ONSEMI MBR16100CT

MBR16100CT
SWITCHMODE]
Power Rectifier
Features and Benefits
•
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss / High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction
16 A Total (8.0 A Per Diode Leg)
Pb−Free Package is Available*
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SCHOTTKY BARRIER
RECTIFIER
16 AMPERES, 100 VOLTS
Applications
1
• Power Supply − Output Rectification
• Power Management
• Instrumentation
2, 4
3
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
PLASTIC
STYLE 6
1
2
AYWW
B16100G
AKA
3
A
Y
WW
B16100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
MBR16100CT
MBR16100CTG
Package
Shipping
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 5
1
Publication Order Number:
MBR16100CT/D
MBR16100CT
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(TC = 166°C)
Per Diode
Per Device
IF(AV)
Peak Repetitive Forward Current
(Square Wave, 20 kHz)
TC = 165°C
IFRM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
A
8.0
16
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance,
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
Symbol
Value
Unit
RqJC
RqJA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 8.0 A, TJ = 125°C)
(iF = 8.0 A, TJ = 25°C)
(iF = 16 A, TJ = 125°C)
(iF = 16 A, TJ = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
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2
Min
Typical
Max
−
−
−
−
0.56
0.68
0.67
0.79
0.60
0.74
0.69
0.84
−
−
0.95
0.0013
5.0
0.1
Unit
V
mA
MBR16100CT
100
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD
VOLTAGE (AMPS)
100
10
125°C
75°C
1
175°C
0.1
0
0.1
TJ = 25°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
125°C
175°C
0.1
1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
125°C
75°C
1E−5
1E−6
1E−7
TJ = 25°C
0
10
20
30
40
50
60
70
80
90
IR, REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
1E−1
175°C
1E−4
1E−2
1E−3
8.0
6.0
4.0
2.0
160
165
170
0.8
0.9
1
TJ = 25°C
1E−5
1E−6
I F (AV) , AVERAGE FORWARD CURRENT (AMPS)
I F (AV) , AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
155
0.7
0
10
20
30
40
50
60
70
80
90
100
Figure 4. Typical Capacitance Per Diode
12
150
0.6
VR, REVERSE VOLTAGE (VOLTS)
dc
145
0.5
75°C
1E−4
1E−7
100
16
0
140
0.4
125°C
Figure 3. Typical Reverse Current Per Diode
10
0.3
175°C
VR, REVERSE VOLTAGE (VOLTS)
14
0.2
Figure 2. Maximum Forward Voltage Per Diode
1E−1
1E−3
0.1
TJ = 25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode
1E−2
75°C
1
175
180
16
RATED VOLTAGE APPLIED
14
RqJA = 16° C/W
RqJA = 60° C/W
(NO HEATSINK)
dc
12
10
8.0
SQUARE WAVE
dc
6.0
4.0
2.0
0
0
TC, CASE TEMPERATURE (C°)
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case Per Leg
Figure 6. Current Derating, Ambient Per Leg
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3
175
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1400
TJ = 175°C
1200
SQUARE WAVE
C, CAPACITANCE (pF)
P
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
MBR16100CT
dc
1000
800
600
400
200
0
2
4
6
8
0
10 12 14 16 18 20 22 24 26 28 30
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Forward Power Dissipation
Figure 8. Typical Capacitance Per Diode
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4
MBR16100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
SWITCHMODE is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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USA/Canada
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Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR16100CT/D