INTEGRATED CIRCUITS SA2410 2.45GHz RF power amplifier and T/R switch Preliminary specification IC17 Data Handbook 1997 Sep 09 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 GND GND GND GND GND GND V D2 28 2 26 25 23 GND 26 GND 21 GND 5 20 GND VGC2 6 19 GND GND 7 18 VGPA 8 17 GND 2 VD3 3 GND 4 VGC1 SWOUT1 10 11 12 13 14 19 16 VCTRL1 9 SWOUT2 PAOUT 1 VCTRL2 24 VD4 V OSC • Gain=29dB (typ) • Attenuation range=16dB (typ) • LQFP–32 package 29 GND IM3<–30dBc IM5<–50dBc 30 GND • VCC=3V–5.5V • No negative bias needed • ICC=125mA (typ) @ 3.3V • POUT=18.5 dB(typ) 31 SWIN FEATURES 32 VSW The SA2410 is a GaAs monolithic power amplifier with an integrated T/R switch designed to meet requirements for 802.11 (WLAN). The SA2410 uses an on–chip 4 GHz oscillator to generate the negative bias, thus eliminating the need for a negative supply. It operates from 3V to 5.5V and consumes 125 mA with an output power of 18.5 dB (typ). It is suitable for other 2.45 GHz ISM band applications. PAIN DESCRIPTION VNEG SR01422 APPLICATIONS Figure 1. Pin Configuration • 802.11 WLAN • 2.4–2.5 GHz ISM BAND ORDERING INFORMATION DESCRIPTION 32–Pin Plastic Thin Quad Flat Package TEMPERATURE RANGE ORDER CODE DWG # –40° C+85°C SA2410 SOT401–1 GENERAL SPECIFICATIONS Symbol T Parameter Condition Temperature VCC Supply V ICC Supply I Min Max Unit –40 +85 C 3 5.5 V 3.3 volts Typ 125 mA Power Amplifier fRF Frequency Range 2.4 IM3 IM3 2 tones 30 IM5 IM5 2 tones 50 Ton Transmit power on Toff Xmit power down Gain Small signal gain Pout Output power Eff. Efficiency 2.5 dBc dBc Including neg. supply 2 2 IM3=30dBc IM5=50dBc [email protected] volts 17.5 GHz µs µs 29 dB 18.5 dBm 25 % ∆ Gt1 Gain variation with temp –40 to +85°C "3.5 dB ∆ Gt2 Gain variation with temp 0–70°C "2.0 dB ∆ Gr Ripple 2.45"0.05 GHz "1 dB Gain variation with supply 3.3 volts"0.3 V 0.5 dB ∆ Gvd 1997 Sep 09 2 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch Symbol Parameter Condition SA2410 Min Typ Max Unit Negative voltage supply ton Power on time 10 4 GHz spur Xmit Mode Parameter Condition 100 TBD nS dBm Linear Gain Control Symbol Min Typ Max Unit VGC Gain control voltage TBD CGC Input C at gain pin TBD Volt pF GCR Attenuation range 16 dB Transmit/receive switch Symbol Typ Max Unit Ltx Parameter Insertion loss Tx 1.3 2 dB 1.3 2 dB 400 nS Lrx Insertion loss Rx tsw Switch response time ISOPA Isolation switch to PA Condition Min 30 dB Ω Zin Input impedance 50 Zout Output impedance 50 Ω 19 dB ISOSW Switch Isolation 17 PA Attenuator PAOUT PAIN VGPA VNEG Negative Power Supply SWOUT1 Switch SWOUT2 SWIN SR01423 Figure 2. Block Diagram 1997 Sep 09 3 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm 1997 Sep 09 4 SA2410 SOT401-1 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch NOTES 1997 Sep 09 5 SA2410 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Formative or in Design This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. Preliminary Specification Preproduction Product This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product Specification Full Production This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. Copyright Philips Electronics North America Corporation 1996 All rights reserved. Printed in U.S.A. Date of release: 09–97 Document order number: 1997 Sep 09 6 9397 750 03299