NZQA5V6AXV5 Series Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features • • • • • • • • Low Clamping Voltage Small SOT−553 SMT Package Stand Off Voltage: 3 V Low Leakage Current Four Separate Unidirectional Configurations for Protection ESD Protection: IEC61000−4−2: Level 4 ESD Protection MILSTD 883C − Method 3015−6: Class 3 Complies to USB 1.1 Low Speed & Full Speed Specifications These are Pb−Free Devices • • • • Provides Protection for ESD Industry Standards: IEC 61000, HBM Protects Four Lines Against Transient Voltage Conditions Minimize Power Consumption of the System Minimize PCB Board Space • • • • • Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers Cellular and Portable Equipment http://onsemi.com 1 5 2 3 4 SOT−553 CASE 463B PLASTIC Benefits MARKING DIAGRAM Typical Applications xx M G G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Power Dissipation (Note 1) Steady State Power − 1 Diode (Note 2) Thermal Resistance, Junction−to−Ambient Above 25°C, Derate PPK PD RqJA 20 380 327 3.05 W mW °C/W mW/°C TJmax TJ Tstg 150 −55 to +150 °C °C TL 260 °C Maximum Junction Temperature Operating Junction and Storage Temperature Range Lead Solder Temperature (10 seconds duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current per Figure 5. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 7 1 xx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NZQA5V6AXV5T1 Package Shipping† SOT−553* 4000/Tape & Reel NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel NZQA6V8AXV5T1 SOT−553* 4000/Tape & Reel NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel NZQA6V8AXV5T3 SOT−553* 16000/Tape & Reel NZQA6V8AXV5T3G SOT−553* 16000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *This package is inherently Pb−Free. Publication Order Number: NZQA5V6AXV5/D NZQA5V6AXV5 Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IF Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VC VBR VRWM Working Peak Reverse Voltage VBR V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IPP Uni−Directional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C) Breakdown Voltage VBR @ 1 mA (V) Leakage Current IRM @ VRM VC Max @ IPP (Note 4) Typ Capacitance @ 0 V Bias (pF) (Note 3) Typ Capacitance @ 3 V Bias (pF) (Note 3) VRWM IRWM (mA) VC (V) IPP (A) Typ Max Typ Max 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5 Device Device Marking Min Nom Max NZQA5V6AXV5 5P 5.3 5.6 NZQA6V8AXV5 6H 6.47 6.8 VC Per IEC61000−4−2 (Note 5) Figures 1 and 2 (See Below) 3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 http://onsemi.com 2 NZQA5V6AXV5 Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 3 80 NZQA5V6AXV5 Series TYPICAL ELECTRICAL CHARACTERISTICS − NZQA6V8AXV5 % OF RATED POWER OR IPP 10 1 1 10 100 1000 90 80 70 60 50 40 30 20 10 0 0 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Width Figure 7. Power Derating Curve 0.16 14 0.14 12 0.04 0.02 2 0.12 150 TA = 25°C 10 0.10 8 0.08 6 0.06 0 25 t, TIME (ms) TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY IR, REVERSE LEAKAGE (mA) 110 100 4 −60 −40 −20 0 20 40 80 60 0 100 0 1 2 3 4 T, TEMPERATURE (°C) BIAS VOLTAGE (V) Figure 8. Reverse Leakage versus Temperature Figure 9. Capacitance 1 IF, FORWARD CURRENT (A) Ppk, PEAK SURGE POWER (W) 100 0.1 0.01 0.001 TA = 25°C 0.6 0.8 1.0 1.2 1.4 VF, FORWARD VOLTAGE (V) Figure 10. Forward Voltage http://onsemi.com 4 1.6 1.8 5 6 NZQA5V6AXV5 Series PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B−01 ISSUE B D −X− 5 A 4 1 e 2 E −Y− 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L HE c 5 PL 0.08 (0.003) DIM A b c D E e L HE M X Y MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 MIN 0.50 0.17 0.08 1.50 1.10 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.059 0.063 MIN 0.020 0.007 0.003 0.059 0.043 MAX 0.024 0.011 0.007 0.067 0.051 0.012 0.067 STYLE 2: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NZQA5V6AXV5/D