TC4W66F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4W66F,TC4W66FU Dual Bilateral Switch The TC4W66 contains two independence circuits of bidirectional switches. When control input CONT is set to “H” level, the impedance between input and output of the switch becomes low and when it is set to “L” level, the switch becomes high. This can be applied for switching of analog signals and digital signals. TC4W66F Features • ON-resistance, RON 250 Ω (typ.) ................... VDD − VSS = 5 V TC4W66FU 110 Ω (typ.) ................... VDD − VSS = 10 V 70 Ω (typ.)..................... VDD − VSS = 15 V • OFF-resistance, ROFF ROFF (typ.) > 109 Ω Weight SOP8-P-1.27: 0.05 g (typ.) SSOP8-P-0.65: 0.02 g (typ.) Absolute Maximum Ratings Symbol Rating Unit DC supply voltage Characteristics VDD VSS − 0.5 to VSS + 20 V Control input voltage VC IN VSS − 0.5 to VDD + 0.5 V Switch I/O voltage VI/O VSS − 0.5 to VDD + 0.5 V Power dissipation PD 300 mW Potential difference across I/O during ON VI-VO ±0.5 V Control input current IC IN ±10 mA Operating temperature range Topr −40 to 85 °C Storage temperature Tstg −65 to 150 °C Lead temp./time TL 260°C/10 s Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TC4W66F TC4W66FU 1 2007-11-01 TC4W66F/FU Logic Diagram Pin Assignment (top view) (1/2 TC4W66F) Truth Table Control Impedance Between IN/OUT-OUT/IN (Note 1) 2 H 0.5 to 5 × 10 Ω L >10 Ω 9 Note 1: See static electrical characteristics. Operating Ranges (VSS = 0 V) Characteristics DC supply voltage Input/output voltage Symbol Test Condition Min Typ. Max Unit VDD ⎯ 3 ⎯ 18 V VDD/VOUT ⎯ 0 ⎯ VDD V Static Electrical Characteristics (in case not specifically appointed, VSS = 0 V) Characteristics Control input high voltage Control input low voltage On-state resistance VIH VIL RON ΔOn-state resistance (between any 2 switches) Input/output leakage current Quiescent device current Input current Symbol H level L level RONΔ IOFF IDD IIH IIL Test Test Condition V Circuit DD (V) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⏐IIS⏐ = 10 μA ⏐IIS⏐ = 10 μA 0< = VIS < = VDD RL = 10 kΩ Ta = −40°C Ta = 25°C Ta = 85°C Min Max Min Typ. Max Min Max 5 3.5 ⎯ 3.5 2.75 ⎯ 3.5 ⎯ 10 7.0 ⎯ 7.0 5.50 ⎯ 7.0 ⎯ 15 11.0 ⎯ 11.0 8.25 ⎯ 11.0 ⎯ 5 ⎯ 1.5 ⎯ 2.25 1.5 ⎯ 1.5 10 ⎯ 3.0 ⎯ 4.5 3.0 ⎯ 3.0 15 ⎯ 4.0 ⎯ 6.75 4.0 ⎯ 4.0 5 ⎯ 800 ⎯ 290 950 ⎯ 1200 10 ⎯ 210 ⎯ 120 250 ⎯ 300 15 ⎯ 140 ⎯ 85 160 ⎯ 