TLP197G TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET TLP197G Modem Fax PBX Measurement Instrumentation Unit in mm The TOSHIBA mini flat photo relay TLP197G is a small outline photo relay,suitable for surface mount assembly. The TLP197G consists of an gallium arsenide infrared emitting diode optically coupled to a photo―MOS FET in a six lead 2.1mm height package, which enable TLP197G to be applied in card modems. The TLP197G is a bi―directional switch which can replace mechanical relays in fax machines and modems etc. • SOP 6pin(2.54SOP6): 1−form−A • Peak off−state voltage: 350V (min) • Trigger LED current: 3mA (max) • On−state current:120mA(max) (A connection) JEDEC ― EIAJ ― • On−state resistance: 35Ω(max) TOSHIBA • Isolation voltage: 1500Vrms (min) Weight: 0.13g • UL recognized: UL1577, file No./E67349 • BSI approved: BS EN60065: 2002, certificate No.8753 BS EN60950-1: 2002, certificate No.8754 • SEMKO approved: SS EN60065 SS EN60950 • Option(V4)type TUV approved: DIN EN 60747-5-2 Certificate no. 40009351 Pin Configuration (top view) 1 6 2 5 3 4 1 : Anode 2 : Cathode 3 : NC 4 : Drain D1 5 : Source 6 : Drain D2 Schematic 1-Form-a 6 4 1 1 3 1 6 2 5 4 2007-10-01 TLP197G Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA Forward current ΔIF/°C −0.5 mA/°C Pulse forward current (100μs pulse,100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 350 V ION 120 mA ΔION/°C −1.2 mA/°C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~85 °C Led Forward current derating (Ta ≥ 25°C) Off−state output terminal voltage A connection On−state current Detector B connection C connection A connection On−state current derating (Ta ≥ 25°C) B connection C connection Junction temperature Lead soldering temperature(10 s) Isolation voltage (AC,1 min.,RH ≤ 60%) (Note 1) Tsol 260 °C BVS 1500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Device considered a two−terminal device: Pins1,2 and 3 shorted together and pins 4,5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VOFF ⎯ ⎯ 280 V Forward current IF 5 7.5 25 mA On−state current(A connection) ION ⎯ ⎯ 100 mA Operating temperature Topr −20 ⎯ 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Circuit Connections 1 6 2 5 3 4 LOAD 1 6 LOAD 1 6 LOAD AC DC 2 5 DC 2 5 DC 3 4 3 4 or A Connection B Connection 2 C Connection 2007-10-01 TLP197G Individual Electrical Characteristics (Ta = 25°C) Detector Led Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ⎯ ⎯ 10 μA Capacitance CT V=0, f=1MHz ⎯ 30 ⎯ pF Off−state current IOFF VOFF=350V ⎯ ⎯ 1 μA Capacitance COFF V=0, f=1MHz ⎯ 40 ⎯ pF Min. Typ. Max. Unit ION=120mA ⎯ 1 3 mA ION=120mA, IF=5mA ⎯ 22 35 ION=20~120mA, IF=5mA ⎯ 26 40 Min. Typ. Max. Unit ⎯ 0.8 ⎯ pF ⎯ Ω Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current On−state resistance IFT A RON connection Test Condition Ω Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output Isolation resistance Test Condition CS VS=0, f=1MHz RS VS=500V, R.H. < = 60% 5×10 BVS 10 14 1500 ⎯ ⎯ AC,1second (in oil) ⎯ 3000 ⎯ DC,1minute (in oil) ⎯ 3000 ⎯ Vdc Min. Typ. Max. Unit ⎯ 0.3 1 ⎯ 0.1 1 AC,1minute Isolation voltage 10 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Turn−οn time tON RL=200Ω Turn−οff time tOFF VCC=20V, IF=5mA (Note 2) ms (Note2): Switching time test circuit IF 1 6 2 4 RL VCC IF VOUT VOUT tON 3 10% 90% tOFF 2007-10-01 TLP197G IF – Ta ION – Ta 100 140 On-state current ION (mA) Allowable forward current IF (mA) 120 80 60 40 20 100 80 60 40 20 0 －20 0 20 60 40 80 0 －20 120 100 20 0 Ambient temperature Ta (°C) IFP – DR 80 100 IF –VF 100 Pulse width ≦ 100μs 3000 50 Ta = 25°C Ta = 25°C (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 60 Ambient temperature Ta (°C) 5000 300 100 50 30 10 3 40 5 3 1 0.5 0.3 10－ 3 10－ 3 2 10 3 －1 10 3 0.1 0.6 0 0.8 Duty cycle ratio DR 1.0 1.2 1.4 Forward voltage VF ΔVF/ΔTa – IF 1.6 1.8 2.6 3.0 (V) IFP – VFP 1000 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) －2.8 －2.4 －2.0 －1.6 －1.2 －0.8 －0.4 0.1 0.3 0.5 1 3 Forward current IF 5 10 30 500 300 100 50 30 10 Pulse width ≦ 10μs 5 1 0.6 50 (mA) Repetitive 3 frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 Pulse forward voltage 4 2.2 VFP (V) 2007-10-01 TLP197G IFT – Ta ION – VON 5 150 Ta = 25°C IF = 5mA ION = 120mA On-state current ION (mA) Trigger led current IFT (mA) A Connection 4 3 2 1 100 50 0 －50 －100 0 －40 －20 0 20 40 60 80 －150 100 －2 ION = 120mA 500 IF = 5mA (mA) 300 Off-state current IOFF On-state resistance RON (Ω) IOFF – Ta 1000 A Connection 100 20 10 0 －40 －20 0 20 40 60 80 50 30 10 5 3 1 －20 100 VOFF = 350V 0 Ambient temperature Ta (°C) tON – Ta 100 tOFF – Ta RL = 200Ω (μs) IF = 5ｍA turn-off time tOFF (μs) 80 60 400 VDD = 20V Turn-on time tON 40 20 Ambient temperature Ta (°C) 1000 800 2 1 On-state voltage VON (V) RON – Ta 30 0 －1 Ambient temperature Ta (°C) 40 (A connection) 600 400 200 VDD = 20V 350 RL = 200Ω IF = 5ｍA 300 250 200 150 100 50 0 －40 －20 0 20 40 60 80 0 －40 100 Ambient temperature Ta (°C) －20 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2007-10-01 TLP197G RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01