ONSEMI BC556B

BC556B, BC557A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Collector - Emitter Voltage
Value
VCEO
BC556
BC557
BC558
Collector - Base Voltage
Vdc
VCBO
Vdc
−80
−50
−30
VEBO
−5.0
Vdc
IC
mAdc
ICM
−100
−200
Base Current − Peak
IBM
−200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Collector Current − Continuous
Collector Current − Peak
Operating and Storage Junction
Temperature Range
3
EMITTER
−65
−45
−30
BC556
BC557
BC558
Emitter - Base Voltage
2
BASE
Unit
1
2
TO−92
CASE 29
STYLE 17
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BC
55xx
AYWW G
G
BC55x
= Device Code
x = 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 2
1
Publication Order Number:
BC556B/D
BC556B, BC557A, B, C, BC558B, C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−65
−45
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
−
−
−0.7
−1.0
−
−
−0.55
−
−0.62
−0.7
−0.7
−0.82
−
−
−
280
320
360
−
−
−
−
3.0
6.0
−
−
−
2.0
2.0
2.0
10
10
10
125
125
240
450
−
−
−
−
900
260
500
900
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −100 mAdc)
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector−Emitter Leakage Current
(VCES = −40 V)
(VCES = −20 V)
(VCES = −20 V, TA = 125°C)
V(BR)CEO
BC556
BC557
BC558
V
V(BR)CBO
BC556
BC557
BC558
V
V(BR)EBO
BC556
BC557
BC558
V
ICES
BC556
BC557
BC558
BC556
BC557
BC558
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 V)
(IC = −2.0 mAdc, VCE = −5.0 V)
(IC = −100 mAdc, VCE = −5.0 V)
hFE
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 V,
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Cob
MHz
NF
BC556
BC557
BC558
dB
hfe
BC557
A Series Device
B Series Devices
C Series Devices
−
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
http://onsemi.com
2
pF
BC556B, BC557A, B, C, BC558B, C
BC557/BC558
−1.0
1.5
TA = 25°C
−0.9
VCE = −10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −200 mA
IC = −100 mA
IC = −20 mA
−0.4
0
−0.02
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−10 −20
−0.1
−1.0
IB, BASE CURRENT (mA)
−0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−10
−1.0
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base−Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
−50 −100
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−20 −30 −40
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC556B, BC557A, B, C, BC558B, C
BC556
TJ = 25°C
VCE = −5.0 V
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
−1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
0.2
VCE(sat) @ IC/IB = 10
0
−0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
−2.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
−1.6
−1.2
IC =
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0
−10
−20
−1.0
−1.4
−1.8
−2.6
−3.0
−0.2
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
−0.1 −0.2
−0.5
−1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
−0.5 −1.0
−50
−5.0 −10 −20
−2.0
IC, COLLECTOR CURRENT (mA)
−100 −200
Figure 10. Base−Emitter Temperature Coefficient
40
6.0
−55°C to 125°C
−2.2
Figure 9. Collector Saturation Region
20
qVB for VBE
VCE = −5.0 V
500
200
100
50
20
−100
−1.0
−10
IC, COLLECTOR CURRENT (mA)
−50 −100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
BC556B, BC557A, B, C, BC558B, C
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
P(pk)
SINGLE PULSE
t1
t2
0.03
DUTY CYCLE, D = t1/t2
0.02
0.01
ZqJC(t) = (t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
Figure 13. Thermal Response
−200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
−100
TA = 25°C
−50
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
TJ = 25°C
BC558
BC557
BC556
−10
−5.0
−2.0
−1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
http://onsemi.com
5
10
BC556B, BC557A, B, C, BC558B, C
DEVICE ORDERING INFORMATION
Package
Shipping†
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
TO−92
2000 / Tape & Reel
BC558BRLG
TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BRL1
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
Device
BC556B
BC556BG
BC556BZL1
BC556BZL1G
BC557AZL1
BC557AZL1G
BC557B
BC557BG
BC557BRL1
BC557BRL1G
BC557BZL1
BC557BZL1G
BC557C
BC557CG
BC557CZL1
BC557CZL1G
BC558BRL
BC558BRL1G
BC558BZL1
BC558BZL1G
BC558CZL1
BC558CZL1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
BC556B, BC557A, B, C, BC558B, C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
7
For additional information, please contact your
local Sales Representative.
BC556B/D