200 5 ⎯ ⎯ ⎯ 10 ⎯ ⎯ ⎯ 10 ⎯ ⎯ ⎯ 6 ⎯ ⎯ ⎯ 15 ⎯ ⎯ ⎯ 4 ⎯ ⎯ ⎯ VIN = 18 V, VOUT = 0 V 18 ⎯ ±100 ⎯ ±0.1 ±100 ⎯ ±1000 VIN = 0 V, VOUT = 18 V 18 ⎯ ±100 ⎯ ±0.1 ±100 ⎯ ±1000 5 ⎯ 0.25 ⎯ 0.001 0.25 ⎯ 7.5 10 ⎯ 0.5 ⎯ 0.001 0.5 ⎯ 15 15 ⎯ 1.0 ⎯ 0.002 1.0 ⎯ 30 0.1 ⎯ 1.0 −0.1 ⎯ −1.0 ⎯ VIN = VDD, VSS* VIH = 18 V VIL = 0 V Unit V V Ω Ω nA 18 18 ⎯ ⎯ 2 0.1 −0.1 ⎯ ⎯ 10 −5 −10 −5 μA μA 2007-11-01 TC4W66F/FU Dynamic Electrical Characteristics (Ta = 25°C, VSS = 0 V, CL = 50 pF) Characteristics Phase difference between input to output Propagation delay time (CONTROL-OUT) Propagation delay time (CONTROL-OUT) Max control input repetition Rate −3dB cutoff frequency Symbol φI-O tpZL tpZH tpLZ tpHZ fmax (C) fmax (I-O) Test Circuit ⎯ ⎯ ⎯ ⎯ ⎯ Total harmonic distortion ⎯ ⎯ −50dB feed through frequency ⎯ −50dB crosstalk frequency ⎯ Crosstalk (CONTROL-OUT) Input capacitance Feed through capacitance ⎯ CIN CIN-OUT Test Condition CL = 50 pF RL = 1 kΩ CL = 50 pF RL = 1 kΩ CL = 50 pF RL = 1 kΩ CL = 50 pF RL = 1 kΩ CL = 50 pF (Note 1) RL = 10 kΩ VSS (V) VDD (V) Min Typ. Max Unit 0 5 ⎯ 15 40 0 10 ⎯ 8 20 0 15 ⎯ 5 15 0 5 ⎯ 55 120 0 10 ⎯ 25 40 0 15 ⎯ 20 30 0 5 ⎯ 45 80 0 10 ⎯ 30 70 0 15 ⎯ 25 60 0 5 ⎯ 10 ⎯ 0 10 ⎯ 12 ⎯ 0 15 ⎯ 12 ⎯ −5 5 ⎯ 30 ⎯ MHz −5 5 ⎯ 0.03 ⎯ % ns ns ns MHz f = 1 kHz (Note 2) ⎯ RL = 1 kΩ (Note 3) −5 5 ⎯ 600 ⎯ kHz ⎯ RL = 1 kΩ (Note 4) −5 5 ⎯ 1 ⎯ MHz RIN = 1 kΩ 0 5 ⎯ 200 ⎯ ROUT = 10 kΩ 0 10 ⎯ 400 ⎯ CL = 15 pF 0 15 ⎯ 600 ⎯ ⎯ ⎯ Control input ⎯ 5 7.5 ⎯ Switch I/O ⎯ 10 ⎯ ⎯ 0.5 ⎯ ⎯ ⎯ Note 1: Since wave of ±2.5 Vp-p shall be used for VIS and the frequency of 20 ℓog 10 mV pF pF VOS = −3dB shall be fmax. VIS Note 2: VIS shall be sine wave of ±2.5 Vp-p. Note 3: Sine wave of ±2.5 Vp-p shall be used for VIS and the frequency of 20 ℓog 10 VOUT VIS = −50dB shall be VOUT VIS = −50dB shall be feed-through. Note 4: Sine wave of ±2.5 Vp-p shall be used for VIS and the frequency of 20 ℓog 10 crosstalk. 3 2007-11-01 TC4W66F/FU 1. tpLH, tpHL I/O-O/I 2. tpZL, tpZH, tpLZ, tpHZ Control-O/I 3. RON 4. fmax (C) 4 2007-11-01 TC4W66F/FU 5. Crosstalk (switch I/O) 6. Crosstalk (control input) 7. Total Harmonic Distortion, fmax (I/O-O/I), Feedthrough (switch OFF) 2.5 V I/O IN. 0V −2.5 V 1 f 5 2007-11-01 TC4W66F/FU Package Dimensions Weight: 0.05 g (typ.) 6 2007-11-01 TC4W66F/FU Package Dimensions Weight: 0.02 g (typ.) 7 2007-11-01 TC4W66F/FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-11-01