2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4023 Switching Regulator, DC/DC Converter 1.5 ± 0.2 Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.6 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 6.5 ± 0.2 • • • • • 1.1 ± 0.2 0.9 Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V Gate-source voltage VGSS ±30 V (Note 1) ID 1 Pulse (t = 1 ms) (Note 1) IDP 2 DC Drain current 0.8 MAX. 5.7 2.3 2.3 1 0.6 MAX. 2 2.3 ± 0.2 Characteristic 4.1 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 3 0.6 ± 0.15 1.1 MAX. 0.6 ± 0.15 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 122 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 2 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 1 3 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 203 mH, IAR = 1 A, RG = 25Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-07-11 2SK4023 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Gate-source breakdown voltage Test Condition Drain cutoff current V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 4.0 4.6 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 0.5 A 0.3 0.8 ⎯ S Input capacitance Ciss ⎯ 180 ⎯ Reverse transfer capacitance Crss ⎯ 2 ⎯ Output capacitance Coss ⎯ 20 ⎯ ⎯ 7 ⎯ ⎯ 15 ⎯ ⎯ 30 ⎯ ⎯ 70 ⎯ ⎯ 5 ⎯ ⎯ 3 ⎯ ⎯ 2 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 0.5 A 10 V VGS 0V ton RL = 400 Ω 10 Ω Switching time Fall time VOUT tf pF ns VDD≒200 V Turn-off time toff Duty ≤ 1%, tw = 10 μs Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD≒360 V, VGS = 10 V, ID = 1 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 1 A (Note 1) IDRP ⎯ ⎯ ⎯ 2 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, ⎯ 350 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 1.3 ⎯ μC Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K4023 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 2 2009-07-11 2SK4023 ID – VDS 10 5.75 6.0 5.5 5.25 0.4 5.0 4.75 0.2 2 4 6 Drain-source voltage 8 6.0 5.75 1.2 5.5 0.8 5.25 5.0 0.4 VGS = 4.5 V 0 VGS = 4.5 V 0 10 0 VDS (V) 10 20 VDS (V) Drain-source voltage Drain current ID (A) 0.8 100 Ta = −55°C 25 0 2 4 6 Gate-source voltage 8 16 12 8 ID = 1 A 4 0.25 0 10 Common ソース接地 source Tc = 25°C Tc = 25°C Pulse test パルス測定 0 VGS (V) 4 8 Common source ソース接地 VDS = 10 V VDS = 20 V Pulse test パルス測定 50 30 Ta = −55°C 25 1 100 0.5 0.3 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 16 20 VGS (V) RDS (ON) − ID Drain-source ON-resistance RDS (ON) (Ω) (S) Forward transfer admittance ⎪Yfs⎪ 3 0.5 12 Gate-source voltage ⎪Yfs⎪ – ID 5 50 VDS – VGS 1.2 0.4 40 VDS (V) 20 Common source ソース接地 VDS VDS= =1020V V Pulse test パルス測定 1.6 0 30 Drain-source voltage ID – VGS 2.0 Common source ソース接地 Tc = Tc 25°C = 25°C Pulse test パルス測定 6.25 1.6 0.6 0 8.0 10 8.0 0.8 Drain current ID (A) ID – VDS 2.0 Common source ソース接地 TcTc = 25°C = 25°C Pulse test パルス測定 Drain current ID (A) 1.0 1 3 10 5 Drain current ID (A) VGS = 10, 15 V 3 1 0.1 10 ソース接地 Common source Tc Tc==25°C 25°C VGS = 10 V パルス測定 Pulse test 0.3 0.5 1 3 5 10 Drain current ID (A) 3 2009-07-11 2SK4023 IDR – VDS 10 (A) Common source ソース接地 VV = 10 V GS GS = 10 V Pulse test パルス測定 12 ID = 1A Drain reverse current IDR 0.5 8 0.25 4 Common source ソース接地 Tc = 25°C Tc = 25°C Pulse test 3 パルス測定 1 0.3 0.1 10 3 0.03 1 −40 0 40 80 Case temperature Tc 0.01 160 0 (°C) −0.2 −0.4 VGS = 0, −1 V −0.6 −0.8 Drain-source voltage Capacitance – VDS VDS (V) 5 Common ソース接地 source VDS = VDS 10 V = 10 V ID = 1IDmA = 1 mA Pulseパルス測定 test 300 4 Vth (V) 100 50 30 Gate threshold voltage Capacitance C (pF) Ciss Coss 10 3 Common source VGS = 0V ソース接地 f ==10MHz VGS V f=1 TcMHz = 25°C Tc = 25°C 1 0.1 0.3 0.5 Crss 1 3 5 Drain-source voltage 10 30 50 3 2 1 0 −80 100 VDS (V) PD – Tc 0 40 80 VDS (V) 30 20 10 40 80 120 Case temperature Tc 120 160 (°C) Dynamic input/output characteristics 500 Drain-source voltage Drain power dissipation PD (W) −40 Case temperature Tc 40 0 0 −1.2 Vth – Tc 500 5 −1.0 160 400 (°C) 180 VDS 20 16 90 300 12 VDS = 360 V 200 8 VGS 100 0 200 Common source ID = 1 A Tc = 25°C Pulse test 0 2 4 4 6 8 VGS (V) 0 −80 Gate-source voltage Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – Tc 16 0 10 Total gate charge Qg (nC) 4 2009-07-11 2SK4023 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 5 3 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.05 PDM 0.05 0.1 Single pulse t 0.02 T 0.03 0.01 0.01 10 μ Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 10 m Pulse width 100 m tw Safe operating area 1 10 (S) EAS – Tch 150 Avalanche energy EAS (mJ) 30 10 3 ID max (pulsed) * Drain current ID (A) 100 μs * 1 ID max (continuous) * 1 ms * 0.3 DC operation Tc = 25°C 0.1 90 60 30 0 25 * Single nonrepetitive pulse * 単発パルス Tc = 25°C Tc = 25°C 安全動作領域は温度によっ 0.03 Curves must be derated linearly てディレーティングして考 with increase in temperature. える必要があります。 0.01 1 120 50 75 100 125 150 Channel temperature (initial) Tch (°C) VDSS max 10 Drain-source voltage 100 1000 15 V VDS (V) BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = 90 V, L = 203 mH 5 VDS Waveform EΕ AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2009-07-11 2SK4023 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-07-11