DIODES US1J

US1A - US1M
1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
Features
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Recovery Time for High Efficiency
Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
B
SMA
A
C
Mechanical Data
D
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Mounting Position: Any
J
G
E
H
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.63
D
0.15
0.31
E
4.80
5.59
G
0.10
0.20
H
0.76
1.52
J
2.01
2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
US1A
US1B
US1D
US1G
US1J
US1K
US1M
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
30
A
Forward Voltage Drop
@ IF = 1.0A
VFM
@ TA = 25C
@ TA = 100C
IRM
Average Rectified Output Current
Peak Reverse Current
at Rated DC Blocking Voltage
@ TT = 75C
1.0
1.3
1.7
5.0
100
V
A
Reverse Recovery Time (Note 2)
trr
50
75
ns
Typical Junction Capacitance (Note 1)
Cj
20
10
pF
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
Notes:
RJT
30
C/W
Tj, TSTG
-65 to +150
C
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.
DS16008 Rev. B1-2
1 of 2
US1A - US1M
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
1.0
0.5
0
25
50
75
100
125
150
10
US1A - US1D
US1G
1.0
US1J - US1M
0.1
Tj - 25°C
Pulse Width = 300µs
0.01
0
40
Single Half Sine-Wave
(JEDEC Method)
30
20
10
Tj = 150°C
0
1
10
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (µA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.4
1000
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0.01
0
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS16008 Rev. B1-2
2 of 2
US1A - US1M