DIODES MBRB1540CT

MBRB1530CT - MBRB1545CT
15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 150A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
E
A
G
4
H
J
B
1
2
D2PAK
3
M
Mechanical Data
·
·
·
·
·
·
D
Case: D PAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Approx. Weight: 1.7 grams
Mounting Position: Any
Marking: Type Number
K
2
C
L
PIN 1
PIN 2 & 4
PIN 3
Maximum Ratings and Electrical Characteristics
Min
Max
A
9.65
10.69
B
14.60
15.88
C
0.51
1.14
D
2.29
2.79
E
4.37
4.83
G
1.14
1.40
H
1.14
1.40
J
8.25
9.25
K
0.30
0.64
L
2.03
2.92
M
2.29
2.79
Dim
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 105°C
Symbol
MBRB
1530CT
MBRB
1535CT
MBRB
1540CT
MBRB
1545CT
Unit
VRRM
VRWM
VR
30
35
40
45
V
VR(RMS)
21
24.5
28
31.5
V
IO
15
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage, per Element (Note 4)
VFM
0.7
V
dv/dt
10,000
V/µs
IRM
0.1
15
mA
@ IF = 7.5A
Voltage Rate of Change
Peak Reverse Current
at Rated DC Blocking Voltage
@TA = 25°C
@ TA = 100°C
Maximum Recovery Time (Note 3)
trr
30
ns
Typical Junction Capacitance (Note 2)
Cj
250
pF
RqJT
3.0
K/W
Tj, TSTG
-65 to +150
°C
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Notes:
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A (see figure 1).
4. 300µs pulse width, 2% duty cycle.
DS13015 Rev. B-2
1 of 2
MBRB1530CT-MBRB1545CT
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
20
16
12
8
4
0
0
50
100
100
10
1.0
Tj = 25°C
Pulse width = 300 µs
2% duty cycle
0.1
150
0.2
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics per Element
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
1000
8.3 ms single half-sine-wave
JEDEC method
250
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
300
200
150
100
50
Tj = 25°C
f = 1MHz
100
10
0
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1
0.1
100
1.0
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
100
10
Tj = 100°C
Tj = 75°C
1.0
Tj = 25°C
0.1
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics, per element
DS13015 Rev. B-2
2 of 2
MBRB1530CT-MBRB1545CT