ONSEMI NDF08N60Z

NDF08N60Z, NDP08N60Z
N-Channel Power MOSFET
600 V, 0.95 W
Features
•
•
•
•
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
NDF08N60Z
NDP08N60Z
Drain−to−Source Voltage
VDSS
Continuous Drain Current
RqJC
ID
7.5 (Note 1)
7.5
A
Continuous Drain Current
RqJC TA = 100°C
ID
4.8 (Note 1)
4.8
A
Pulsed Drain Current,
VGS @ 10 V
IDM
30 (Note 1)
30
A
Power Dissipation
PD
35
139
W
Gate−to−Source Voltage
VGS
30
V
Single Pulse Avalanche
Energy, ID = 7.5 A
EAS
235
mJ
ESD (HBM)
(JESD 22−A114)
Vesd
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
VISO
Peak Diode Recovery
dv/dt
4.5
V/ns
Continuous Source
Current (Body Diode)
IS
7.5
A
Maximum Temperature for
Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
600
VDSS
RDS(ON) (MAX) @ 3.5 A
600 V
0.95 W
Unit
V
4500
N−Channel
D (2)
G (1)
S (3)
TO−220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
V
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ID v 7.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
NDF08N60ZG
or
NDP08N60ZG
AYWW
Gate
Source
TO−220
CASE 221A
STYLE 5
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
1
Publication Order Number:
NDF08N60Z/D
NDF08N60Z, NDP08N60Z
THERMAL RESISTANCE
Symbol
NDF08N60Z
NDP08N60Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
3.6
0.9
°C/W
Junction−to−Ambient Steady State (Note 3)
RqJA
50
50
3. Insertion mounted
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
125°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 3.5 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 100 mA
VGS(th)
VDS = 15 V, ID = 3.5 A
gFS
6.3
S
Ciss
1140
pF
Coss
129
Reverse Transfer Capacitance
Crss
30
Total Gate Charge
Qg
39
Qgs
7.5
Qgd
21
Plateau Voltage
VGP
6.2
V
Gate Resistance
Rg
1.6
W
td(on)
14
ns
tr
22
td(off)
36
tf
15
±10
mA
0.95
W
4.5
V
ON CHARACTERISTICS (Note 4)
Forward Transconductance
0.82
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Gate−to−Source Charge
VDD = 300 V, ID = 7.5 A,
VGS = 10 V
Gate−to−Drain (“Miller”) Charge
nC
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 7.5 A,
VGS = 10 V, RG = 5 W
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = 7.5 A, VGS = 0 V
VSD
VGS = 0 V, VDD = 30 V
IS = 7.5 A, di/dt = 100 A/ms
trr
320
ns
Qrr
2.2
mC
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF08N60Z, NDP08N60Z
20
20
18
18
16
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
VGS = 10 V
14
7.0 V
12
6.5 V
10
8
6
6.0 V
4
5.5 V
5.0 V
2
0
0
5
10
15
VDS = 25 V
16
14
12
10
8
6
4
TJ = −55°C
2
20
0
3
25
4
1.25
ID = 3.5 A
TJ = 25°C
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.25
2.25
ID = 3.5 A
VGS = 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
8
9
10
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0
1
2
3
4
5
6
7
8
9
10
125
150
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.50
7
VGS = 10 V
TJ = 25°C
1.20
Figure 3. On−Region versus Gate−to−Source
Voltage
2.75
6
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
1.15
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.20
TJ = 25°C
TJ = 150°C
150
TJ, JUNCTION TEMPERATURE (°C)
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
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3
NDF08N60Z, NDP08N60Z
TYPICAL CHARACTERISTICS
2750
100
TJ = 25°C
VGS = 0 V
f = 1 MHz
10
C, CAPACITANCE (pF)
IDSS, LEAKAGE (mA)
2500
TJ = 150°C
1
TJ = 125°C
Ciss
2250
Coss
2000
1750
Crss
1500
1250
1000
750
500
250
50 100 150 200 250 300 350 400 450 500 550 600
0
0.01
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
Figure 8. Capacitance Variation
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
350
QT
300
VDS
250
VGS
200
QGD
QGS
150
VDS = 300 V
ID = 7.5 A
TJ = 25°C
0
4
8
12
16
20
24
28
32
100
50
0
40
36
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.1
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
t, TIME (ns)
td(off)
100
tr
tf
td(on)
10
1
1
10
RG, GATE RESISTANCE (W)
IS, SOURCE CURRENT (A)
10.0
VDD = 300 V
ID = 7.5 A
VGS = 10 V
100
TJ = 150°C
1.0
25°C
125°C
−55°C
0.1
0.3
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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4
1.2
NDF08N60Z, NDP08N60Z
ID, DRAIN CURRENT (A)
100
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
10 ms
1 ms 100 ms 10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF08N60Z
10
R(t) (C/W)
DUTY CYCLE = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
RqJC = 3.6°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Order Number
Package
Shipping
NDF08N60ZG
TO−220FP
(Pb−Free)
50 Units / Rail
NDP08N60ZG
TO−220AB
(Pb−Free)
50 Units / Rail
(In Development)
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5
1E+03
NDF08N60Z, NDP08N60Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
U
1 2 3
H
K
Z
L
R
V
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NDF08N60Z/D