOLTAGE
40
30
20
10
120
CASE TEMPERATURE
COMMON SOURCE
100
50
80
2
0
−80
PD – Tc
40
3
160
Tc
200
(°C)
500
20
(V)
1
0.1
4
400
16
VDS
200
300
12
VDD = 100 V
VGS
200
8
400
COMMON SOURCE
ID = 2.5 A
100
PULSE TEST
0
0
5
10
TOTAL GATE CHARGE
4
4
Tc = 25°C
15
Qg
20
0
VGS
C
CAPACITANCE
−1.6
5
f = 1 MHz
DRAIN POWER DISSIPATION
PD (W)
−1.2
DRAIN-SOURCE VOLTAGE
1000
0
0
VGS = 0V
3
0.1
0
GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( Ω)
20
(nC)
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2SK3566
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t
SINGLE PULSE
0.01
T
Duty
Duty
= t/T
= t/T
Rth
Rth
= 3.125°C/W
= 1.25°C/W
(ch-c)
(ch-c)
0.001
10μ
100μ
1m
10m
PULSE WIDTH
100m
1
tw (s)
SAFE OPERATING AREA
EAS – Tch
250
ID max (PULSED) *
100 μs *
ID max (CONTINUOUS)
1
AVALANCHE ENERGY
EAS (mJ)
DRAIN CURRENT ID
(A)
100
10
1 ms *
DC OPERATION
Tc = 25°C
0.1
0.01
1
10
* SINGLE NONREPETITIVE PULSE
Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
10
100
DRAIN-SOURCE VOLTAGE
VDS
150
100
50
0
25
VDSS max
1000
200
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
10000
(V)
15 V
BVDSS
IAR
−15 V
VDD
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 63.4mH
5
VDS
WAVEFORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
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2SK3566
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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