TOSHIBA 2SC5376F_07

2SC5376F
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC5376F
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
•
Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.)
•
High Collector Current: IC = 400 mA (max)
Unit: mm
@IC = 10 mA/IB = 0.5 mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit (top view)
Type Name
hFE Classification
FA
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2SC5376F
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 15 V, IE = 0
⎯
⎯
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
0.1
μA
300
⎯
1000
hFE
DC current gain
(Note)
VCE = 2 V, IC = 10 mA
VCE (sat) (1)
IC = 10 mA, IB = 0.5 mA
⎯
15
30
mV
VCE (sat) (2)
IC = 200 mA, IB = 10 mA
⎯
110
250
mV
Base-emitter voltage
VBE (sat)
IC = 200 mA, IB = 10 mA
⎯
0.87
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 10 mA
80
130
⎯
MHz
Collector-emitter saturation voltage
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
⎯
4.2
⎯
pF
Collector-emitter on resistance
Ron
IB = 1 mA, Vin = 1 Vrms, f = 1 kHz
⎯
0.9
⎯
Ω
⎯
85
⎯
ns
⎯
170
⎯
ns
⎯
40
⎯
ns
ton
Switching time
Storage time
tstg
10 μs
600 Ω
INPUT 300 Ω
0V
60 Ω
OUTPUT
50 Ω
Turn-on time
VCC = 6 V
VBB = −3 V
Falll time
Note: hFE Classification
tf
Duty Cycle <
= 2%
IB1 = −IB2 = 5 mA
A: 300 to 600, B: 500 to 1000
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2SC5376F
IC – VCE
hFE – IC
1.0
10000
Common emitter
DC current gain hFE
(A)
Collector current IC
5
4
0.6
VCE = 2 V
3000
0.8
6
Common emitter
5000
Ta = 25°C
3
2
0.4
1
1000
Ta = 100°C
25
500
300
−25
100
50
0.2
30
IB = 0.5 mA
0
0
1
2
3
4
Collector-emitter voltage
10
0.1
5
0.3
1
VCE (V)
3
30
100
Collector current IC
(mA)
VCE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (mV)
30
100
50
30
Ta = 100°C
−25
25
5
3
0.3
1
3
10
30
100
Collector current IC
(mA)
300
Common emitter
IC/IB = 20
Ta = 25°C
10
5
3
1
0.5
0.3
0.1
0.1
1000
0.3
1
3
IC – VBE
Collector output capacitance Cob (pF)
Common emitter
VCE = 2V
Collector current IC
(mA)
300
100
50
30
Ta = 100°C
25
−25
5
3
1
0.0
0.4
0.8
Base-emitter voltage
1.2
VBE (V)
100
300 500
(mA)
IE = 0 A
f = 1 MHz
50
Ta = 25°C
30
10
5
3
1
0.1
1.6
30
Cob – VCB
100
500
10
Collector current IC
1000
10
1000
50
Common emitter
500 I /I = 20
C B
300
1
0.1
300
VBE (sat) – IC
1000
10
10
0.3
1
3
10
30
100
Collector-base voltage VCB (V)
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2SC5376F
PC – Ta
160
Collector power dissipation
PC
(mW)
200
120
80
40
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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2SC5376F
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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