PHILIPS BGD885_01

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D248
BGD885
860 MHz, 17 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
FEATURES
BGD885
PINNING - SOT115D
• Excellent linearity
PIN
• Extremely low noise
1
• Silicon nitride passivation
2, 3, 5, 6, 7
• Rugged construction
4
• Gold metallization ensures excellent reliability.
DESCRIPTION
input
common
10 V, 200 mA supply terminal
8
+VB
9
output
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
handbook, halfpage
1
2
3
4
5
6
7
8
9
Side view
MBK049
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
16.5
17.5
dB
Itot
total current consumption (DC)
VB = 24 V
−
450
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
DC supply voltage
−
26
V
Vi
RF input voltage
−
65
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2001 Nov 02
2
Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
BGD885
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
MIN.
16.5
MAX.
17.5
UNIT
Gp
power gain
f = 50 MHz
dB
SL
slope cable equivalent
f = 40 to 860 MHz
0.2
1.6
dB
FL
flatness of frequency response
f = 40 to 860 MHz
−
±0.5
dB
S11
input return losses
f = 40 MHz; note 1
20
−
dB
f = 800 to 860 MHz
10
−
dB
S22
output return losses
f = 40 MHz; note 1
20
−
dB
f = 800 to 860 MHz
10
−
dB
d2
second order distortion
note 2
−
−53
dB
Vo
output voltage
dim = −60 dB; note 3
64
−
dBmV
dim = −60 dB; note 4
63
−
dBmV
f = 50 MHz
−
8
dB
f = 550 MHz
−
8
dB
f = 650 MHz
−
8
dB
f = 750 MHz
−
8
dB
F
Itot
noise figure
total current consumption (DC)
f = 860 MHz
−
8
dB
note 5
−
450
mA
Notes
1. Decrease per octave of 1.5 dB.
2. Vp = 59 dBmV at fp = 349.25 MHz;
Vq = 59 dBmV at fq = 403.25 MHz;
measured at fp + fq = 752.5 MHz.
3. Measured according to DIN45004B:
fp = 341.25 MHz; Vp = Vo;
fq = 348.25 MHz; Vq = Vo −6 dB;
fr = 350.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 339.25 MHz.
4. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02
3
Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
BGD885
BGD885
1
2
3
4
5
6
7
8
9
input
output
10 V
C1
C2
VB = 24 V
MEA094-2
Fig.2 Test circuit.
List of components (see Fig.2)
COMPONENT
C1
DESCRIPTION
ceramic multilayer capacitor
VALUE
1 nF (max.)
C2
ceramic multilayer capacitor
1 nF
R
resistor
56 Ω, 2 W
2001 Nov 02
4
Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
BGD885
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads
SOT115D
D
E
Z
A2
1
2
3
4
5
6
7
8
9
A
L
F
S
W
c
e
d
U2
b
q2
e1
Q
w M
y M B
q1
B
y M B
y M B
P
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
Q
∅P
min.
max.
8.8
4.15
3.85
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
97-04-10
SOT115D
2001 Nov 02
2.4
q
5
Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
BGD885
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 02
6
Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
NOTES
2001 Nov 02
7
BGD885
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/07/pp8
Date of release: 2001
Nov 02
Document order number:
9397 750 09031