DIODES B120B

B120/B - B160/B
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
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Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material - UL Flammability
Classification 94V-0
SMA
B
A
C
D
J
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G
E
H
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
SMB 0.093 grams
Marking: Type Number
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.62
2.00
2.62
All Dimensions in mm
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 130°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@ IF = 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
@TA = 25°C
@ TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
B120/B
B130/B
B140/B
B150/B
B160/B
Unit
VRRM
VRWM
VR
20
30
40
50
60
V
VR(RMS)
14
21
28
35
42
V
IO
1.0
A
IFSM
30
A
VFM
0.50
0.70
V
IRM
0.5
10
mA
Cj
110
pF
RqJT
20
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm 2 (0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS13002 Rev. H-2
1 of 3
B120/B-B160/B
IF, INSTANTANEOUS FWD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
1.0
0.5
0
25
50
75
100
125
TA = +75°C
150
TA = +25°C
1.0
TA = -25°C
IF Pulse Width = 300ms
0.2
0.4
0.6
0.8
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - B120/B thru B140/B
10
40
IFSM, PEAK FORWARD SURGE CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TA = +125°C
0.1
TT, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
1.0
TA = +125ºC
TA = +25ºC
0.1
IF Pulse Width = 300 ms
0.01
0
0.2
0.4
0.8
0.6
Tj = 25°C
f = 1 MHz
100
10
0.1
1
10
20
10
Tj = 150ºC
0
100
10
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
100
10,000
1000
TA = +125°C
100
TA = +75°C
10
TA = +25°C
1
0.1
TA = -25°C
0.01
0
10
20
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 6 Typical Reverse Characteristics, B120/B thru B140/B
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
DS13002 Rev. H-2
30
1
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1000
Single Half Sine-Wave
(JEDEC Method)
1.0
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 3 Typ. Forward Characteristics - B150/B thru B160/B
Cj, JUNCTION CAPACITANCE (pF)
10
2 of 3
B120/B-B160/B
IR, INSTANTANEOUS REVERSE CURRENT (mA)
10,000
1000
TA = +125°C
100
TA = +70°C
10
1
TA = +25°C
0.1
0
10
20
30
40
50
60
70
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 7 Typical Reverse Characteristics, B150/B thru B160/B
DS13002 Rev. H-2
3 of 3
B120/B-B160/B