New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR30H90CT MBR30H100CT PIN 1 PIN 2 PIN 3 CASE 3 1 MBRF30H90CT MBRF30H100CT PIN 1 2 1 3 PIN 2 PIN 3 TO-263AB K 2 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 1 MBRB30H90CT MBRB30H100CT PIN 1 PIN 2 FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020C, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC K HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 15 A x 2 VRRM 90 V, 100 V IFSM 275 A VF 0.67 V IR 5.0 µA TJ max. 175 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H90CT MBR30H100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V total device per diode IF(AV) 30 15 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 275 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Maximum average forward rectified current (Fig. 1) Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Document Number: 88791 Revision: 12-Nov-07 dV/dt 10000 V/µs TJ, TSTG - 65 to + 175 °C VAC 1500 V www.vishay.com 1 New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 15 A IF = 15 A IF = 30 A IF = 30 A Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (1) SYMBOL VALUE UNIT TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VF 0.82 0.67 0.93 0.80 V TJ = 25 °C TJ = 125 °C IR 5.0 6.0 µA mA Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF MBRB UNIT RθJC 1.9 4.6 1.9 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF30H100CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB30H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB30H100CT-E3/81 1.35 81 800/reel Tape reel TO-220AB MBR30H100CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF30H100CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB MBRB30H100CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB30H100CTHE3/81 (1) 1.35 81 800/reel Tape reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 300 Peak Forward Surge Current (A) Average Forward Current (A) 35 30 25 20 MBRF30H90CT - MBRF30H100CT 15 MBR30H90CT - MBR30H100CT MBRB30H90CT - MBRB30H100CT 10 5 0 TJ = TJ max. 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve Per Diode Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 Document Number: 88791 Revision: 12-Nov-07 New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor 10000 TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 1000 100 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10000 TJ = 175 °C 1000 TJ = 150 °C TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 20 40 60 80 100 10 1 0.1 0.01 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88791 Revision: 12-Nov-07 www.vishay.com 3 New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 88791 Revision: 12-Nov-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1