TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TOSHIBA InGaAℓP LED TLRE62T(F),TLRME62T(F),TLSE62T(F),TLOE62T(F),TLYE62T(F), TLPYE62T(F),TLGE62T(F),TLFGE62T(F),TLPGE62T(F) Panel Circuit Indicators Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 3mm package • InGaAℓP technology • All plastic mold type • Transparent lens • Lineup: 6 colors (red, orange, yellow, pure yellow, green and pure green) • High intensity light emission • Excellent low current light output • Applications: message boards, security devices and dashboard displays Lineup Product Name Color TLRE62T(F) Red TLRME62T(F) Red TLSE62T(F) Red TLOE62T(F) Orange TLYE62T(F) Yellow TLPYE62T(F) Pure Yellow TLGE62T(F) Green TLFGE62T(F) Green TLPGE62T(F) Pure Green Material JEDEC ― JEITA ― TOSHIBA 4-3H1 Weight: 0.14 g(Typ.) InGaAlP 1 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) Absolute Maximum Ratings (Ta = 25°C) Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) TLRE62T(F) 50 4 120 TLRME62T(F) 50 4 120 TLSE62T(F) 50 4 120 TLOE62T(F) 50 4 120 TLYE62T(F) 50 4 120 TLPYE62T(F) 50 4 120 TLGE62T(F) 50 4 120 TLFGE62T(F) 50 4 120 TLPGE62T(F) 50 4 120 Product Name Operating Temperature Topr (°C) Storage Temperature Tstg (°C) −40~100 −40~120 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLRE62T(F) 630 (644) 20 20 47.6 120 20 1.9 2.4 20 50 4 TLRME62T(F) 626 (636) 23 20 47.6 180 20 1.9 2.4 20 50 4 TLSE62T(F) 613 (623) 20 20 85 200 20 1.9 2.4 20 50 4 TLOE62T(F) 605 (612) 20 20 153 350 20 2.0 2.4 20 50 4 TLYE62T(F) 587 (590) 17 20 85 250 20 2.0 2.4 20 50 4 TLPYE62T(F) 580 (583) 14 20 47.6 150 20 2.0 2.4 20 50 4 TLGE62T(F) 571 (574) 17 20 47.6 110 20 2.0 2.4 20 50 4 TLFGE62T(F) 565 (568) 15 20 27.2 70 20 2.0 2.4 20 50 4 TLPGE62T(F) 558 (562) 14 20 15.3 20 2.1 Unit nm mA 45 mcd mA 2.4 V 20 50 4 mA μA V Precautions • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLRE62T(F) IF – V F IV – IF 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.3 0.1 −20 0 20 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 60 40 600 (°C) 620 640 Wavelength Radiation pattern 660 680 700 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 3 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLRME62T(F) IF – V F 100 Ta = 25°C IV (mcd) 50 30 Luminous intensity IF (mA) Ta = 25°C Forward current IV – IF 1000 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 (°C) 620 640 Wavelength Radiation pattern 660 680 700 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 5 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 4 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLSE62T(F) IV – IF IF – V F 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc 0.8 0.6 0.4 0.2 0 560 80 60 40 580 (°C) 600 620 Wavelength Radiation pattern 640 660 680 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 5 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLOE62T(F) IF – V F IV – IF 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 60 40 560 (°C) 580 600 Wavelength Radiation pattern 620 640 660 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 6 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLYE62T(F) IF – V F IV – IF 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 60 40 560 (°C) 580 600 Wavelength Radiation pattern 620 640 660 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 7 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLPYE62T(F) IF – V F IV – IF 1000 100 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 −20 20 0 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 540 80 560 (°C) 580 600 Wavelength Radiation pattern 620 640 660 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 8 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLGE62T(F) IF – V F IV – IF 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 520 80 540 (°C) 560 580 Wavelength Radiation pattern 600 620 640 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 5 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 9 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLFGE62T(F) IF – V F IV – IF 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 −20 20 0 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 520 80 540 (°C) 560 580 Wavelength Radiation pattern 600 620 640 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 10 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) TLPGE62T(F) IF – V F IV – IF 100 1000 Ta = 25°C IV (mcd) 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 100 10 1 1 2.3 10 (V 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 520 80 540 (°C) 560 580 Wavelength Radiation pattern 600 620 640 100 120 λ (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 5 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 11 80 Ta (°C) 2007-10-01 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 12 2007-10-01