ONSEMI NTD6416AN

NTD6416AN
N-Channel Power MOSFET
100 V, 17 A, 81 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
17
A
Continuous Drain
Current
Steady
State
Power Dissipation
Steady
State
TC = 25°C
TC = 100°C
71
W
IDM
62
A
TJ, Tstg
−55 to
+175
°C
IS
17
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 17 A, L = 0.3 mH, RG = 25 W)
EAS
43
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
260
°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
RDS(on) MAX
ID MAX
(Note 1)
100 V
81 mW @ 10 V
17 A
N−Channel
D
G
THERMAL RESISTANCE RATINGS
Parameter
V(BR)DSS
11
PD
Pulsed Drain Current
TC = 25°C
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Symbol
Max
Unit
Junction−to−Case (Drain) Steady State
RqJC
2.1
°C/W
Junction−to−Ambient (Note 1)
RqJA
40
S
4
4
1 2
1
3
2
3
IPAK
CASE 369D
STYLE 2
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
4 Drain
YWW
64
16ANG
4 Drain
1
Gate
2
Drain
6416AN
Y
WW
G
YWW
64
16ANG
•
•
•
•
3
Source
1
Gate
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 0
1
Publication Order Number:
NTD6416AN/D
NTD6416AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
112
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
2.0
4.0
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 17 A
73
gFS
VDS = 5 V, ID = 10 A
12
S
620
pF
Forward Transconductance
7.7
V
Negative Threshold Temperature
Coefficient
mV/°C
81
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
50
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
110
nC
1.0
VGS = 10 V, VDS = 80 V, ID = 17 A
3.6
QGD
10
Plateau Voltage
VGP
5.8
V
Gate Resistance
RG
2.4
W
td(on)
9.2
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 80 V,
ID = 17 A, RG = 6.1 W
tf
22
24
20
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 17 A
TJ = 25°C
0.85
TJ = 125°C
0.7
56
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 17 A
QRR
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2
V
ns
41
15
135
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTD6416AN
TYPICAL CHARACTERISTICS
10 V
ID, DRAIN CURRENT (A)
TJ = 25°C
6.0 V
20
5.5 V
10
5.0 V
4
6
8
25
20
15
10
0
10
3
5
6
7
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.09
0.08
0.07
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 10 V
TJ = 175°C
0.20
TJ = 125°C
0.15
0.10
TJ = 25°C
0.05
TJ = −55°C
0.00
8
10
10000
IDSS, LEAKAGE (nA)
2
1.5
1
25
50
75
100
125
150
14
16
20
18
VGS = 0 V
ID = 17 A
VGS = 10 V
0
12
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
−25
8
0.25
Figure 3. On−Region versus Gate Voltage
0.5
−50
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.10
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 17 A
TJ = 25°C
2.5
TJ = 25°C
TJ = 125°C
Figure 1. On−Region Characteristics
0.11
0.06
30
5
4.5 V
2
VDS w 10 V
35
6.5 V
30
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
40
7.5 V
ID, DRAIN CURRENT (A)
40
100
TJ = 125°C
10
175
TJ = 150°C
1000
10
TJ, JUNCTION TEMPERATURE (°C)
20
30
40
50
60
70
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
90 100
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTD6416AN
TJ = 25°C
VGS = 0 V
1000
C, CAPACITANCE (pF)
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
800
Ciss
600
400
200
0
Coss
Crss
0
20
40
60
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
VDS
4
40
2
0
20
ID = 17 A
TJ = 25°C
0
IS, SOURCE CURRENT (A)
t, TIME (ns)
td(off)
tr
tf
1
60
5
10
15
Qg, TOTAL GATE CHARGE (nC)
0
20
20
100
1
Qgd
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
VDS = 80 V
ID = 17 A
VGS = 10 V
10
80
VGS
Qgs
6
Figure 7. Capacitance Variation
1000
100
QT
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
td(on)
10
RG, GATE RESISTANCE (W)
TJ = 25°C
VGS = 0 V
15
10
5
0
0.5
100
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1.0
Figure 10. Diode Forward Voltage versus
Current
1000
50
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
ID = 17 A
100
10 ms
100 ms
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
1 ms
10 ms
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD6416AN
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTD6416ANT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6416AN−1G
IPAK
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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5
NTD6416AN
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD6416AN
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD6416AN/D