TOREX 0790_XP162A01B5PR

Power MOS FET
◆P-Channel Power MOS FET
■Applications
◆DMOS Structure
●Notebook PCs
◆Low On-State Resistance: 0.25Ω (max)
●Cellular and portable phones
●On-board power supplies
◆Ultra High-Speed Switching
●Li-ion battery systems
◆SOT-89 Package
■General Description
■Features
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.25Ω(Vgs=-4.5V)
■Pin Configuration
1
Ｇ
2
Ｄ
3
Ｓ
: Rds(on)=0.4Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting : SOT-89
■Pin Assignment
PIN
NUMBER
PIN
NAME
1
G
Gate
2
D
Drain
3
S
Source
FUNCTION
SOT-89
（TOP VIEW）
11
■Equivalent Circuit
■Absolute Maximum Ratings
Ta=25:
1
2
P-Channel MOS FET
(1 device built-in)
3
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Gate-Source Voltage
Vdss
-20
V
Vgss
±12
V
Drain Current (DC)
Id
-2
A
Drain Current (Pulse)
Idp
-6
A
Reverse Drain Current
Idr
-2
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150
:
Note: When implemented on a ceramic PCB
870
XP162A01B5PR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Ta=25:
MIN
TYP
MAX
-10
UNITS
µA
±10
µA
V
Ω
SYMBOL
Idss
CONDITIONS
Vds=-20V, Vgs=0V
Gate-Source Leakage Current
Igss
Gate-Source Cut-off Voltage
Vgs(off)
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=-1A, Vgs=-4.5V
Id=-1A, Vgs=-2.5V
0.19
0.3
Forward Transfer Admittance
(note)
Yfs
Id=-1A, Vds=-10V
2.5
Body Drain Diode
Forward Voltage
Vf
If=-2A, Vgs=0V
-0.85
-1.1
V
SYMBOL
CONDITIONS
TYP
MAX
UNITS
-0.5
0.25
0.4
Ω
S
Note: Effective during pulse test.
Dynamic Characteristics
PARAMETER
Ta=25:
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
MIN
Vds=-10V, Vgs=0V
f=1MHz
320
pF
180
pF
pF
65
Switching Characteristics
Ta=25:
PARAMETER
SYMBOL
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
Fall Time
td (off)
tf
CONDITIONS
MIN
Vgs=-5V, Id=-1A
Vdd=-10V
TYP
MAX
UNITS
10
ns
15
ns
40
50
ns
ns
Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
Thermal Resistance
(channel-ambience)
Rth (ch-a)
Implement on a ceramic PCB
MIN
TYP
62.5
MAX
UNITS
11
:/W
871
XP162A01B5PR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25:
-6
-5V
-4.5V
-5
Pulse Test, Vds=-10V
-6
Topr＝25℃
-3V
-5
Drain Current:Id (A)
Drain Current:Id (A)
-4V
-3.5V
-4
-2.5V
-3
-2
-2V
-1
-1
-2
0
-3
-3
-1
-4
-5
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25:
Pulse Test, Ta=25:
10
Drain-Source On-State Resistance
:Rds (on) (Ω)
Drain-Source On-State Resistance
:Rds (on) (Ω)
-2
-2
Drain-Source Voltage:Vds (V)
0.5
0.4
Id＝-1A
0.3
-2A
0.2
0.1
0
1
Vgs＝-2.5V
-4.5V
0.1
0
-2
-4
-6
-8
-10
0
-1
-2
-3
-4
-5
-6
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Pulse Test
0.8
0.6
Id＝-2A
0.4
Vgs＝-2.5V
-1A
0.2
-1A,-2A
0
-60
-4.5V
-30
0
30
60
90
Ambient Temp.:Topr (:)
Vds=-10V, Id=-1mA
0.6
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
1
Drain-Source On-State Resistance
:Rds (on) (Ω)
125℃
0
0
872
-55℃
-3
-1
Vgs＝-1.5V
0
11
-4
0.4
0.2
0.0
-0.2
-0.4
-0.6
120
150
-60
-30
0
30
60
90
Ambient Temp.:Topr (:)
120
150
XP162A01B5PR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
SWITCHING TIME vs. DRAIN CURRENT
Vgs=0V, f=1MHz
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≤1%
1000
10000
Switching Time:t (ns)
Capacitance:C (pF)
tf
1000
Ciss
Coss
100
td（off）
100
tr
10
td（on）
Crss
1
10
0
-5
-10
-15
-20
-0.01
-0.1
Drain-Source Voltage:Vds (V)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-2A
-10
Pulse Test
-6
Reverse Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
-10
-1
Drain Current:Id (A)
-8
-6
-4
-2
-5
Vgs＝-4.5V
-4
-3
-2.5V
-2
0,4.5V
-1
0
0
0
5
10
0
15
Gate Charge:Qg (nc)
-0.2
-0.4
-0.6
-0.8
-1
Source-Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance:γs(t)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB)
10
11
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
873