TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅵ) TPCA8128 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm 1.27 0.4 ± 0.1 8 • Enhancement mode 0.15 ± 0.05 : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 m A ) 0.95 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V DC (Note 1) ID −34 Pulse (Note 1) IDP −102 Drain power dissipation (Tc = 25°C) PD 45 Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 EAS 150 Drain current Single pulse avalanche energy (Note 3) 0.05 S S Symbol 0.595 5.0 ± 0.2 4 1 0.6 ± 0.1 Characteristics 4 1 0.166 ± 0.05 Low leakage current : IDSS = −10 μA (max) (VDS = −30 V) 4.25 ± 0.2 8 5 A W mJ Avalanche current IAR −34 A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3), refer to the next page. 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ⎯ JEITA ⎯ TOSHIBA A 1.1 ± 0.2 • 3.5 ± 0.2 Low drain-source ON resistance : RDS (ON) = 3.7 mΩ (typ.) 0.8 ± 0.1 • 0.05 M A 5 5.0 ± 0.2 Small footprint due to compact and slim package 6.0 ± 0.3 • 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2010-01-07 TPCA8128 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc = 25 ℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 4) TPCA 8128 Type ※ Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = −34 A Note 4: ※ Weekly code: (Three digits) Week of manufacture (01 for first week of a year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2010-01-07 TPCA8128 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 10 V (Note 5) −21 ⎯ ⎯ VDS = −10 V, ID = −0.5mA −0.8 ⎯ −2.0 VGS = −4.5 V, ID = −17 A ⎯ 5.1 6.7 VGS = −10 V, ID = −17 A ⎯ 3.7 4.8 ⎯ 4800 ⎯ ⎯ 800 ⎯ ⎯ 900 ⎯ ⎯ 11 ⎯ ⎯ 21 ⎯ Vth Drain-source ON resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time tr VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V ton Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) ID = −17A Output RL = 0.88 Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs VDD ≈ −24 V, VGS = −10 V ID = −34 A V V mΩ pF ns ⎯ 135 ⎯ ⎯ 390 ⎯ ⎯ 115 ⎯ ⎯ 11 ⎯ ⎯ 30 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −102 A ⎯ ⎯ 1.2 V VDSF IDR = −34 A, VGS = 0 V Note 5: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. 3 2010-01-07 TPCA8128 ID – VDS −3 −2.6 −40 Common source Ta = 25°C Pulse test −2.5 −4.5 (A) ID Drain current −2.8 −30 (A) −3.6 −2.4 −20 −2.3 −2.2 −10 −60 −40 Common source Ta = 25°C Pulse test −3 −3.2 −10 −3.4 −3.8 −4.5 −80 ID −10 ID – VDS −100 Drain current −50 −2.8 −2.6 −2.5 −2.4 −2.3 −20 −2.2 −2.1 0 −0.4 0 −0.8 VGS = −2 V −2 −1.6 −1.2 Drain−source voltage VDS 0 VGS = −2.1 V −1 0 (V) VDS (V) Drain−source voltage (A) ID Drain current 100 25 −40 −20 −1 0 −2 −3 Gate−source voltage −4 (V) VDS – VGS Ta = −55°C −60 0 VDS −0.5 Common source VDS = −10 V Pulse test −80 −3 Drain-source voltage ID – VGS −100 −2 VGS −0.4 −0.3 −0.2 ID = −34 A −0.1 (V) −17 −8.5 0 −4 Common source Ta = 25°C Pulse test 0 −4 −8 −12 Gate−source voltage −16 VGS −20 (V) RDS (ON) – ID Drain−source ON-resistance RDS (ON) (mΩ) 100 Common source Ta = 25°C Pulse test 10 −4.5 VGS = −10 V 1 −0.1 −1 Drain current −10 ID −100 (A) 4 2010-01-07 TPCA8128 RDS (ON) – Ta IDR – VDS −100 10 IDR ID = −8.5, −17, −34 A 6 VGS = −4.5 V 4 ID = −8.5, −17, −34 A VGS = −10 V 2 0 −80 −40 −10 (A) 8 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 40 80 Ambient temperature 120 Ta −1 −10 Common source Ta = 25°C Pulse test 0 0.2 (°C) 0.4 0.6 Drain−source voltage Capacitance – VDS 0.8 1 VDS (V) 80 120 1.2 Vth – Ta −2 Vth (V) Coss Crss C (pF) Ciss Gate threshold voltage 10000 Capacitance VGS = 0 V −1 −0.1 160 −3 −4.5 1000 Common source VGS = 0 V f = 1 MHz Ta = 25°C 100 −0.1 −1 −10 Drain−source voltage −1.2 −0.8 −0.4 Common source VDS = −10 V ID = −0.5mA Pulse test 0 −80 −100 VDS −1.6 (V) −40 0 40 Ambient temperature Ta 160 (°C) VDS = −24 V −25 −20 −20 VGS −15 −15 −12 −6 −10 VDD = −24 V −6 −12 −5 0 0 40 80 Total gate charge −5 120 Qg −10 160 VGS −30 Common source ID = −34 A Ta = 25°C −25 Pulse test Gate−source voltage Drain−source voltage VDS (V) −30 (V) Dynamic input/output characteristics 0 (nC) 5 2010-01-07 TPCA8128 rth − tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25℃ (2) 100 (1) 10 (3) 1 Single Pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 PD – Tc PD – Ta (Note 2a) (W) board(a) (1) (2)Device mounted on a glass-epoxy board(b) (Note 2b) PD 2.5 t = 10 s 2 Drain power dissipation Drain power dissipation 50 (1)Device mounted on a glass-epoxy PD (W) 3 (2) 1.5 1 0.5 0 0 40 80 Ambient temperature 1000 (s) 120 Ta 40 30 20 10 0 160 0 40 80 Case temperature (°C) 120 Tc 160 (°C) Safe operating area −100 ID max (Pulse) * 1 ms * ID (A) −1000 Drain current t = 10 ms * −10 −1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2010-01-07 TPCA8128 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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