MARKTECH TLOH50TF

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
Preliminary
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
・This material is technological examination material to aim at the product
introduction. The change in the content of the characteristic might
be accompanied at the final specification process. The final specification
will be able to be gotten in the brokerage department when the product is
designed and to get the confirmation.
For part availability and ordering information please call Toll Free: 800.984.5337
Website: www.marktechopto.com | Email: [email protected]
1
2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
TOSHIBA InGaAℓP LED
Preliminary
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
Panel Circuit Indicators
Unit: mm
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
3 mm package
•
InGaAℓP technology
•
All plastic mold type
•
Transparent lens
•
Line-up: 3 colors (red, orange, yellow)
•
High intensity light emission
•
Excellent low current light output
Lineup
Product Name
TLRH50T(F)
TLSH50T(F)
Color
Material
Red
TLOH50T(F)
Orange
TLYH50T(F)
Yellow
InGaAlP
JEDEC
―
JEITA
―
TOSHIBA
4-3E1A
Weight: 0.14 g
2
2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
Preliminary
Maximum Ratings (Ta = 25°C)
Product Name
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
Topr (°C)
Storage Temperature
Tstg (°C)
50
4
120
−40~100
−40~120
TLRH50T(F)
TLSH50T(F)
TLOH50T(F)
TLYH50T(F)
Electrical and Optical Characteristics (Ta = 25°C)
λd
λP
∆λ
IF
Luminous Intensity
IV
Min
Typ.
IF
TLRH50T(F)
630
(644)
13
20
850
2000
20
1.9
2.4
20
50
4
TLSH50T(F)
613
(623)
13
20
2720
4700
20
2.0
2.4
20
50
4
TLOH50T(F)
605
(612)
13
20
1530
5800
20
2.0
2.4
20
50
4
TLYH50T(F)
587
(590)
13
20
1530
4400
20
2.0
2.4
20
50
4
mA
µA
V
Product Name
Unit
Typ. Emission Wavelength
nm
mA
mcd
mA
Forward Voltage
VF
Typ.
Max
IF
V
Reverse Current
IR
Max
VR
Precautions
•
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(Soldering portion of lead: up to 1.6 mm from the body of the device)
•
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
•
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
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2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
TLRH50T(F)
Preliminary
IF – V F
IV – IF
100
10000
Ta = 25°C
(mcd)
IV
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
10
1
2.3
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
1.0
3
IF = 20 mA
IV
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
580
80
600
(°C)
620
640
Wavelength
Radiation pattern
660
λ
680
700
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
10
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
4
80
Ta
100
120
(°C)
2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
Preliminary
TLSH50T(F)
IF – V F
IV – IF
100
10000
Ta = 25°C
(mcd)
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
IV
Forward current
10
1000
Luminous intensity
30
IF
(mA)
Ta = 25°C
50
100
10
1
2.3
10
(V)
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
IF = 20 mA
Relative luminous intensity
IV
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
Ta = 25°C
0.8
0.6
0.4
0.2
0
560
80
60
40
580
(°C)
600
620
Wavelength
Radiation pattern
λ
640
660
680
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
100
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
5
80
Ta
100
120
(°C)
2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
TLOH50T(F)
Preliminary
IF – V F
100
IV – IF
Ta = 25°C
(mcd)
Luminous intensity
Forward current
Ta = 25°C
10000
IV
30
IF
(mA)
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
1
2.3
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
IF = 20 mA
Relative luminous intensity
IV
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
Ta = 25°C
0.8
0.6
0.4
0.2
0
540
80
60
40
560
(°C)
580
600
Wavelength
Radiation pattern
620
λ
640
660
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
10
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
6
80
Ta
100
120
(°C)
2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
Preliminary
TLYH50T(F)
IF – V F
IV – IF
100
10000
Ta = 25°C
(mcd)
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
IV
Forward current
10
1000
Luminous intensity
30
IF
(mA)
Ta = 25°C
50
100
10
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
0.8
0.6
0.4
0.2
0
540
80
60
40
560
(°C)
580
600
Wavelength
Radiation pattern
620
λ
640
660
100
120
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
7
80
Ta
(°C)
2006-12-5
TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F)
RESTRICTIONS ON PRODUCT USE
000707EAC
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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2006-12-5