TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V (Note 1) ID −13 Pulse (Note 1) IDP −52 Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W JEDEC ⎯ Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W JEITA ⎯ Single pulse avalanche energy (Note 3) EAS 110 mJ TOSHIBA Avalanche current IAR −13 A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current DC (Note 1) A Note 1, Note 2, Note 3 : See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-11-20 TPC8127 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 4) TPC8127 Part No. (or abbreviation code) Lot No. Note 5 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a)Device mounted on a glass-epoxy board (a) (b)Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25 °C (initial), L =500 μ H, RG = 25 Ω, IAR = −13 A Note 4: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-11-20 TPC8127 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 10 V −21 ⎯ ⎯ VDS = −10 V, ID = −0.5 mA −0.8 ⎯ −2.0 VGS = −4.5 V, ID = −6.5 A ⎯ 6.8 8.9 VGS = −10 V, ID = −6.5 A ⎯ 5 6.5 ⎯ 3800 ⎯ ⎯ 620 ⎯ ⎯ 710 ⎯ ⎯ 9 ⎯ ⎯ 17 ⎯ Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-ON time ton VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = −6.5A VOUT 4.7 Ω Switching time Fall time (Note 6) RL = 2.3 Ω Drain-source breakdown voltage VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs VDD ≈ −24 V, VGS = −10 V, ID = −13 A V V mΩ pF ns ⎯ 135 ⎯ ⎯ 390 ⎯ ⎯ 92 ⎯ ⎯ 10 ⎯ ⎯ 25 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse Forward voltage (diode) (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −52 A ⎯ ⎯ 1.2 V VDSF IDR = −13 A, VGS = 0 V Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. 3 2009-11-20 TPC8127 ID – VDS −2.6 −10 ID −8 −3.8 −3.2 Common source −2.8 Ta = 25°C Pulse test −3 −40 −2.6 (A) −2.5 −2.4 −12 ID – VDS −6 −4.5 −50 Common source Ta = 25°C Pulse test −16 Drain current (A) −10 −2.8 −2.3 −2.2 −4 ID −3 −30 Drain current −6 −4.5 −3.4 −20 −20 −2.5 −2.4 −2.3 −10 −2.2 VGS = −2.1 V 0 −0.2 0 −0.4 −0.6 −0.8 Drain−source voltage VDS VGS = −2.1 V 0 −1 −0.4 0 (V) (V) −0.4 (A) VDS (V) Common source VDS = −10 V Pulse test −40 −30 Drain−source voltage ID VDS −2 VDS – VGS ID – VGS Drain current −1.6 −1.2 Drain-source voltage −50 −20 −10 Ta = 100°C −55 25 0 −0.8 −1 0 −2 −3 Gate−source voltage VGS Common source Ta = 25°C Pulse test −0.3 −0.2 −0.1 ID = −13 A −6.5 −3 0 −4 (V) 0 −4 −8 −12 Gate−source voltage −16 VGS −20 (V) RDS (ON) – ID Drain−source ON-resistance RDS (ON) (mΩ) 100 Common source Ta = 25°C Pulse test 10 VGS = −4.5 V −10 1 −0.1 −1 Drain current −10 ID −100 (A) 4 2009-11-20 TPC8127 RDS (ON) – Ta IDR – VDS −100 10 IDR ID = −3, −6.5, −13 A 8 VGS = −4.5 V 6 ID = −3, −6.5, −13 A 4 VGS = −10 V 2 0 −80 −40 0 40 Ambient temperature 80 120 Ta −1 Common source Ta = 25°C Pulse test 0.2 0.4 1 VDS (V) 80 120 1.2 Vth – Ta Vth (V) Gate threshold voltage (pF) Ciss C 1000 Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C −10 Common source VDS = −10 V ID = −0.5mA Pulse test −0.4 0 −80 −100 VDS −0.8 (V) −40 −30 VDS (V) (W) (1) Drain−source voltage 1.2 (2) 0.8 0.4 0 40 80 Ambient temperature Ta 160 (°C) Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t = 10 s 1.6 40 Ambient temperature PD – Ta 2 0 120 Ta −25 VDD = −24 V −20 (°C) −20 VDS VGS −15 −12 VDD = −24 V −6 −10 −12 −5 −5 0 20 40 60 80 Total gate charge 5 −15 −6 −10 0 160 −30 Common source ID = −13 A Ta = 25°C −25 Pulse test 120 100 Qg 140 (V) Drain−source voltage −1.2 VGS −1 −1.6 Gate−source voltage Capacitance 0.8 −2 100 −0.1 PD 0.6 Drain−source voltage Capacitance – VDS Drain power dissipation VGS = 0 V −1 (°C) 10000 0 −3 −10 −0.1 0 160 −4.5 −10 (A) Common source Pulse test Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) 12 0 (nC) 2009-11-20 TPC8127 rth − tw 1000 Transient thermal impedance rth (°C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area −100 ID max (Pulse) * t = 10 ms * −10 Drain current ID (A) 1 ms * −1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2009-11-20 TPC8127 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-11-20