ONSEMI MBR120VLSFT1G

MBR120VLSFT1
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
Features
•
•
•
•
•
•
•
Guardring for Stress Protection
Optimized for Very Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C;
Human Body Model, 3B
Pb−Free Packages are Available
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics
L2VMG
G
• Reel Options: MBR120VLSFT1 = 3,000 per 7″ reel/8 mm tape
•
•
•
•
•
•
•
MBR120VLSFT3 = 10,000 per 13″ reel/8 mm tape
Device Marking: L2V
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
L2V = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping †
MBR120VLSFT1
SOD−123FL
3000/Tape & Reel
MBR120VLSFT1G
SOD−123FL
(Pb−Free)
3000/Tape & Reel
MBR120VLSFT3
SOD−123FL 10000/Tape & Reel
MBR120VLSFT3G
SOD−123FL 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 2
1
Publication Order Number:
MBR120VLSFT1/D
MBR120VLSFT1
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
20
V
Average Rectified Forward Current
(Rated VR) TL = 119°C
IF(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
45
A
Storage Temperature Range
Tstg
−65 to +125
°C
Operating Junction Temperature
TJ
−65 to +125
°C
dv/dt
1000
V/ms
Voltage Rate of Change (Rated VR)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
Symbol
Value
Unit
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 0.1 A)
(IF = 0.5 A)
(IF = 1.0 A)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage)
IR
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
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2
TJ = 255C
TJ = 855C
0.275
0.315
0.340
0.205
0.270
0.300
0.60
15
Unit
V
mA
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR120VLSFT1
10
TJ = 125°C
TJ = 85°C
TJ = 25°C
1
TJ = −55°C
0.1
0.1
0
0.2
0.3
0.4
0.6
0.5
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
TJ = 125°C
1
TJ = 85°C
TJ = 25°C
0.1
0.1
0.4
0.5
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 2. Maximum Forward Voltage
100E−3
100E−3
IR, REVERSE CURRENT (AMPS)
0.3
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
TJ = 125°C
10E−3
TJ = 85°C
1E−3
TJ = 25°C
100E−6
0
5
10
15
10E−3
TJ = 85°C
1E−3
TJ = 25°C
20
10E−6
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
freq = 20 kHz
dc
1.6
1.4
PFO, AVERAGE POWER DISSIPATION (WATTS)
VR, REVERSE VOLTAGE (VOLTS)
1.8
SQUARE
WAVE
1.2
1.0
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
25
TJ = 125°C
100E−6
10E−6
IO, AVERAGE FORWARD CURRENT (AMPS)
0.2
45
65
85
105
125
TL, LEAD TEMPERATURE (°C)
0.5
dc
SQUARE
WAVE
Ipk/Io = p
0.4
Ipk/Io = 5
0.3
Ipk/Io = 10
0.2
Ipk/Io = 20
0.1
0
0
Figure 5. Current Derating
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
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3
1.6
MBR120VLSFT1
500
125
TJ, DERATED OPERATING
TEMPERATURE (°C)
C, CAPACITANCE (pF)
TJ = 25°C
400
300
200
100
0
0
2
4
6
8
10
12
14
16
18
120
115
RqJA = 25.6°C/W
110
105
130°C/W
100
95
90
235°C/W
85
80
324.9°C/W
75
70
65
20
400°C/W
0
2.0
4.0
6.0
8.0
10
12
14
16
18
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating*
20
r(t), TRANSIENT THERMAL RESISTANCE
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100
0.2
0.1
0.05
P(pk)
10
0.01
t1
t2
DUTY CYCLE, D = t1/t2
1
SINGLE PULSE
qJA = 321.8 °C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
Figure 9. Thermal Response
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4
1
10
100
1000
MBR120VLSFT1
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
E
q
D
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
b
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
1.00
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
HE
q
c
SOLDERING FOOTPRINT*
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
1.22
0.048
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
MBR120VLSFT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
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6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MBR120VLSFT1/D