VISHAY SB5H100

SB5H90 & SB5H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
DO-201AD
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
90 V, 100 V
IFSM
200 A
VF
0.70 V
IR
200 µA
TJ max.
175 °C
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB5H90
SB5H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
Maximum average forward rectified current at TC = 80 °C
IF(AV)
5.0
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
IRRM
1.0
A
Storage temperature range
TSTG
- 55 to + 175
°C
TJ
175
°C
Maximum operating junction temperature
Document Number: 88722
Revision: 19-May-08
100
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
V
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SB5H90 & SB5H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
IF = 5.0 A
IF = 5.0 A
Maximum reverse current at rated VR (2)
SYMBOL
SB5H90
SB5H100
UNIT
TA = 25 °C
TA = 125 °C
VF
0.80
0.70
V
TA = 25 °C
TA = 125 °C
IR
200
10
µA
mA
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB5H90
RθJA
RθJL
Maximum thermal resistance (1)
SB5H100
25
8
UNIT
°C/W
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB5H100-E3/54
1.1
54
1400
13" diameter paper tape and reel
SB5H100-E3/73
1.1
73
1000
Ammo pack packaging
SB5H100HE3/54 (1)
1.1
54
1400
13" diameter paper tape and reel
SB5H100HE3/73 (1)
1.1
73
1000
Ammo pack packaging
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
240
Peak Forward Surge Current (A)
Average Forward Current (A)
6.0
5.0
4.0
3.0
2.0
1.0
0
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
200
160
120
80
40
0
0
25
50
75
100
125
150
175
200
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88722
Revision: 19-May-08
SB5H90 & SB5H100
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
0.1
0
0.1
10
1
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Transient Thermal Impedance
10 000
10 000
1000
Junction Capacitance (pF)
Instantaneous Reverse Current (µA)
10
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
0.1
1000
100
TJ = 25 °C
10
0.01
20
40
60
80
0.1
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88722
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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