### DIODES ZTX604

```ZTX604
ZTX605
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX604
MIN.
Static Forward
hFE
Current Transfer Ratio
2K
5K
2K
0.5K
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ZTX605
MAX.
100K
MIN.
2K
5K
2K
0.5K
UNIT
CONDITIONS.
MAX.
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
100K
150
MHz
IC=100mA, VCE=10V
f=20MHz
90 Typical
pF
VEB=500mV, f=1MHz
15 Typical
pF
VCB=10V, f=1MHz
ton
0.5 Typical
µs
toff
1.6 Typical
µs
IC=500mA, VCE=10V
IB1=IB2=0.5mA
Maximum Power Dissipation (W)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
1.0
RS = 20KΩ
RS = 100KΩ
RS = 1MΩ
0.8 RS = ∞
ISSUE 1  MARCH 94
FEATURES
* 120 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
C
B
PARAMETER
SYMBOL
ZTX604
ZTX605
0
10
100
200
VCE - Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Power(max ) − Power(act)
T amb (max ) =
0.0057
+25° C
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-213
ZTX605
UNIT
V
Collector-Base Voltage
VCBO
120
140
Collector-Emitter Voltage
VCEO
100
120
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
PARAMETER
SYMBOL
ZTX604
V
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
140
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
100
120
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
10
V
IE=100µA
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=100V
VCB=120V
VCB=100V,Tamb=100°C
VCB=120V,Tamb=100°C
0.1
µA
VEB=8V
µA
VCES=100V
VCES=120V
MIN.
1
ZTX604
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
DC Conditions
0.2
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
0.6
0.4
ZTX604
ZTX605
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
MAX.
0.01
10
ZTX605
MIN.
MAX.
0.01
Emitter Cut-Off
Current
IEBO
0.1
Colllector-Emitter
Cut-Off Current
ICES
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.5
1.0
1.5
V
V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
1.7
V
IC=1A, VCE=5V*
3-212
10
ZTX604
ZTX605
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX604
MIN.
Static Forward
hFE
Current Transfer Ratio
2K
5K
2K
0.5K
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ZTX605
MAX.
100K
MIN.
2K
5K
2K
0.5K
UNIT
CONDITIONS.
MAX.
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
100K
150
MHz
IC=100mA, VCE=10V
f=20MHz
90 Typical
pF
VEB=500mV, f=1MHz
15 Typical
pF
VCB=10V, f=1MHz
ton
0.5 Typical
µs
toff
1.6 Typical
µs
IC=500mA, VCE=10V
IB1=IB2=0.5mA
Maximum Power Dissipation (W)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
1.0
RS = 20KΩ
RS = 100KΩ
RS = 1MΩ
0.8 RS = ∞
ISSUE 1  MARCH 94
FEATURES
* 120 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
C
B
PARAMETER
SYMBOL
ZTX604
ZTX605
0
10
100
200
VCE - Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Power(max ) − Power(act)
T amb (max ) =
0.0057
+25° C
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-213
ZTX605
UNIT
V
Collector-Base Voltage
VCBO
120
140
Collector-Emitter Voltage
VCEO
100
120
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
PARAMETER
SYMBOL
ZTX604
V
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
140
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
100
120
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
10
V
IE=100µA
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=100V
VCB=120V
VCB=100V,Tamb=100°C
VCB=120V,Tamb=100°C
0.1
µA
VEB=8V
µA
VCES=100V
VCES=120V
MIN.
1
ZTX604
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
DC Conditions
0.2
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
0.6
0.4
ZTX604
ZTX605
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
MAX.
0.01
10
ZTX605
MIN.
MAX.
0.01
Emitter Cut-Off
Current
IEBO
0.1
Colllector-Emitter
Cut-Off Current
ICES
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.5
1.0
1.5
V
V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
1.7
V
IC=1A, VCE=5V*
3-212
10
ZTX604
ZTX605
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
VCE(sat) - (Volts)
1.6
1.4
2.5
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
0.01
1
10
1.0
0.5
0.001
0.01
0.1
1
hFE v IC
1.8
2.2
1.8
VBE - (Volts)
1.6
1.4
1.2
IC/IB=100
1.0
1.6
1.4
1.2
1.0
0.8
0.8
0.6
0.6
0.01
0.1
1
0.01
0.1
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
1.0
ZT
X6
04
ZTX605
0.01
100
1
IC - Collector Current (Amps)
VBE(sat) v IC
10
VCE=5V
0.4
10
IC - Collector Current (Amps)
D.C.
1s
100ms
10ms
1.0ms
100µs
10
-55°C
+25°C
+100°C
2.0
0.4
IC - Collector Current (Amps)
1.5
VCE(sat) v IC
-55°C
+25°C
+100°C
+175°C
1
VCE=5V
2.0
IC - Collector Current (Amps)
2.2
0.1
-55°C
+25°C
+100°C
IC - Collector Current (Amps)
2.0
VBE(sat) - (Volts)
0.1
hFE - Gain normalised to 1 Amp
1.8
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
3-214
10
```